Patents by Inventor Zih-Han Chen

Zih-Han Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Insulated gate bipolar transistor structure and manufacturing method thereof
    Patent number: 11316036
    Abstract: An insulated gate bipolar transistor (IGBT) structure including a substrate and a first gated PNPN diode is provided. The first gated PNPN diode is located on the substrate. The first gated PNPN diode includes a first gate, a first source/drain extension (SDE) region, and a second SDE region. The first gate is located on the substrate. The first SDE region and the second SDE region are located in the substrate on two sides of the first gate.
    Type: Grant
    Filed: August 24, 2020
    Date of Patent: April 26, 2022
    Assignee: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Chun-Sheng Chen, Yen-Cheng Fang, Zih-Han Chen
  • INSULATED GATE BIPOLAR TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20210391451
    Abstract: An insulated gate bipolar transistor (IGBT) structure including a substrate and a first gated PNPN diode is provided. The first gated PNPN diode is located on the substrate. The first gated PNPN diode includes a first gate, a first source/drain extension (SDE) region, and a second SDE region. The first gate is located on the substrate. The first SDE region and the second SDE region are located in the substrate on two sides of the first gate.
    Type: Application
    Filed: August 24, 2020
    Publication date: December 16, 2021
    Applicant: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Chun-Sheng Chen, Yen-Cheng Fang, Zih-Han Chen