Patents by Inventor Ziep Tran
Ziep Tran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230298840Abstract: An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.Type: ApplicationFiled: January 23, 2023Publication date: September 21, 2023Inventors: Kiyoshi Mori, Ziep Tran, Giang Trung Dao, Michael Edward Ramon
-
Patent number: 11562871Abstract: An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.Type: GrantFiled: December 28, 2020Date of Patent: January 24, 2023Assignee: INOSO, LLC.Inventors: Kiyoshi Mori, Ziep Tran, Giang Trung Dao, Michael Edward Ramon
-
Publication number: 20210193422Abstract: An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.Type: ApplicationFiled: December 28, 2020Publication date: June 24, 2021Inventors: Kiyoshi Mori, Ziep Tran, Giang Trung Dao, Michael Edward Ramon
-
Patent number: 10879025Abstract: An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.Type: GrantFiled: March 23, 2020Date of Patent: December 29, 2020Assignee: INOSO, LLCInventors: Kiyoshi Mori, Ziep Tran, Giang Trung Dao, Michael Edward Ramon
-
Publication number: 20200303148Abstract: An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.Type: ApplicationFiled: March 23, 2020Publication date: September 24, 2020Inventors: Kiyoshi Mori, Ziep Tran, Giang Trung Dao, Michael Edward Ramon
-
Patent number: 10600600Abstract: An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.Type: GrantFiled: October 16, 2017Date of Patent: March 24, 2020Assignee: INOSO, LLCInventors: Kiyoshi Mori, Ziep Tran, Giang Trung Dao, Michael Edward Ramon
-
Publication number: 20180122605Abstract: An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.Type: ApplicationFiled: October 16, 2017Publication date: May 3, 2018Inventors: Kiyoshi Mori, Ziep Tran, Giang Trung Dao, Michael Edward Ramon
-
Patent number: 9793080Abstract: An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.Type: GrantFiled: August 18, 2016Date of Patent: October 17, 2017Assignee: INOSO, LLCInventors: Kiyoshi Mori, Ziep Tran, Giang Trung Dao, Michael Edward Ramon
-
Publication number: 20170053764Abstract: An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.Type: ApplicationFiled: August 18, 2016Publication date: February 23, 2017Inventors: Kiyoshi Mori, Ziep Tran, Giang Trung Dao, Michael Edward Ramon
-
Patent number: 9202756Abstract: A method of forming a stacked low temperature transistor and related devices. At least some of the illustrative embodiments are methods comprising forming at least one integrated circuit device on a front surface of a bulk semiconductor substrate, and depositing an inter-layer dielectric on the at least one integrated circuit device. A semiconductor layer may then be deposited on the inter-layer dielectric. In some embodiments, a transistor is formed within the semiconductor layer. In some examples, the transistor includes a gate structure formed over the semiconductor layer as well as source/drain regions formed within the semiconductor layer disposed adjacent to and on either side of the gate structure. A metal layer may then be deposited over the transistor, after which an annealing process is performed to induce a reaction between the source/drain regions and the metal layer.Type: GrantFiled: July 21, 2015Date of Patent: December 1, 2015Assignee: INOSO, LLCInventors: Ziep Tran, Kiyoshi Mori, Giang Trung Dao, Michael Edward Ramon
-
Patent number: 9087689Abstract: A method of forming a stacked low temperature transistor and related devices. At least some of the illustrative embodiments are methods comprising forming at least one integrated circuit device on a front surface of a bulk semiconductor substrate, and depositing an inter-layer dielectric on the at least one integrated circuit device. A semiconductor layer may then be deposited on the inter-layer dielectric. In some embodiments, a transistor is formed within the semiconductor layer. In some examples, the transistor includes a gate structure formed over the semiconductor layer as well as source/drain regions formed within the semiconductor layer disposed adjacent to and on either side of the gate structure. A metal layer may then be deposited over the transistor, after which an annealing process is performed to induce a reaction between the source/drain regions and the metal layer.Type: GrantFiled: July 11, 2014Date of Patent: July 21, 2015Assignee: INOSO, LLCInventors: Ziep Tran, Kiyoshi Mori, Giang Trung Dao, Michael Edward Ramon
-
Patent number: 8916872Abstract: A method of forming a stacked low temperature diode and related devices. At least some of the illustrative embodiments are methods comprising forming a metal interconnect disposed within an inter-layer dielectric. The metal interconnect is electrically coupled to at least one underlying integrated circuit device. A barrier layer is deposited on the metal interconnect and the inter-layer dielectric. A semiconductor layer is deposited on the barrier layer. A metal layer is deposited on the semiconductor layer. The barrier layer, the semiconductor layer, and the metal layer are patterned. A low-temperature anneal is performed to induce a reaction between the patterned metal layer and the patterned semiconductor layer. The reaction forms a silicided layer within the patterned semiconductor layer. Moreover, the reaction forms a P-N junction diode.Type: GrantFiled: July 11, 2014Date of Patent: December 23, 2014Assignee: Inoso, LLCInventors: Ziep Tran, Kiyoshi Mori, Giang Trung Dao, Michael Edward Ramon
-
Patent number: 8786130Abstract: A method of forming an electromechanical power switch for controlling power to integrated circuit (IC) devices and related devices. At least some of the illustrative embodiments are methods comprising forming at least one IC device on a front surface of a semiconductor substrate. The at least one IC device includes at least one circuit block and at least one power switch circuit. A dielectric layer is deposited on the IC device, and first and second electromechanical power switches are formed on the dielectric layer. The first power switch gates a voltage to the circuit block and the second power switch gates the voltage to the IC device. The first power switch is actuated by the power switch circuit, and the voltage to the circuit block is switched off. Alternatively, the second power switch is actuated by the power switch circuit, and the voltage to the IC device is switched off.Type: GrantFiled: August 23, 2013Date of Patent: July 22, 2014Assignee: INOSO, LLCInventors: Kiyoshi Mori, Ziep Tran, Giang T. Dao, Michael E. Ramon
-
Patent number: 8044494Abstract: A first packaged integrated circuit (IC) includes a package substrate, at least one IC die attached to a first surface of the package substrate, a plurality of conductive members on the first surface at least partially surrounding the at least one IC die and electrically connected to the at least one IC die, an encapsulant over the first surface surrounding the at least one IC die and the plurality of conductive members, wherein at least a portion of each of the plurality of conductive members is exposed by the encapsulant. A second packaged IC may be stacked onto the first packaged IC. The second packaged IC includes at least one IC die and a plurality of conductive members, each conductive member of the plurality of conductive members of the second packaged IC is in contact with a corresponding conductive member of the plurality conductive members of the first packaged IC.Type: GrantFiled: September 25, 2009Date of Patent: October 25, 2011Assignee: Freescale Semiconductor, Inc.Inventors: Addi B. Mistry, Marc A. Mangrum, David T. Patten, Jesse Phou, Ziep Tran
-
Publication number: 20100013065Abstract: A first packaged integrated circuit (IC) includes a package substrate, at least one IC die attached to a first surface of the package substrate, a plurality of conductive members on the first surface at least partially surrounding the at least one IC die and electrically connected to the at least one IC die, an encapsulant over the first surface surrounding the at least one IC die and the plurality of conductive members, wherein at least a portion of each of the plurality of conductive members is exposed by the encapsulant. A second packaged IC may be stacked onto the first packaged IC. The second packaged IC includes at least one IC die and a plurality of conductive members, each conductive member of the plurality of conductive members of the second packaged IC is in contact with a corresponding conductive member of the plurality conductive members of the first packaged IC.Type: ApplicationFiled: September 25, 2009Publication date: January 21, 2010Applicant: Freescale Semiconductor, Inc.Inventors: Addi B. Mistry, Marc A. Mangrum, David T. Patten, Jesse Phou, Ziep Tran
-
Publication number: 20080108179Abstract: A first packaged integrated circuit (IC) includes a package substrate, at least one IC die attached to a first surface of the package substrate, a plurality of conductive members on the first surface at least partially surrounding the at least one IC die and electrically connected to the at least one IC die, an encapsulant over the first surface surrounding the at least one IC die and the plurality of conductive members, wherein at least a portion of each of the plurality of conductive members is exposed by the encapsulant. A second packaged IC may be stacked onto the first packaged IC. The second packaged IC includes at least one IC die and a plurality of conductive members, each conductive member of the plurality of conductive members of the second packaged IC is in contact with a corresponding conductive member of the plurality conductive members of the first packaged IC.Type: ApplicationFiled: January 3, 2008Publication date: May 8, 2008Applicant: Freescale Semiconductor, IncInventors: Addi Mistry, Marc Mangrum, David Patten, Jesse Phou, Ziep Tran
-
Publication number: 20070141751Abstract: A first packaged integrated circuit (IC) includes a package substrate, at least one IC die attached to a first surface of the package substrate, a plurality of conductive members on the first surface at least partially surrounding the at least one IC die and electrically connected to the at least one IC die, an encapsulant over the first surface surrounding the at least one IC die and the plurality of conductive members, wherein at least a portion of each of the plurality of conductive members is exposed by the encapsulant. A second packaged IC may be stacked onto the first packaged IC. The second packaged IC includes at least one IC die and a plurality of conductive members, each conductive member of the plurality of conductive members of the second packaged IC is in contact with a corresponding conductive member of the plurality conductive members of the first packaged IC.Type: ApplicationFiled: December 16, 2005Publication date: June 21, 2007Inventors: Addi Mistry, Marc Mangrum, David Patten, Jesse Phou, Ziep Tran