Patents by Inventor Zilong Peng

Zilong Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8236576
    Abstract: A magnetic logic element with toroidal magnetic multilayers (5,6,8,9). The magnetic logic element comprises a toroidal closed section which is fabricated by etching a unit of magnetic multilayers (5,6,8,9) deposited on a substrate. Optionally, the magnetic logic element may also comprise a metal core (10) in the closed toroidal section. Said magnetic multilayers (5,6,8,9) unit is arranged on the input signal lines A, B, C and an output signal line O, and then is made into a closed toroidal. Subsequently, on the toroidal magnetic multilayered unit (5,6,8,9), the input signal lines A?, B?, C? and an output signal line O? are fabricated by etching. This magnetic logic element can reduce the demagnetization field and the shape anisotropy effectively, leading to the decrease of the reversal field of magnetic free layer. Furthermore, this magnetic logic element has stable working performance and long operation life of the device.
    Type: Grant
    Filed: April 11, 2007
    Date of Patent: August 7, 2012
    Assignee: Institute of Physics, Chinese Academy of Sciences
    Inventors: Xiufeng Han, Zhongming Zeng, Yunan Han, Lixian Jiang, Zilong Peng, Wenshan Zhan
  • Publication number: 20090273972
    Abstract: A magnetic logic element with toroidal magnetic multilayers (5,6,8,9). The magnetic logic element comprises a toroidal closed section which is fabricated by etching a unit of magnetic multilayers (5,6,8,9) deposited on a substrate. Optionally, the magnetic logic element may also comprise a metal core (10) in the closed toroidal section. Said magnetic multilayers (5,6,8,9) unit is arranged on the input signal lines A, B, C and an output signal line O, and then is made into a closed toroidal. Subsequently, on the toroidal magnetic multilayered unit (5,6,8,9), the input signal lines A?, B?, C? and an output signal line O? are fabricated by etching. This magnetic logic element can reduce the demagnetization field and the shape anisotropy effectively, leading to the decrease of the reversal field of magnetic free layer. Furthermore, this magnetic logic element has stable working performance and long operation life of the device.
    Type: Application
    Filed: April 11, 2007
    Publication date: November 5, 2009
    Applicant: Institute of Physics, Chinese Academy of Sciences
    Inventors: Xiufeng Han, Zhongming Zeng, Yunan Han, Lixian Jiang, Zilong Peng, Wenshan Zhan
  • Patent number: 7480171
    Abstract: The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.
    Type: Grant
    Filed: December 1, 2004
    Date of Patent: January 20, 2009
    Assignee: Institute of Physics Chinese Academy of Science
    Inventors: Zilong Peng, Xiufeng Han, Sufen Zhao, Weining Wang, Wenshan Zhan
  • Publication number: 20070183186
    Abstract: The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.
    Type: Application
    Filed: December 1, 2004
    Publication date: August 9, 2007
    Applicant: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Zilong Peng, Xiufeng Han, Sufen Zhao, Weining Wang, Wenshan Zhan