Abstract: As disclosed herein, methods of forming a piezoelectric resonator device can include forming a first stack of piezoelectric layers having alternating opposing ferroelectric polarizations comprising the following operations: (a) depositing a first material, including metal and nitrogen atoms, on a surface to form a first piezoelectric layer having a first ferroelectric polarization, (b) forming a first layer including Al on the first piezoelectric layer, (c) depositing a second material including the metal and the nitrogen atoms on the first layer to form a second piezoelectric layer having the first ferroelectric polarization, (d) forming first poling electrodes electrically laterally spaced apart from one another on a surface of the second piezoelectric layer and (e) applying a voltage across the first poling electrodes to change the first ferroelectric polarization of the second piezoelectric layer to a second ferroelectric polarization that is opposite to the first ferroelectric polarization.

Abstract: Nonlinear on-chip optical devices using AlScN are described herein. In one aspect, an optical component having nonlinear characteristics can include a first substrate defining a refractive index; and a nonlinear layer, the nonlinear layer disposed on the first substrate, the nonlinear layer comprising an amount of scandium (Sc), and the nonlinear layer defining a refractive index that is higher than the refractive index of the first substrate.

Abstract: Nonlinear on-chip optical devices using AlScN are described herein. In one aspect, an optical component having nonlinear characteristics can include a first substrate defining a refractive index; and a nonlinear layer, the nonlinear layer disposed on the first substrate, the nonlinear layer comprising an amount of scandium (Sc), and the nonlinear layer defining a refractive index that is higher than the refractive index of the first substrate.