Abstract: A method for fabricating a semiconductor device includes sequentially laminating a separation layer and a first substrate layer on a sacrificial substrate, and forming a heat dissipation plate comprising a first region and a second region on the first substrate layer. The method further includes removing the sacrificial substrate and the separation layer, and patterning the first substrate layer to form a first substrate exposing the heat dissipation plate in the second region and contacting the heat dissipation plate in the first region, and forming a first element on the first substrate. The method still further includes forming a plurality of conductive pads disposed on the heat dissipation plate in the second region and a first line connecting at least one of the plurality of conductive pads to the first element, and forming a second element on the conductive pads in the second region.

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a heat dissipation plate including a first region and a second region, a first element disposed on the heat dissipation plate in the first region, and a second element disposed on the heat dissipation plate in the second region.

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a heat dissipation plate including a first region and a second region, a first element disposed on the heat dissipation plate in the first region, and a second element disposed on the heat dissipation plate in the second region. The first element includes a first substrate, the second element includes a second substrate, the first substrate includes a material different from a material of the second substrate, the first substrate contacts the heat dissipation plate, and the second element is bonded to the heat dissipation plate in a flip-chip bonding manner.

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a heat dissipation plate including a first region and a second region, a first element disposed on the heat dissipation plate in the first region, and a second element disposed on the heat dissipation plate in the second region. The first element includes a first substrate, the second element includes a second substrate, the first substrate includes a material different from a material of the second substrate, the first substrate contacts the heat dissipation plate, and the second element is bonded to the heat dissipation plate in a flip-chip bonding manner.

Abstract: Provided herein is a semiconductor device including a substrate; an active layer formed on top of the substrate; a protective layer formed on top of the active layer and having a first aperture; a source electrode, driving gate electrode and drain electrode formed on top of the protective layer; and a first additional gate electrode formed on top of the first aperture, wherein an electric field is applied to the active layer, protective layer and driving gate electrode due to a voltage applied to each of the source electrode, drain electrode and driving gate electrode, and the first additional gate electrode is configured to attenuate a size of the electric field applied to at least a portion of the active layer, protective layer and driving gate electrode.

Abstract: Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.

Abstract: Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.

Abstract: A first nitride semiconductor layer of a semiconductor device is provided on a substrate, a second nitride semiconductor layer is provided on the first nitride semiconductor layer, a first ohmic metal and a second ohmic metal are provided on the second nitride semiconductor layer, a recess region is provided in the second nitride semiconductor layer between the first ohmic metal and the second ohmic metal, a passivation layer covers side of the first ohmic metal and a bottom surface and sides of the recess region, and a Schottky electrode is provided on the first ohmic metal and extends into the recess region.

Abstract: Provided herein is a semiconductor device including a substrate; an active layer formed on top of the substrate; a protective layer formed on top of the active layer and having a first aperture; a source electrode, driving gate electrode and drain electrode formed on top of the protective layer; and a first additional gate electrode formed on top of the first aperture, wherein an electric field is applied to the active layer, protective layer and driving gate electrode due to a voltage applied to each of the source electrode, drain electrode and driving gate electrode, and the first additional gate electrode is configured to attenuate a size of the electric field applied to at least a portion of the active layer, protective layer and driving gate electrode.

Abstract: Disclosed are a field effect transistor for high voltage driving including a gate electrode structure in which a gate head extended in a direction of a drain is supported by a field plate embedded under a region of the gate head so as to achieve high voltage driving, and a manufacturing method thereof. Accordingly, the gate head extended in the direction of the drain is supported by the field plate electrically spaced by using an insulating layer, so that it is possible to stably manufacture a gate electrode including the extended gate head, and gate resistance is decreased by the gate head extended in the direction of the drain and an electric field peak value between the gate and the drain is decreased by the gate electrode including the gate head extended in the direction of the drain and the field plate proximate to the gate, thereby achieving an effect in that a breakdown voltage of a device is increased.

Abstract: Provided are fiber fabrication method and the fiber fabricated thereby. In this method, different monomer solutions are electrospun through nozzles whose outlets are stuck to each other and simultaneously interfacially polymerized to form a polymer fiber without a complicated process of preparing a polymer solution. Therefore, a polymer fiber can be simply prepared.

Abstract: An RFID tag includes: an antenna receiving an RF signal from a reader; an AFE (analog front end) generating voltage using the RF signal; and one or more switches interposed between the antenna and the AFE and controlling the connection between the antenna and the AFE through the switch operation.

Abstract: Disclosed are a printing plate and a mirror thereof, the printing plate including: printing portions for transferring an immersed solution, the printing portions being formed flat and arranged at regular intervals on one side of an upper part of the printing plate; and non-printing portions corresponding to a remaining area other than the printing portions, the non-printing portions being formed with at least two concavities and convexities respectively and arranged at regular intervals on the other side of the upper part of the printing plate.

Abstract: Mold structures for imprint lithography are provided. Mold chip patterns including patterns for nano structures are disposed on a mold substrate. A trench region is provided between the mold chip patterns. Protrusion portions protrude from a bottom surface of the trench region. The protrusion portions extend along the trench region in a plan view.

Abstract: Provided is a method of forming a fine pattern of a polymer thin film using a phenomenon that another material having a large difference in surface energy in comparison with a polymer thin film pattern is dewetted on the polymer thin film pattern. Two polymer materials having a large difference in surface energy can be applied to readily and conveniently form a fine pattern of a polymer thin film of micrometer or sub-micrometer grade.

Abstract: Provided are fiber fabrication method and the fiber fabricated thereby. In this method, different monomer solutions are electrospun through nozzles whose outlets are stuck to each other and simultaneously interfacially polymerized to form a polymer fiber without a complicated process of preparing a polymer solution. Therefore, a polymer fiber can be simply prepared.

Abstract: Provided is a method of manufacturing a via electrode by which productivity and production yield can be augmented or maximized. The method of the present invention includes: forming a via hole at a substrate; forming a catalyst layer at a sidewall and a bottom of the via hole; and forming a graphene layer in the via hole by exposing the catalyst layer to a solution mixed with graphene particles.

Abstract: Provided is a method for fabricating a polarizer. The method includes forming an unevenness structure pattern on a substrate, coating conductive nano-particles on an entire surface of the unevenness structure pattern, and planarizing an entire surface of the resultant substrate after the conductive nano-particles are coated on the unevenness structure pattern.

Abstract: An RFID tag includes: an antenna receiving an RF signal from a reader; an AFE (analog front end) generating voltage using the RF signal; and one or more switches interposed between the antenna and the AFE and controlling the connection between the antenna and the AFE through the switch operation.

Abstract: Disclosed are a printing plate and a mirror thereof, the printing plate including: printing portions for transferring an immersed solution, the printing portions being formed flat and arranged at regular intervals on one side of an upper part of the printing plate; and non-printing portions corresponding to a remaining area other than the printing portions, the non-printing portions being formed with at least two concavities and convexities respectively and arranged at regular intervals on the other side of the upper part of the printing plate.