Patents by Inventor Zilan Shen

Zilan Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6348906
    Abstract: A row-select circuit for an organic light emitting diode display propagates a gating pulse through a shift register. This gating pulse is synchronized with a system clock signal and is used to selectively apply a plurality of broadcast control signals to a selected row of pixels on the display. The line scanning circuitry is controlled to clear and autozero the pixels in the display either one line at a time or the entire image frame at a time. According to another aspect of the invention, the clearing of a row of pixels in the display is performed over several line intervals before the row is autozeroed and loaded with new values. According to yet another aspect of the invention, the broadcast control signals may be adapted to achieve the best performance for each display device.
    Type: Grant
    Filed: August 26, 1999
    Date of Patent: February 19, 2002
    Assignee: Sarnoff Corporation
    Inventors: Robin Mark Adrian Dawson, Zilan Shen, Alfred Charles Ipri, Roger Green Stewart, James Harold Atherton, Stephen John Connor
  • Patent number: 6307322
    Abstract: A circuit design technique polysilicon thin-film transistor (TFT) circuitry produces circuits that are relatively less sensitive to threshold variations among the TFT's than circuits designed using conventional techniques. The circuit is designed such that thin-film transistors that are sensitive to threshold variations are made larger than other thin-film transistors in the circuitry to minimize threshold variations among similar transistors implemented in the circuit. In one embodiment, a pixel structure for an active matrix display device implemented in polysilicon includes two transistors, a select transistor and a drive transistor. The drive transistor in the pixel structure is a thin film metal oxide silicon (MOS) transistor that includes a gate to source capacitance sufficient to hold an electrical potential which keeps the transistor in a conducting state for an image field interval. One embodiment of the pixel structure includes only the select transistor and the drive transistor.
    Type: Grant
    Filed: December 28, 1999
    Date of Patent: October 23, 2001
    Assignee: Sarnoff Corporation
    Inventors: Robin Mark Adrian Dawson, Zilan Shen, Alfred Charles Ipri, Roger Green Stewart, Michael Gillis Kane
  • Patent number: 6274978
    Abstract: A display as for images and/or information comprises a plurality of light-emitting fibers disposed in side-by-side arrangement to define a viewing surface. Each light-emitting fiber includes a plurality of light-emitting elements disposed along its length, each having two electrodes between which are applied electrical signals to cause the light-emitting element to emit light to display a pixel or sub-pixel of the image and/or information. The light-emitting fiber includes an electrical conductor disposed along its length to serve as a first electrode, a layer of light-emissive material disposed thereon, and a plurality of electrical contacts disposed on the light-emissive material to serve as the second electrodes of the light-emitting elements.
    Type: Grant
    Filed: October 15, 1999
    Date of Patent: August 14, 2001
    Assignee: Sarnoff Corporation
    Inventors: William Ronald Roach, Bawa Singh, Satyam Choudary Cherukuri, Zilan Shen
  • Patent number: 6259846
    Abstract: A display as for images and/or information comprises a plurality of light-emitting fibers disposed in side-by-side arrangement to define a viewing surface. Each light-emitting fiber includes a plurality of light-emitting elements disposed along its length, each having two electrodes between which are applied electrical signals to cause the light-emitting element to emit light to display a pixel or sub-pixel of the image and/or information. The light-emitting fiber includes an electrical conductor disposed along its length to serve as a first electrode, a layer of light-emissive material disposed thereon, and a plurality of electrical contacts disposed on the light-emissive material to serve as the second electrodes of the light-emitting elements.
    Type: Grant
    Filed: October 15, 1999
    Date of Patent: July 10, 2001
    Assignee: Sarnoff Corporation
    Inventors: William Ronald Roach, Bawa Singh, William Chiang, Zilan Shen, Vipulkumar K. Patel
  • Patent number: 6232714
    Abstract: Optical cavities in a stacked organic light emitting device (SOLEDs) can shift or attenuate the light emitted by the individual organic light emitting devices (OLEDs) in the stack. Interference caused by reflections within the stack, absorption, positioning of the light source, and the polarization of the emitted light can all determine how the spectra of the emitted light are affected by the SOLED structure. A detailed model that provides a good fit to measured SOLED emissions can be used to predict how a SOLED will affect light emitted by OLEDs. As a result, SOLED geometries that will optimize color saturation and external quantum efficiency can be predicted.
    Type: Grant
    Filed: April 14, 1999
    Date of Patent: May 15, 2001
    Assignee: The Trustees of Princeton University
    Inventors: Zilan Shen, Stephen R. Forrest, Paul Burrows
  • Patent number: 5981306
    Abstract: A method is disclosed for fabricating organic light emitting devices (OLEDS) containing an indium tin oxide (ITO) layer that is deposited onto a fragile layer. The ITO layer is fabricated using a low, non-damaging, ITO deposition rate until a protective ITO layer is formed, at which point the ITO deposition rate is increased to a substantially higher deposition rate without causing damage to the underlying layers. OLEDs fabricated using the accelerated ITO deposition rate could be made with I-V characteristics having no practically discernible difference from the I-V characteristics of an OLED in which the ITO deposition rate was kept at a low deposition rate throughout the ITO deposition process.
    Type: Grant
    Filed: September 12, 1997
    Date of Patent: November 9, 1999
    Assignee: The Trustees of Princeton University
    Inventors: Paul Burrows, Stephen R. Forrest, Zilan Shen
  • Patent number: 5932895
    Abstract: Optical cavities in a stacked organic light emitting device (SOLEDS) can shift or attenuate the light emitted by the individual organic light emitting devices (OLEDs) in the stack. Interference caused by reflections within the stack, absorption, positioning of the light source, and the polarization of the emitted light can all determine how the spectra of the emitted light are affected by the SOLED structure. A detailed model that provides a good fit to measured SOLED emissions can be used to predict how a SOLED will affect light emitted by OLEDs. As a result, SOLED geometries that will optimize color saturation and external quantum efficiency can be predicted.
    Type: Grant
    Filed: May 20, 1997
    Date of Patent: August 3, 1999
    Assignee: The Trustees of Princeton University
    Inventors: Zilan Shen, Stephen R. Forrest, Paul Burrows