Patents by Inventor Zih-Han Chen

Zih-Han Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR TREATING LIVER CIRRHOSIS BY USING COMPOSITION COMPRISING MESENCHYMAL STEM CELL, EXTRACELLULAR VESICLE PRODUCED BY MESENCHYMAL STEM CELL, AND GROWTH FACTOR
    Publication number: 20240115616
    Abstract: The present disclosure provides a method for treating liver cirrhosis by using a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors. The composition of the present disclosure achieves the effect of treating liver cirrhosis through various efficacy experiments.
    Type: Application
    Filed: October 4, 2023
    Publication date: April 11, 2024
    Inventors: Po-Cheng Lin, Pi-Chun Huang, Zih-Han Hong, Ming-Hsi Chuang, Yi-Chun Lin, Chia-Hsin Lee, Chun-Hung Chen, Chao-Liang Chang, Kai-Ling Zhang
  • LASER MACHINING DEVICE AND METHOD THEREOF
    Publication number: 20240066635
    Abstract: A laser machining device includes a pulsed laser generator, an accommodation chamber, a bandwidth broadening unit and a pulse compression unit. The pulsed laser generator is configured to emit a pulsed laser. The accommodation chamber has a gas inlet. The bandwidth broadening unit is disposed in the accommodation chamber, and is configured to broaden a frequency bandwidth of the pulsed laser to obtain a broad bandwidth pulsed laser. The pulse compression unit is disposed in the accommodation chamber. The bandwidth broadening unit and the pulse compression unit are arranged in order along a laser propagation path, and the pulse compression unit is configured to compress a pulse duration of the broad bandwidth pulsed laser.
    Type: Application
    Filed: October 5, 2022
    Publication date: February 29, 2024
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yi-Chi LEE, Bo-Han CHEN, Chih-Hsuan LU, Ping-Han WU, Zih-Yi LI, Shang-Yu HSU
  • Insulated gate bipolar transistor structure and manufacturing method thereof
    Patent number: 11316036
    Abstract: An insulated gate bipolar transistor (IGBT) structure including a substrate and a first gated PNPN diode is provided. The first gated PNPN diode is located on the substrate. The first gated PNPN diode includes a first gate, a first source/drain extension (SDE) region, and a second SDE region. The first gate is located on the substrate. The first SDE region and the second SDE region are located in the substrate on two sides of the first gate.
    Type: Grant
    Filed: August 24, 2020
    Date of Patent: April 26, 2022
    Assignee: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Chun-Sheng Chen, Yen-Cheng Fang, Zih-Han Chen
  • INSULATED GATE BIPOLAR TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20210391451
    Abstract: An insulated gate bipolar transistor (IGBT) structure including a substrate and a first gated PNPN diode is provided. The first gated PNPN diode is located on the substrate. The first gated PNPN diode includes a first gate, a first source/drain extension (SDE) region, and a second SDE region. The first gate is located on the substrate. The first SDE region and the second SDE region are located in the substrate on two sides of the first gate.
    Type: Application
    Filed: August 24, 2020
    Publication date: December 16, 2021
    Applicant: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Chun-Sheng Chen, Yen-Cheng Fang, Zih-Han Chen