Abstract: The present disclosure discloses a semiconductor device and a fabrication method thereof. The semiconductor device includes a plurality of first gate structures and second gate structures extending in a first direction and arranged alternatively in a second direction. The first gate structure includes a first isolation structure. The second gate structure includes a second isolation structure. The first isolation structure and the second isolation structure adjacent to each other in the second direction are disposed oppositely, and the first isolation structure and the second isolation structure are both located on one end in the first direction. The present disclosure may improve the yield and the reliability.

Abstract: Methods for fabricating memory devices including capacitors are disclosed. In one aspect, a method of fabricating a memory device including capacitors is described, where each capacitor includes a first electrode and a second electrode separated by an isolation layer. The method includes providing a first wafer including a sacrificial material and the first electrodes disposed in first holes and in contact with the sacrificial material, hybrid bonding the first wafer with a second wafer including a complementary metal-oxide-semiconductor (CMOS) device, removing the sacrificial material to expose the first electrodes, depositing the isolation layer on the first electrodes, and forming the second electrodes on the isolation layer.

Abstract: A semiconductor structure and a fabrication method thereof, a memory and a memory system are provided. The method includes: forming a plurality of capacitor holes penetrating through a first stack layer comprising a first region and a second region where the capacitor holes are located; forming a first electrode layer on inner walls of the capacitor holes; forming a dielectric layer in the first region and the second region; forming a second electrode layer on a side of the dielectric layer; removing the second electrode layer on the first stack layer in the second region; and forming a contact structure penetrating through the first stack layer in the second region. The method can prevent an etch loading effect from occurring in the first region during formation of the capacitor holes, which is favorable to form capacitor structures with a uniform size, thus improving reliability of the capacitor structures.

Abstract: A semiconductor structure, a fabrication method thereof, a memory, and a memory system are provided. The method may include forming a plurality of capacitor holes extending through a stack of layers in the first region and the second region of the stack of layers. The method may include forming a first electrode layer over the inside walls of the respective capacitor holes. The method may include forming a dielectric layer over the stack of layers. The method may include removing at least part of the dielectric layer in the second region. The method may include forming a second electrode layer. The portion of the second electrode layer in the first region may be separated from the portion of the second electrode layer in the second region. In the second region, the first electrode layer may be connected with the second electrode layer.

Abstract: In certain aspects, a semiconductor device includes a vertical transistor, a metal bit line, and a pad layer. The vertical transistor includes a semiconductor body extending in a first direction, and a gate structure coupled to at least one side of the semiconductor body. The gate structure includes a gate dielectric and a gate electrode. The metal bit line extends in a second direction perpendicular to the first direction and coupled to a terminal of the vertical transistor via an ohmic contact. The pad layer is positioned between the gate electrode and the metal bit line in the first direction. The gate dielectric and the pad layer have different dielectric materials.

Abstract: A semiconductor device, a memory system, and a fabricating method are provided. The semiconductor device comprises a memory structure bonded with a circuit structure. The memory structure comprises: first transistors each comprising a semiconductor body extending in a vertical direction, a semiconductor layer on a lateral side of the first transistors, a first isolation structure extending through the semiconductor layer and laterally encircling a first portion of the semiconductor layer, a first contact structure extending through the first portion of the semiconductor layer, and a first contact pad above the first portion of the semiconductor layer and connected with the first contact structure. A lateral dimension of the first contact pad is less than a lateral dimension of the first portion of the semiconductor layer. The circuit structure comprises a second transistor, and the first contact pad is electrically connected to the second transistor by the first contact structure.

Abstract: A memory device includes an array of memory cells, bit lines coupled to the memory cells, first air gaps, and second air gaps. Each of the memory cells includes a vertical transistor. The vertical transistor includes a semiconductor body extending in a first direction. Each of the bit lines is connected to a first end of the semiconductor body. At least one of the first air gaps is between adjacent bit lines. At least one of the second air gaps is between adjacent semiconductor bodies of adjacent memory cells.

Abstract: A semiconductor device and methods for forming the same are provided. The method includes: forming a plurality of first trenches having a first width during forming a plurality of grooves having a second width less than the first width, each of the plurality of first trenches and the plurality of grooves extending laterally along a first lateral direction and vertically in an upper portion of a semiconductor layer, the plurality of first trenches and the plurality of grooves being alternatively arranged along a second lateral direction different from the first lateral direction; forming a spacer in each groove, where the spacer is laterally extending along the first lateral direction; and forming two disconnected conductive structures in each first trench, the disconnected conductive structures laterally extending in parallel along the first lateral direction.

Abstract: There are provided a wavelength selective switch device, a communication apparatus and a wavelength switching method. The wavelength selective switch device includes an incidence unit; an exit unit; a wavelength diversifying-synthesizing unit for diversifying and multiplexing the respective incident lights in a first axis direction; a light adjustment unit for making the lights of respective wavelengths be not diversified in the second axis direction; a liquid crystal beam deflection unit having a plurality of pixels divided into sub-regions, for deflecting the lights of the respective wavelengths by changing phase-shift characteristics of the pixels in the sub-regions; a reflection unit, disposed in parallel with the liquid crystal beam deflection unit; a deflection driving unit for driving electrodes of the pixels to generate required phase-shift characteristics.

Abstract: A wavelength selective switch and a wavelength selection method are provided. The wavelength selective switch comprises a plurality of input ports, via which a plurality of light beams are input respectively, each light beam including at least one optical signal of a predetermined wavelength; at least one output port; and a wavelength separation apparatus including a wavelength separation device and a micro-mirror group, the wavelength separation device being configured to separate at least one optical signal from a light beam input via a predetermined one of the plurality of input ports, and the micro-mirror group being configured to adjust a propagation direction of the at least one optical signal, so that the at least one optical signal is output via a predetermined one of the at least one output port.

Abstract: A wavelength selective switch and a wavelength selection method are provided. The wavelength selective switch comprises an input port, through which a light beam, including a plurality of optical signals having different wavelengths, is incident; a wavelength separation apparatus, including a Blue Phase Liquid Crystal (BPLC) device and configured to separate at least one optical signal from the light beam through the BPLC device; and at least one output port, configured to output the at least one optical signal separated by the wavelength separation apparatus respectively. With the wavelength selective switch and the wavelength selection method, a polarization-independent phase modulation can be realized without a depolarization device disposed in an optical path, which thereby simplifies an optical path, reduces an insertion loss, and lowers costs of the wavelength selective switch and even the entire optical communication system.

Abstract: A wavelength selective switch and a wavelength selection method are provided. The wavelength selective switch comprises a plurality of input ports, via which a plurality of light beams are input respectively, each light beam including at least one optical signal of a predetermined wavelength; at least one output port; and a wavelength separation apparatus including a wavelength separation device and a micro-mirror group, the wavelength separation device being configured to separate at least one optical signal from a light beam input via a predetermined one of the plurality of input ports, and the micro-mirror group being configured to adjust a propagation direction of the at least one optical signal, so that the at least one optical signal is output via a predetermined one of the at least one output port.

Abstract: There are provided a wavelength selective switch device, a communication apparatus and a wavelength switching method. The wavelength selective switch device includes an incidence unit; an exit unit; a wavelength diversifying-synthesizing unit for diversifying and multiplexing the respective incident lights in a first axis direction; a light adjustment unit for making the lights of respective wavelengths be not diversified in the second axis direction; a liquid crystal beam deflection unit having a plurality of pixels divided into sub-regions, for deflecting the lights of the respective wavelengths by changing phase-shift characteristics of the pixels in the sub-regions; a reflection unit, disposed in parallel with the liquid crystal beam deflection unit; a deflection driving unit for driving electrodes of the pixels to generate required phase-shift characteristics.

Abstract: A wavelength selective switch and a wavelength selection method are provided. The wavelength selective switch comprises an input port, through which a light beam, including a plurality of optical signals having different wavelengths, is incident; a wavelength separation apparatus, including a Blue Phase Liquid Crystal (BPLC) device and configured to separate at least one optical signal from the light beam through the BPLC device; and at least one output port, configured to output the at least one optical signal separated by the wavelength separation apparatus respectively. With the wavelength selective switch and the wavelength selection method, a polarization-independent phase modulation can be realized without a depolarization device disposed in an optical path, which thereby simplifies an optical path, reduces an insertion loss, and lowers costs of the wavelength selective switch and even the entire optical communication system.