Patents by Inventor Zijan Ray Li

Zijan Ray Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • III-nitride transistor with engineered substrate
    Patent number: 9773884
    Abstract: A transistor includes a buffer layer, a channel layer over the buffer layer, a barrier layer over the channel layer, a source electrode electrically connected to the channel layer, a drain electrode electrically connected to the channel layer, a gate electrode on the barrier layer between the source electrode and the drain electrode, a backside metal layer, a substrate between a first portion of the buffer layer and the backside metal layer; and a dielectric between a second portion of the buffer layer and the backside metal layer.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: September 26, 2017
    Assignee: HRL Laboratories, LLC
    Inventors: Rongming Chu, Zijan Ray Li, Karim Boutros
  • III-NITRIDE TRANSISTOR WITH ENGINEERED SUBSTRATE
    Publication number: 20140264361
    Abstract: A transistor includes a buffer layer, a channel layer over the buffer layer, a barrier layer over the channel layer, a source electrode electrically connected to the channel layer, a drain electrode electrically connected to the channel layer, a gate electrode on the barrier layer between the source electrode and the drain electrode, a backside metal layer, a substrate between a first portion of the buffer layer and the backside metal layer; and a dielectric between a second portion of the buffer layer and the backside metal layer.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Inventors: Rongming Chu, Zijan Ray Li, Karim Boutros