Patents by Inventor Zih-I CHUANG

Zih-I CHUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PHOTOSENSITIVE RESIN LAMINATE AND APPLICATION THEREOF
    Publication number: 20250076763
    Abstract: A photosensitive resin laminate and application thereof are provided. The photosensitive resin laminate consists of two or more photosensitive resin layers and includes a second component, wherein: when the photosensitive resin laminate is characterized by gas chromatography with added toluene as an internal standard, an elution peak of the second component is at a retention time ranging from 0.55 min to 1.30 min, an elution peak of the added toluene is at a retention time ranging from 1.32 min to 1.65 min, and the following formula is satisfied: Area ? of ? the ? elution ? peak of ? the ? second ? component Area ? of ? the ? elution ? peak of ? the ? added ? toluene × Amount ? of ? the added ? toluene Mass ? of ? the ? photosensitive ? resin ? laminate × 100 ? % = 0.1 % - 7.
    Type: Application
    Filed: February 28, 2024
    Publication date: March 6, 2025
    Inventors: ZIH-I CHUANG, YUN-JUNG WU, E-MING HO
  • PHOTORESIST FILM AND APPLICATION THEREOF
    Publication number: 20240069440
    Abstract: A photoresist film and application thereof are provided. The photoresist film has a thickness T with a unit of ?m, and when the photoresist film is characterized by ultraviolet-visible spectroscopy, the photoresist film has an absorbance A405nm at 405 nm and an absorbance A436nm at 436 nm, wherein 0<A405nm/T?0.006 and 0<A436nm/T?0.005, and the thickness T is 60 ?m to 600 ?m.
    Type: Application
    Filed: August 7, 2023
    Publication date: February 29, 2024
    Inventors: Zih-I CHUANG, Yun-Jung WU, E-Ming HO
  • Mechanisms for forming semiconductor device having isolation structure
    Patent number: 9786542
    Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate having an upper surface. The semiconductor device also includes a recess extending from the upper surface into the semiconductor substrate. The semiconductor device further includes an isolation structure in the recess, and the isolation structure has an upper portion and a lower portion.
    Type: Grant
    Filed: January 13, 2014
    Date of Patent: October 10, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Zih-I Chuang, Chun-Ta Wu, Chia-Lun Chang
  • MECHANISMS FOR FORMING SEMICONDUCTOR DEVICE HAVING ISOLATION STRUCTURE
    Publication number: 20150200127
    Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate having an upper surface. The semiconductor device also includes a recess extending from the upper surface into the semiconductor substrate. The semiconductor device further includes an isolation structure in the recess, and the isolation structure has an upper portion and a lower portion.
    Type: Application
    Filed: January 13, 2014
    Publication date: July 16, 2015
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Zih-I CHUANG, Chun-Ta WU, Chia-LUN CHANG