Abstract: A method for manufacturing a semiconductor device includes: preparing a conductive structure that includes a plurality of conductive features, adjacent two of which are spaced apart from each other by a corresponding one of a plurality of recesses; conformally forming a dielectric capping layer on the conductive structure; forming a dielectric cover layer on the dielectric capping layer to fill the recesses; and removing a portion of the dielectric cover layer and a portion of the dielectric capping layer to expose the conductive features, so as to form a plurality of spacer features respectively filled in the recesses; wherein each of the dielectric capping layer and the dielectric cover layer is made of a dielectric material doped with metal oxide.

Abstract: The present disclosure provides a method for increasing production of an indigoid compound, including the following steps: (a) mutating a wild-type flavin-containing monooxygenase to a mutant flavin-containing monooxygenase expressed in Escherichia coli; and (b) culturing the Escherichia coli in a bacterial culture medium comprising tryptophan to allow the mutant FMO to interact with tryptophan for a predetermined time to convert the tryptophan into the indigoid compound. Compared to the wild-type flavin-containing monooxygenase, the mutant flavin-containing monooxygenase increases production of the indigoid compound. The present disclosure also provides a recombinant polypeptide for increasing production of the indigoid compound.

Abstract: A system and a method for determining an estimated survival time of a subject with a medical condition utilizes the novel RS-AFT model and is especially suitable and highly advantageous for survival analysis based on microarray gene expression data because of its exceptional performance of gene selection, stable noise resistance, and high prediction precision.