Patents by Inventor Zilong BAI

Zilong BAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ferroelectric memory IC as well as method of operating the same and method of preparing the same
    Patent number: 11145664
    Abstract: Disclosed is an integrated circuit for ferroelectric memory, the integrated circuit comprising: a ferroelectric memory array having a storage unit array formed on a ferroelectric single-crystal layer, wherein each ferroelectric memory unit in the ferroelectric memory array is at least formed by one storage unit in the storage unit array, or at least formed by one storage unit in the storage unit array and one transistor formed on a silicon substrate of a silicon-based reading and writing circuit that is electrically connected to the storage unit.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: October 12, 2021
    Assignee: Fudan University
    Inventors: Anquan Jiang, Yan Zhang, Zilong Bai
  • FERROELECTRIC MEMORY IC AS WELL AS METHOD OF OPERATING THE SAME AND METHOD OF PREPARING THE SAME
    Publication number: 20210202509
    Abstract: Disclosed is an integrated circuit for ferroelectric memory, the integrated circuit comprising: a ferroelectric memory array having a storage unit array formed on a ferroelectric single-crystal layer, wherein each ferroelectric memory unit in the ferroelectric memory array is at least formed by one storage unit in the storage unit array, or at least formed by one storage unit in the storage unit array and one transistor formed on a silicon substrate of a silicon-based reading and writing circuit that is electrically connected to the storage unit.
    Type: Application
    Filed: February 28, 2018
    Publication date: July 1, 2021
    Inventors: Anquan JIANG, Yan ZHANG, Zilong BAI
  • FERROELECTRIC MEMORY IC AS WELL AS METHOD OF OPERATING THE SAME AND METHOD OF PREPARING THE SAME
    Publication number: 20200243549
    Abstract: Disclosed is an integrated circuit for ferroelectric memory, the integrated circuit comprising: a ferroelectric memory array having a storage unit array formed on a ferroelectric single-crystal layer, wherein each ferroelectric memory unit in the ferroelectric memory array is at least formed by one storage unit in the storage unit array, or at least formed by one storage unit in the storage unit array and one transistor formed on a silicon substrate of a silicon-based reading and writing circuit that is electrically connected to the storage unit.
    Type: Application
    Filed: February 28, 2018
    Publication date: July 30, 2020
    Inventors: Anquan JIANG, Yan ZHANG, Zilong BAI
  • Non-destructive readout ferroelectric memory as well as method of preparing the same and method of operating the same
    Patent number: 9685216
    Abstract: A non-destructive readout ferroelectric memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory are disclosed. The ferroelectric memory comprises a ferroelectric thin film layer. The ferroelectric memory of the invention can realize a non-destructive readout by way of current, is suitable for a high density application, is simple in preparation and has a low cost.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: June 20, 2017
    Assignee: Fudan University
    Inventors: Anquan Jiang, Jun Jiang, Wenping Geng, Zilong Bai
  • NON-DESTRUCTIVE READOUT FERROELECTRIC MEMORY AS WELL AS METHOD OF PREPARING THE SAME AND METHOD OF OPERATING THE SAME
    Publication number: 20160358639
    Abstract: A non-destructive readout ferroelectric memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory are disclosed. The ferroelectric memory comprises a ferroelectric thin film layer. The ferroelectric memory of the invention can realize a non-destructive readout by way of current, is suitable for a high density application, is simple in preparation and has a low cost.
    Type: Application
    Filed: June 26, 2015
    Publication date: December 8, 2016
    Applicant: Fudan University
    Inventors: Anquan JIANG, Jun JIANG, Wenping GENG, Zilong BAI