Abstract: The present disclosure provides a virtual scene presentation method, apparatus, device, and storage medium, the method comprising: identifying a physical object set in an environment space; determining a scene type corresponding to the environment space; obtaining a virtual scene set associated with the scene type; and presenting a virtual scene in the virtual scene set on at least part of physical objects in the physical object set.

Abstract: Gait, the walking pattern of individuals, is one of the important biometrics modalities. Most of the existing gait recognition methods take silhouettes or articulated body models as gait features. These methods suffer from degraded recognition performance when handling confounding variables, such as clothing, carrying and viewing angle. To remedy this issue, this disclosure proposes to explicitly disentangle appearance, canonical and pose features from RGB imagery. A long short-term memory integrates pose features over time as a dynamic gait feature while canonical features are averaged as a static gait feature. Both of them are utilized as classification features.

Abstract: A method for scheduling and displaying three-dimensional annotations is provided, relating to the field of realistic three-dimensional visualization technology. The present disclosure covers data services, data scheduling schemes, data storage schemes, annotation avoidance schemes, and annotation efficient display schemes. Users can use this disclosure to schedule and display massive three-dimensional annotations in WebGL at high frame rates while consuming extremely low performance. It solves the problem of text inversion and non-hierarchical zooming of three-dimensional maps in traditional annotation and slicing services which can cause text to appear larger or smaller, breaking through the technical bottleneck that traditional annotation and slicing services that cannot be superposition displayed on 3D models.

Abstract: The present disclosure provides a portable standby starting device for a vehicle. The portable standby starting device includes a battery circuit, a load access detecting circuit, and a vehicle starting circuit, wherein the battery circuit is coupled to the load access detecting circuit and the vehicle starting circuit, and is configured to supply power to the load access detecting circuit and the vehicle starting circuit; the load access detecting circuit is coupled to the vehicle starting circuit, and is configured to detect whether the vehicle starting circuit is connected to a vehicle load; the vehicle starting circuit is configured to, when the load access detecting circuit detects the connection of the vehicle load, output a vehicle starting current for controlling an ignition operation performed for the vehicle.

Abstract: A method and a device for the mutual monitoring and/or control of a multiplicity of autonomous technical systems which are at least partially interconnected to one another via a communication network is provided. At least one of the autonomous technical systems is embodied as a monitoring autonomous technical system and monitors the operating behaviour of other autonomous technical systems. Since a specified first rule, the monitoring autonomous technical system detects an operating behavior, which is contrary to the rule, of a first autonomous technical system and generates a status message about the operating behavior which is contrary to the rule therefrom. Depending on the evaluation, a control rule is derived for the first autonomous technical system and communicated to a control module which is assigned to the first autonomous technical system. The operating behavior of the first autonomous technical system is controlled on the basis of the control rule.

Abstract: A semiconductor device has a gate electrode including polysilicon, and a hydrogen occluding layer covering at least a top face of the gate electrode and having a function of occluding hydrogen.

Abstract: A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.

Abstract: A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.

Abstract: Tungsten silicide WSix is grown through reduction of WF6 with SiCl2H2, and the flow rate between WF6 and SiCl2H2 is controlled in such a manner that the composition ratio x ranges from 2.0 to 2.2 in an initial stage for forming cores on a doped polysilicon layer, and is treated with heat at 700 degrees to 850 degrees in centigrade so as to grow tungsten silicide grains with <001> orientation faster than tungsten silicide grains with <101> orientation; the tungsten silicide WSix is tightly adhered to the doped polysilicon, and the abnormal oxidation is restricted during the heat treatment.

Abstract: Tungsten silicide WSix is grown through reduction of WF6 with SiCl2H2, and the flow rate between WF6 and SiCl2H2 is controlled in such a manner that the composition ratio x ranges from 2.0 to 2.2 in an initial stage for forming cores on a doped polysilicon layer, and is treated with heat at 700 degrees to 850 degrees in centigrade so as to grow tungsten silicide grains with <001 > orientation faster than tungsten silicide grains with <101 > orientation; the tungsten silicide WSix is tightly adhered to the doped polysilicon, and the abnormal oxidation is restricted during the heat treatment.

Abstract: Tungsten silicide WSix is grown through reduction of WF6 with SiCl2H2, and the flow rate between WF6 and SiCl2H2 is controlled in such a manner that the composition ratio x ranges from 2.0 to 2.2 in an initial stage for forming cores on a doped polysilicon layer, and is treated with heat at 700 degrees to 850 degrees in centigrade so as to grow tungsten silicide grains with <001>orientation faster than tungsten silicide grains with <101>orientation; the tungsten silicide WSix is tightly adhered to the doped polysilicon, and the abnormal oxidation is restricted during the heat treatment.

Abstract: The atoms constituting a surface of a solid sample are identified by first forming, on the surface, island-like deposits of a substance capable of generating fluorescent X-rays upon being energized by an electron beam. The deposits are then energized with the electron beam so that fluorescent X-rays are emitted therefrom and reflected on the surface. From the critical angle for total reflection of the fluorescent X-rays reflected on that portion of the surface of the sample on which no deposits are present, the atoms constituting the surface may be determined. An apparatus for carrying out the above method is also disclosed which is a modification of the conventional RHEED/TRAXS device.