Abstract: A method for manufacturing an integrated circuit structure includes providing a semiconductor substrate and forming a gate dielectric layer over the semiconductor substrate. The gate dielectric layer is formed in a plurality of thicknesses in a plurality of devices regions over the semiconductor substrate. A second dielectric layer is formed over at least one of the devices regions. A third dielectric layer is formed over at least a portion of the second dielectric layer. Ion traps are then selectively implanted in portions of the second dielectric layer.