Patents by Inventor Ziqing DUAN

Ziqing DUAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10930475
    Abstract: The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: February 23, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Prashant Kumar Kulshreshtha, Ziqing Duan, Abdul Aziz Khaja, Zheng John Ye, Amit Kumar Bansal
  • Patent number: 10930503
    Abstract: Processing methods comprising selectively replacing a first pillar material with a second pillar material in a self-aligned process are described. The first pillar material may be grown orthogonally to the substrate surface and replaced with a second pillar material to leave a substantially similar shape and alignment as the first pillar material.
    Type: Grant
    Filed: April 24, 2019
    Date of Patent: February 23, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Ziqing Duan, Abhijit Basu Mallick
  • Publication number: 20210028055
    Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).
    Type: Application
    Filed: October 13, 2020
    Publication date: January 28, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Pramit Manna, Ludovic Godet, Rui Cheng, Erica Chen, Ziqing Duan, Abhijit Basu Mallick, Srinivas Gandikota
  • Publication number: 20210013038
    Abstract: Methods of forming self-aligned patterns are described. A film material is deposited on a patterned film to fill and cover features formed by the patterned film. The film material is recessed to a level below the top of the patterned film. The recessed film is converted to a metal film by exposure to a metal precursor followed by volumetric expansion of the metal film.
    Type: Application
    Filed: September 22, 2020
    Publication date: January 14, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Abhijit Basu Mallick, Pramit Manna, Yihong Chen, Ziqing Duan, Rui Cheng, Shishi Jiang
  • Patent number: 10886172
    Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.
    Type: Grant
    Filed: April 14, 2020
    Date of Patent: January 5, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Yihong Chen, Ziqing Duan, Abhijit Basu Mallick, Kelvin Chan
  • Patent number: 10854511
    Abstract: Methods for forming 3D-NAND devices comprising recessing a poly-Si layer to a depth below a spaced oxide layer. A liner is formed on the spaced oxide layer and not on the recessed poly-Si layer. A metal layer is deposited in the gaps on the liner to form wordlines.
    Type: Grant
    Filed: June 5, 2018
    Date of Patent: December 1, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Yihong Chen, Yong Wu, Chia Cheng Chin, Xinliang Lu, Srinivas Gandikota, Ziqing Duan, Abhijit Basu Mallick
  • Patent number: 10840186
    Abstract: A first metallization layer comprises a set of first conductive lines that extend along a first direction on a first dielectric layer on a substrate. Pillars are formed on recessed first dielectric layers and a second dielectric layer covers the pillars. A dual damascene etch provides a contact hole through the second dielectric layer and an etch removes the pillars to form air gaps.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: November 17, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Susmit Singha Roy, Ziqing Duan, Abhijit Basu Mallick, Praburam Gopalraja
  • Patent number: 10811303
    Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: October 20, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Pramit Manna, Ludovic Godet, Rui Cheng, Erica Chen, Ziqing Duan, Abhijit Basu Mallick, Srinivas Gandikota
  • Patent number: 10784107
    Abstract: Methods of forming self-aligned patterns are described. A film material is deposited on a patterned film to fill and cover features formed by the patterned film. The film material is recessed to a level below the top of the patterned film. The recessed film is converted to a metal film by exposure to a metal precursor followed by volumetric expansion of the metal film.
    Type: Grant
    Filed: May 2, 2018
    Date of Patent: September 22, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Abhijit Basu Mallick, Pramit Manna, Yihong Chen, Ziqing Duan, Rui Cheng, Shishi Jiang
  • Patent number: 10770349
    Abstract: Processing methods to create self-aligned contacts are described. A conformal liner can be deposited in a feature in a substrate surface leaving a gap between the walls of the liner. A tungsten film can be deposited in the gap of the liner and volumetrically expanded. The expanded film can be removed and replaced with a contact material to a make a contact. In some embodiments, a conformal tungsten film can be formed in the feature leaving a gap between the walls. A dielectric can be deposited in the gap and the conformal tungsten film can be volumetrically expanded to grow two pillars. The pillars can be removed and replaced with a contact material to make two contacts.
    Type: Grant
    Filed: February 22, 2018
    Date of Patent: September 8, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Abhijit Basu Mallick, Ziqing Duan
  • Publication number: 20200243382
    Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.
    Type: Application
    Filed: April 14, 2020
    Publication date: July 30, 2020
    Inventors: Yihong Chen, Ziqing Duan, Abhijit Basu Mallick, Kelvin Chan
  • Patent number: 10699952
    Abstract: Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.
    Type: Grant
    Filed: April 25, 2019
    Date of Patent: June 30, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Atashi Basu, Abhijit Basu Mallick, Ziqing Duan, Srinivas Gandikota
  • Patent number: 10636659
    Abstract: Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: April 28, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Yihong Chen, Ziqing Duan, Yong Wu, Abhijit Basu Mallick, Srinivas Gandikota
  • Patent number: 10622251
    Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.
    Type: Grant
    Filed: July 8, 2019
    Date of Patent: April 14, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Yihong Chen, Ziqing Duan, Abhijit Basu Mallick, Kelvin Chan
  • Patent number: 10559497
    Abstract: Methods for filling a substrate feature with a seamless tungsten fill are described. The methods include depositing a tungsten film, oxidizing the tungsten film to a tungsten oxide pillar, reducing the tungsten oxide film to a seamless tungsten gapfill and optionally depositing additional tungsten on the tungsten gapfill.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: February 11, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Yong Wu, Yihong Chen, Shishi Jiang, Ziqing Duan, Abhijit Basu Mallick, Srinivas Gandikota
  • Publication number: 20190385849
    Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.
    Type: Application
    Filed: July 25, 2019
    Publication date: December 19, 2019
    Inventors: David Thompson, Benjamin Schmiege, Jeffrey W. Anthis, Abhijit Basu Mallick, Susmit Singha Roy, Ziqing Duan, Yihong Chen, Kelvin Chan, Srinivas Gandikota
  • Patent number: 10490411
    Abstract: Embodiments described herein generally relate methods for selective deposition of carbon structures. In one embodiment, a method includes forming energized carbon species in a process chamber, diffusing the energized carbon species through a metal layer, wherein the metal layer is disposed on a first surface of a first material that is coplanar with a second surface of a second material, and forming a carbon structure between the first surface of the first material and the metal layer from the energized carbon species. Because the carbon structure is selectively deposited on the first surface and self-aligned to the first material, the possibility of overlay or misalignment of subsequent device layers formed on the first surface of the first material after the removal of the carbon structure is significantly reduced.
    Type: Grant
    Filed: May 19, 2017
    Date of Patent: November 26, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kurtis Leschkies, Steven Verhaverbeke, Ziqing Duan, Abhijit Basu Mallick
  • Publication number: 20190348368
    Abstract: A first metallization layer comprises a set of first conductive lines that extend along a first direction on a first dielectric layer on a substrate. Pillars are formed on recessed first dielectric layers and a second dielectric layer covers the pillars. A dual damascene etch provides a contact hole through the second dielectric layer and an etch removes the pillars to form air gaps.
    Type: Application
    Filed: July 25, 2019
    Publication date: November 14, 2019
    Inventors: Susmit Singha Roy, Ziqing Duan, Abhijit Basu Mallick, Praburam Gopalraja
  • Publication number: 20190333810
    Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.
    Type: Application
    Filed: July 8, 2019
    Publication date: October 31, 2019
    Inventors: Yihong Chen, Ziqing Duan, Abhijit Basu Mallick, Kelvin Chan
  • Publication number: 20190326110
    Abstract: Embodiments disclosed herein relate to methods for forming memory devices, and more specifically to improved methods for forming a dielectric encapsulation layer over a memory material in a memory device. In one embodiment, the method includes thermally depositing a first material over a memory material at a temperature less than the temperature of the thermal budget of the memory material, exposing the first material to nitrogen plasma to incorporate nitrogen in the first material, and repeating the thermal deposition and nitrogen plasma operations to form a hermetic, conformal dielectric encapsulation layer over the memory material. Thus, a memory device having a hermetic, conformal dielectric encapsulation layer over the memory material is formed.
    Type: Application
    Filed: November 16, 2017
    Publication date: October 24, 2019
    Inventors: Milind GADRE, Shaunak MUKHERJEE, Praket P. JHA, Deenesh PADHI, Ziqing DUAN, Abhijit B. MALLICK