Abstract: A display device includes a double-sided display module. The double-sided display module includes first and second display modules arranged back to back and connectors. Each connector includes at least one first connection hole and at least one second connection hole. The first display module includes first connection portions. The second display module includes second connection portions; and positions of the connectors, the first connection portions and the second connection portions are in one-to-one correspondence; the first display module and the second display module are fixedly connected to the connectors through the first connection portions and the second connection portions; and each first connection portion is connected to a connector through one of a first connection hole and a second connection hole of the connector, and each second connection portion is connected to the connector through another of a first connection hole and a second connection hole of the connector.

Abstract: A display assembly includes a display device, a first clamping plate and a second clamping plate. The display apparatus has at least one display area, and the first clamping plate and the second clamping plate are disposed on two opposite sides of the display device in a thickness direction thereof. At least one of the first clamping plate and the second clamping plate is located on at least one light-emitting side of the display device, and in a clamping plate located on a light-emitting side of the display device, at least a partial region of a portion covering an active area of the display device is in a transparent state. The display device includes a double-sided display module including a first display module and a second display module that are arranged back to back and an encapsulation housing configured to fix the first display module and the second display module.

Abstract: A tandem photovoltaic device includes: a tunnel junction between an upper cell unit and a lower cell unit. The lower cell unit is a crystalline silicon cell. The tunnel junction includes: a carrier transport layer, a crystalline silicon layer, and an intermediate layer located between the carrier transport layer and the crystalline silicon layer. The carrier transport layer is a metal oxide layer. The intermediate layer includes a tunneling layer. The crystalline silicon layer has a doping concentration greater than or equal to 1017 cm?3. The carrier transport layer is in direct contact with a shadow surface of the upper cell unit. If the crystalline silicon layer is a p-type crystalline silicon layer, a first energy level is close to a second energy level. If the crystalline silicon layer is an n-type crystalline silicon layer, a third energy level is close to a fourth energy level.

Abstract: The present disclosure relates to the field of photovoltaic technologies. Disclosed are a solar cell and a photovoltaic module. The solar cell includes: an absorption layer; and an energy selective contact layer located on a surface of the absorption layer, the energy selective contact layer having selectivity for electron energy or hole energy, and the material of the energy selective contact layer including a low-dimensional perovskite material. According to the solar cell and the photovoltaic module provided by the present disclosure, a photovoltaic module can be manufactured.

Abstract: At least one surface of a cell body of a photovoltaic cell includes a first area and a second area; the first area is configured as a textured structure; the second area is configured as a plurality of pits having a projection size of 0.5 to 100 microns on the surface of the cell body.

Abstract: Provided is a tandem photovoltaic device comprising: a top cell, a bottom cell, and a first light-trapping structure, in stacking, wherein a band-gap width of the top cell is larger than that of the bottom cell; and at least one of a second light-trapping structure located on a side of a shading surface of the bottom cell and a third light-trapping structure located on a side of a phototropic surface of the top cell; the three light-trapping structures are selected from metal or semiconductor material, and localized surface plasmons generated by the three light-trapping structures correspond to different peaks of light-wave response; and the three light-trapping structures form microstructures on a first cross section, average sizes d1, d2 and d3 of projections of the microstructures and average distances w1, w2 and w3 between the microstructures have relationships: 2 ? ( w ? 1 w ? 2 ) 2 · d ? 2 d ? 1 ? 16 , and / or ? 2 ? ( w ? 3 w ? 1 ) 2 · d ? 1 d ? 3 ? 16.

Abstract: The present application discloses a perovskite layer, a method for preparing a perovskite layer, a perovskite-layer solar cell and a perovskite-layer-solar-cell assembly, which relates to the technical field of photovoltaics, and is used to prepare a perovskite layer that can completely cover the substrate and has few defects. The method for preparing a perovskite layer includes: providing a substrate; forming perovskite seed crystals on the substrate; soaking the perovskite seed crystals into a perovskite solution; by the effect of the perovskite seed crystals, the perovskite seed crystals growing into a perovskite thin film; and performing annealing treatment to the perovskite thin film, to form the perovskite layer. The perovskite layer and the preparing method thereof according to the present application are used for the fabrication of a solar cell.

Abstract: A solar cell, a preparation method for a solar cell, and a photovoltaic module, relating to the technical field of solar energy photovoltaics. The solar cell includes a crystalline silicon cell unit, and a down-conversion luminescence layer and a perovskite layer sequentially located on the light-facing surface of the crystalline silicon cell unit. The band gap of the perovskite layer becomes gradually smaller in the direction from the light-facing surface to the back surface. The band gap at the back surface of the perovskite layer is greater than or equal to the band gap of an absorption layer of the crystalline silicon cell unit. Because the band gap gradually decreases from large to small, the perovskite layer features a wide absorption spectrum, a long charge carrier free path, higher luminous efficiency, thus being able to broaden the spectral absorption range of the solar cell, and improve energy use and conversion efficiency.

Abstract: The laminated A tandem solar cell includes a bottom cell and a top cell located on the bottom cell, wherein the bottom cell includes a first doping portion and a second doping portion, the first doping portion and the second doping portion form at least one PN junction, majority carriers in the first doping portion are a first type of carrier, and majority carriers in the second doping portion are a second type of carrier; the bottom cell is provided with a first electrode hole and a second electrode hole which penetrate the bottom cell, a first electrode is formed in the first electrode hole, and a second electrode is formed in the second electrode hole; the first electrode is in contact with the first doping portion; and the second electrode is in contact with the second doping portion.

Abstract: An air conditioner includes an indoor unit, an outdoor unit, and a refrigerant pipe connecting the indoor unit and the outdoor unit to form a refrigerant circuit. The refrigerant pipe includes a flexible structure.

Abstract: A back-contacting solar cell includes: a silicon substrate (1), wherein a shadow face of the silicon substrate (1) is delimited into a first region and a second region (2), and the second region (2) is doped to form a second-charge-carrier collecting end; a metal-chalcogen-compound layer (4), wherein the metal-chalcogen-compound layer (4) is deposited within at least the first region of the silicon substrate (1), and a region of the metal-chalcogen-compound layer (4) that corresponds to the first region forms a first-charge-carrier collecting end; a first electrode (5), wherein the first electrode (5) is correspondingly provided on the first-charge-carrier collecting end; and a second electrode (6), wherein the second electrode (6) is correspondingly provided within a region that corresponds to the second region (2). The collection and transferring of the first charge carrier are realized by using the first-charge-carrier collecting end.

Abstract: A tandem photovoltaic device includes: a tunnel junction between an upper cell unit and a lower cell unit. The lower cell unit is a crystalline silicon cell. The tunnel junction includes: a carrier transport layer, a crystalline silicon layer, and an intermediate layer located between the carrier transport layer and the crystalline silicon layer. The carrier transport layer is a metal oxide layer. The intermediate layer includes a tunneling layer. The crystalline silicon layer has a doping concentration greater than or equal to 1017 cm?3. The carrier transport layer is in direct contact with a shadow surface of the upper cell unit. If the crystalline silicon layer is a p-type crystalline silicon layer, a first energy level is close to a second energy level. If the crystalline silicon layer is an n-type crystalline silicon layer, a third energy level is close to a fourth energy level.

Abstract: A tandem photovoltaic device and production method. The tandem photovoltaic device includes: an upper battery cell and a lower battery cell, and a tunnel junction located between the upper battery cell and the battery cell; the lower battery is a crystalline silicon cell; the tunnel junction includes: an upper crystalline silicon layer, a lower crystalline silicon layer and an intermediate layer located between the upper crystalline silicon layer and the lower crystalline silicon layer; the upper crystalline silicon layer, the lower crystalline silicon layer and the intermediate layer are in direct contact, and the doping types of the upper crystalline silicon layer and the lower crystalline silicon layer are opposite; the doping concentration of the upper crystalline silicon layer at the interface with the intermediate layer and the doping concentration of the lower crystalline silicon layer at the interface with the intermediate layer are greater than or equal to 1018 cm?3.

Abstract: An intermediate series-connecting layer, a laminated photovoltaic device and a fabricating method are provided. The intermediate series-connecting layer is light-transmittable; the intermediate series-connecting layer includes a longitudinal conducting layer; and the longitudinal conducting layer is formed by nano-sized conducting columns that longitudinally grow; or the longitudinal conducting layer includes nano-sized conducting units that are separately distributed, and insulating and separating bodies located between neighboring the nano-sized conducting units, and the insulating and separating bodies transversely insulate the nano-sized conducting units. A large quantity of grain boundaries or interfaces are located between the nano-sized conducting columns, and have a poor transverse conducting performance, the longitudinal conducting layer has a poor transverse conducting capacity, the charge carriers are mainly longitudinally transmitted, and there is substantially no transverse current.

Abstract: A tandem photovoltaic device includes: an upper cell unit, a lower cell unit and a tunnel junction positioned between the upper cell unit and the lower cell unit; the tunnel junction includes an upper transport layer, a lower transport layer, and an intermediate layer positioned between the upper transport layer and the lower transport layer, the intermediate layer is an ordered defect layer, or, the intermediate layer is a continuous thin layer, or, the intermediate layer includes a first layer in contact with the lower transport layer and a second layer in contact with the upper transport layer; a doping concentration of the first layer is 10-10,000 times of a doping concentration of the lower transport layer, and the doping concentration of the first layer is less than 1021cm?3; a doping concentration of the second layer is 10-10,000 times of a doping concentration of the upper transport layer.

Abstract: Optimization of existing neural networks and optimization of newly defined neural networks is provided. The system starts from an existing neural network with a known state or from a set of desired characteristics for a newly defined neural network and creates a first generation of candidate neural networks with random variations of architectural structures and hyperparameters. Fitness functions are established to evaluate the candidate neural networks. Each candidate neural network is trained and operated and then evaluated using the fitness functions. Top performing architectural structures and hyperparameters are identified and used to create a second generation of candidate neural networks that trained, operated and evaluated. The process iteratively continues until an optimized candidate neural network is determined.

Abstract: The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions, such as for semiconductor substrates, comprising an abrasive of one or more dispersions of elongated, bent or nodular colloidal silica particles which contain a cationic nitrogen atom, and one or more amine carboxylic acids having an isoelectric point (pI) below 5, preferably, acidic amine carboxylic acids or pyridine acids, wherein the compositions have a pH of from 2 to 5. The compositions enable polishing at a high oxide:nitride removal rate ratio.

Abstract: The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions, such as for semiconductor substrates, comprising an abrasive of one or more dispersions of elongated, bent or nodular colloidal silica particles which contain a cationic nitrogen atom, and one or more amine carboxylic acids having an isoelectric point (pI) below 5, preferably, acidic amine carboxylic acids or pyridine acids, wherein the compositions have a pH of from 2 to 5. The compositions enable polishing at a high oxide:nitride removal rate ratio.