Abstract: A method of adjusting a clamping of a semiconductor element against a support structure on a wire bonding machine is provided. The method includes: (a) detecting an indicia of floating of the semiconductor element with respect to the support structure at a plurality of locations of the semiconductor element; and (b) adjusting the clamping of the semiconductor element against the support structure based on the results of step (a).

Abstract: A method of adjusting a clamping of a semiconductor element against a support structure on a wire bonding machine is provided. The method includes: (a) detecting an indicia of floating of the semiconductor element with respect to the support structure at a plurality of locations of the semiconductor element; and (b) adjusting the clamping of the semiconductor element against the support structure based on the results of step (a).

Abstract: A method of adjusting a clamping of a semiconductor element against a support structure on a wire bonding machine is provided. The method includes: (a) detecting an indicia of floating of the semiconductor element with respect to the support structure at a plurality of locations of the semiconductor element; and (b) adjusting the clamping of the semiconductor element against the support structure based on the results of step (a).

Abstract: A method of adjusting a clamping of a semiconductor element against a support structure on a wire bonding machine is provided. The method includes: (a) detecting an indicia of floating of the semiconductor element with respect to the support structure at a plurality of locations of the semiconductor element; and (b) adjusting the clamping of the semiconductor element against the support structure based on the results of step (a).

Abstract: A method of providing a z-axis force profile applied to a plurality of bonding locations during a wire bonding operation is provided. The method includes: (a) determining a z-axis force profile for each of a plurality of bonding locations on an unsupported portion of at least one reference semiconductor device; and (b) applying the z-axis force profile during subsequent bonding of a subject semiconductor device. Methods of: determining a maximum bond force applied to a bonding location during formation of a wire bond; and determining a z-axis constant velocity profile for formation of a wire bond, are also provided.

Abstract: A method of providing a z-axis force profile applied to a plurality of bonding locations during a wire bonding operation is provided. The method includes: (a) determining a z-axis force profile for each of a plurality of bonding locations on an unsupported portion of at least one reference semiconductor device; and (b) applying the z-axis force profile during subsequent bonding of a subject semiconductor device. Methods of: determining a maximum bond force applied to a bonding location during formation of a wire bond; and determining a z-axis constant velocity profile for formation of a wire bond, are also provided.

Abstract: A method of providing a z-axis force profile applied to a plurality of bonding locations during a wire bonding operation is provided. The method includes: (a) determining a z-axis force profile for each of a plurality of bonding locations on an unsupported portion of at least one reference semiconductor device; and (b) applying the z-axis force profile during subsequent bonding of a subject semiconductor device. Methods of: determining a maximum bond force applied to a bonding location during formation of a wire bond; and determining a z-axis constant velocity profile for formation of a wire bond, are also provided.

Abstract: A method of providing a z-axis force profile applied to a plurality of bonding locations during a wire bonding operation is provided. The method includes: (a) determining a z-axis force profile for each of a plurality of bonding locations on an unsupported portion of at least one reference semiconductor device; and (b) applying the z-axis force profile during subsequent bonding of a subject semiconductor device. Methods of: determining a maximum bond force applied to a bonding location during formation of a wire bond; and determining a z-axis constant velocity profile for formation of a wire bond, are also provided.

Abstract: A method of applying bonding energy to form a bond between a portion of a wire and a contact of a bonding location using a wire bonding machine is provided. The method includes: (1) moving a bonding tool towards the contact; (2) detecting when a portion of the contact (100a) is pressed against a device supporting surface (112) of the wire bonding machine; and (3) applying bonding energy to the portion of the contact such that a bond is formed between the contact and the portion of wire.

Abstract: A method of determining a trajectory of an arc motion of a wire used in the formation of a wire loop is provided. The arc motion is between a first point and a second point of the trajectory. The method includes: (1) defining a pivot point with respect to the first point and the second point; (2) determining a plurality of data points for generating the trajectory, each of the data points including a radius value and an angle value as a function of time, each of the angle values being between (a) a first angle defined by the pivot point and the first point, and (b) a second angle defined by the pivot point and the second point; and (3) converting the plurality of data points into trajectory data that may be used by a wire bonding machine.

Abstract: A method of applying bonding energy to form a bond between a portion of a wire and a contact of a bonding location using a wire bonding machine is provided. The method includes: (1) moving a bonding tool towards the contact; (2) detecting when a portion of the contact (100a) is pressed against a device supporting surface (112) of the wire bonding machine; and (3) applying bonding energy to the portion of the contact such that a bond is formed between the contact and the portion of wire.

Abstract: A method of determining a trajectory of an arc motion of a wire used in the formation of a wire loop is provided. The arc motion is between a first point and a second point of the trajectory. The method includes: (1) defining a pivot point with respect to the first point and the second point; (2) determining a plurality of data points for generating the trajectory, each of the data points including a radius value and an angle value as a function of time, each of the angle values being between (a) a first angle defined by the pivot point and the first point, and (b) a second angle defined by the pivot point and the second point; and (3) converting the plurality of data points into trajectory data that may be used by a wire bonding machine.