Abstract: A method for manufacturing a substrate is disclosed. The method comprises the following steps: step one, depositing an amorphous silicon layer on a base material; step two, depositing a silicon dioxide layer with a first thickness on the amorphous silicon layer; and step three, etching the silicon dioxide layer until a thickness thereof is reduced to a second thickness. According to the method of the present disclosure, the silicon dioxide layer with a needed thickness can be manufactured on the amorphous silicon layer. When the ELA procedure is performed, the silicon dioxide layer has an enough thickness to prevent the formation of protrusions at grain boundary of polysilicon, so that the semi-conductive layer manufactured therein can have a relatively low roughness.

Abstract: Provided is a cleaning device, comprising a plurality of cleaning units, and a conveyor which is used for connecting the plurality of cleaning units. Each of the plurality of cleaning units includes a body having a working chamber, and a liquid spray unit. At least one of the plurality of cleaning units comprises a plurality of baffles arranged between the liquid spray unit and the conveyor, and a driving mechanism. The driving mechanism is configured to actuate each of the plurality of baffles into rotation along a first direction to overlap with adjacent baffles, and further actuate each of the plurality of baffles into rotation along an opposite direction of the first direction.

Abstract: The present disclosure relates to an array substrate and the manufacturing method thereof. The manufacturing method includes depositing a conductive layer on a substrate, forming three poles of at least one thin film transistor (TFT), a first signal line, and a second signal line by etching the conductive layer via a first mask, The method also includes depositing an intermediate layer in sequence, forming a first connecting bridge connecting a first portion and a second portion by etching the intermediate layer via a second mask, depositing a conductive electrode, and forming at least one pixel electrode and a connecting line between the first portion and the second portion by etching the conductive electrode via a third mask. In this way, the time of the manufacturing process of the array substrates may be reduced such that the manufacturing cost may be decreased.

Abstract: A method for manufacturing a substrate is disclosed. The method comprises the following steps: step one, depositing an amorphous silicon layer on a base material; step two, depositing a silicon dioxide layer with a first thickness on the amorphous silicon layer; and step three, etching the silicon dioxide layer until a thickness thereof is reduced to a second thickness. According to the method of the present disclosure, the silicon dioxide layer with a needed thickness can be manufactured on the amorphous silicon layer. When the ELA procedure is performed, the silicon dioxide layer has an enough thickness to prevent the formation of protrusions at grain boundary of polysilicon, so that the semi-conductive layer manufactured therein can have a relatively low roughness.

Abstract: The present disclosure relates to an array substrate and the manufacturing method thereof. The manufacturing method includes depositing a conductive layer on a substrate, forming three poles of at least one thin film transistor (TFT), a first signal line, and a second signal line by etching the conductive layer via a first mask, The method also includes depositing an intermediate layer in sequence, forming a first connecting bridge connecting a first portion and a second portion by etching the intermediate layer via a second mask, depositing a conductive electrode, and forming at least one pixel electrode and a connecting line between the first portion and the second portion by etching the conductive electrode via a third mask. In this way, the time of the manufacturing process of the array substrates may be reduced such that the manufacturing cost may be decreased.

Abstract: A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.

Abstract: The present disclosure relates to a LTPS TFT unit for liquid crystal modules and the manufacturing method thereof. The manufacturing method includes: forming a SiNx layer on a glass substrate; forming a SiOx layer and an a-Si layer on the SiNx layer in sequence; scanning the a-Si layer by laser beams to remove hydrogen within the a-Si layer; adopting excimer laser to re-crystallization anneal the a-Si layer to form the polysilicon layer; forming a gate insulation layer on the polysilicon layer; forming a gate on the gate insulation layer; and forming a drain insulation layer on the gate.

Abstract: The present disclosure relates to a LTPS TFT unit for liquid crystal modules and the manufacturing method thereof. The manufacturing method includes: forming a SiNx layer on a glass substrate; forming a SiOx layer and an a-Si layer on the SiNx layer in sequence; scanning the a-Si layer by laser beams to remove hydrogen within the a-Si layer; adopting excimer laser to re-crystalization anneal the a-Si layer to form the polysilicon layer; forming a gate insulation layer on the polysilicon layer; forming a gate on the gate insulation layer; and forming a drain insulation layer on the gate.

Abstract: Provided is a cleaning device, comprising a plurality of cleaning units, and a conveyor which is used for connecting the plurality of cleaning units. Each of the plurality of cleaning units includes a body having a working chamber, and a liquid spray unit. At least one of the plurality of cleaning units comprises a plurality of baffles arranged between the liquid spray unit and the conveyor, and a driving mechanism. The driving mechanism is configured to actuate each of the plurality of baffles into rotation along a first direction to overlap with adjacent baffles, and further actuate each of the plurality of baffles into rotation along an opposite direction of the first direction.

Abstract: A liquid crystal panel substrate and manufacturing method thereof are provided. The substrate comprising a glass substrate, a light shielding layer arranged on the glass substrate, and an active layer arranged on the light shielding layer. Interference from unnecessary light source can be significantly decreased through the above structure of the liquid crystal panel substrate, so that the defect of photo-generated leakage current of the substrate can be alleviated, whereby the basic performance of the liquid crystal panel substrate can be guaranteed, and the problems of flickers and crosstalk of the pictures happened to the liquid crystal display can be eliminated.

Abstract: A laser crystallization system and a method of controlling crystallization energy therein are disclosed. The laser crystallization system comprises: a Mura monitor device, used for monitoring the real-time Mura status during the crystallization process; a host station, connected with the Mura monitor device, used for determining the real-time level of the real-time Mura status acquiring from the Mura monitoring device, and generating crystallization energy control order based on the real time level; a crystallization device, connected with the host station, for carrying out the crystallization energy control order generated from the host station to control the outputting crystallization energy. The Mura monitoring device is used to monitor the Mura status online in real-time, and the crystallization energy outputted by the crystallization device is controlled according to the real-time Mura status.