Patents by Inventor Zichen Yang

Zichen Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250040196
    Abstract: A fin field-effect transistor device with hybrid conduction mechanism, including a fin field-effect transistor, a second source region, and a second drain region; the fin field-effect transistor includes a substrate, a fin channel region, a first source region, and a first drain region; the height of the second source region is not lower than the height of the substrate between the first source region and the first drain region; the first source region, the first drain region and the second drain region are doped with first ions; the second source region is formed between the substrate and the first source region, the second drain region is formed between the substrate and the first drain region, the second source region is doped with second ions. This scheme can realize hybrid conduction of fin channel diffusion drift current and bottom channel band-to-band tunneling current, thus obtaining better ultra-steep switching characteristics.
    Type: Application
    Filed: December 30, 2022
    Publication date: January 30, 2025
    Applicants: FUDAN UNIVERSITY, SHANGHAI INTEGRATED CIRCUIT MANUFACTURING INNOVATION CENTER CO., LTD.
    Inventors: Chunlei WU, Yumin XU, Boqian SHEN, Fei ZHAO, Zichen YANG, Wei ZHANG, Min XU
  • Publication number: 20240429229
    Abstract: A gate-all-around transistor with hybrid conduction mechanism, including a GAA MOSFET, a second source region, and a second drain region. The GAA MOSFET includes a substrate, a first source region, and a first drain region. The first source region, the first drain region and the second drain region are doped with first ions, the second source region is doped with second ions. The second source region is formed between the substrate and the first source region, the second drain region is formed between the substrate and the first drain region. The height of the second source region and the second drain region are not less than the height of the substrate between the first source region and the first drain region. It can realize the hybrid conduction of the gate channel diffusion drift current and the bottom channel band tunneling current to obtain better ultra-steep switching characteristics.
    Type: Application
    Filed: December 30, 2022
    Publication date: December 26, 2024
    Applicants: FUDAN UNIVERSITY, SHANGHAI INTEGRATED CIRCUIT MANUFACTURING INNOVATION CENTER CO., LTD.
    Inventors: Chunlei WU, Yumin XU, Boqian SHEN, Fei ZHAO, Zichen YANG, Wei ZHANG, Min XU
  • Publication number: 20220119610
    Abstract: The present disclosure herein discloses a preparation method of a polyurethane-based nano-silver SERS substrate, belongs to the technical field of Raman spectrums, and aims to solve problems of complex preparation process, low sensitivity and the like of SERS substrates. The method uses solidified polyurethane as a skeleton, and the polyurethane adsorbs nano silver particles onto its surface due to a porous surface structure and adsorptivity, so an SERS substrate with crystal violet as a probe molecule and having a limit of detection as low as 10?10 M is obtained. The SERS substrate prepared by the method has a large surface area, adsorbs a large number of target molecules, and is easy to prepare, high in sensitivity, and conducive to qualitative and quantitative analysis of SERS.
    Type: Application
    Filed: December 29, 2021
    Publication date: April 21, 2022
    Inventors: Guoqing Chen, Lvming Chen, Chun Zhu, Chaoqun Ma, Lei Li, Jiao Gu, Zhuowei Zhu, Hui Gao, Yamin Wu, Zichen Yang, Tuo Zhu