Abstract: A power amplifier system front end measures both forward and reverse power associated with an RF transmit signal. A processor is configured to use measurements derived from the measured forward and reverse power output to adjust the RF transmit signal in order to compensate for one or more memory effects of the power amplifier system.

Abstract: A power amplifier system front end measures both forward and reverse power associated with an RF transmit signal. A processor is configured to use measurements derived from the measured forward and reverse power output to adjust the RF transmit signal in order to compensate for one or more memory effects of the power amplifier system.

Abstract: A power amplifier system front end measures both forward and reverse power associated with an RF transmit signal. A processor is configured to use measurements derived from the measured forward and reverse power output to adjust the RF transmit signal in order to compensate for one or more memory effects of the power amplifier system.

Abstract: A power amplifier system front end measures both forward and reverse power associated with an RF transmit signal. A processor is configured to use measurements derived from the measured forward and reverse power output to adjust the RF transmit signal in order to compensate for one or more memory effects of the power amplifier system.

Abstract: Systems, devices and methods related to stacked band selection switch devices. In some embodiments, an RF module can include a packaging substrate and a power amplifier (PA) assembly implemented on a PA die mounted on the packaging substrate. The RF module can further include an output matching network (OMN) device mounted on the packaging substrate and a band selection switch device mounted on the OMN device. The OMN device can be configured to provide output matching functionality for at least a portion of the PA assembly.

Abstract: Systems, devices and methods related to stacked band selection switch devices. In some embodiments, an RF module can include a packaging substrate and a power amplifier (PA) assembly implemented on a PA die mounted on the packaging substrate. The RF module can further include an output matching network (OMN) device mounted on the packaging substrate and a band selection switch device mounted on the OMN device. The OMN device can be configured to provide output matching functionality for at least a portion of the PA assembly.

Abstract: Systems, devices and methods related to stacked band selection switch devices. In some embodiments, an RF module can include a packaging substrate and a power amplifier (PA) assembly implemented on a PA die mounted on the packaging substrate. The RF module can further include an output matching network (OMN) device mounted on the packaging substrate and a band selection switch device mounted on the OMN device. The OMN device can be configured to provide output matching functionality for at least a portion of the PA assembly.

Abstract: Reference circuits for biasing radio frequency electronics are provided herein. In certain implementations, a gallium arsenide die includes a power amplifier configured to provide amplification to a signal, a reference voltage circuit including an output terminal that provides a reference voltage, and a mirror circuit configured to bias the power amplifier based on the reference voltage. The reference voltage circuit includes a bipolar transistor, a field effect transistor, and a circuit portion that generates a voltage that is proportional to absolute temperature. The reference voltage circuit generates the reference voltage based on a sum of a base-to-emitter voltage of the bipolar transistor, a turn-on voltage of the field effect transistor, and the voltage that is proportional to absolute temperature.

Abstract: Reference circuits for biasing radio frequency electronics are provided herein. In certain implementations, a gallium arsenide die includes a power amplifier configured to provide amplification to a signal, a reference voltage circuit including an output terminal that provides a reference voltage, and a mirror circuit configured to bias the power amplifier based on the reference voltage. The reference voltage circuit includes a bipolar transistor, a field effect transistor, and a circuit portion that generates a voltage that is proportional to absolute temperature. The reference voltage circuit generates the reference voltage based on a sum of a base-to-emitter voltage of the bipolar transistor, a turn-on voltage of the field effect transistor, and the voltage that is proportional to absolute temperature.

Abstract: Systems, devices and methods related to stacked band selection switch devices. In some embodiments, an RF module can include a packaging substrate and a power amplifier (PA) assembly implemented on a PA die mounted on the packaging substrate. The RF module can further include an output matching network (OMN) device mounted on the packaging substrate and a band selection switch device mounted on the OMN device. The OMN device can be configured to provide output matching functionality for at least a portion of the PA assembly.

Abstract: A voltage reference circuit implemented in GaAs to provide an output voltage component proportional to absolute temperature is described herein. The various embodiments of the voltage reference circuit described here can be used to provide precision voltage to bias a RF device. The voltage reference circuit can be provided on the same die as the RF device. The various embodiments described herein can be implemented in a GaAs material system.

Abstract: Systems, devices and methods related to improved radio-frequency (RF) modules. In some embodiments, an RF module can include a packaging substrate, a power amplifier (PA) assembly implemented on a first die mounted on the packaging substrate, and a controller circuit implemented on a second die mounted on the first die. The controller circuit can be configured to provide at least some control of the PA assembly. The RF module can further include one or more output matching network (OMN) devices mounted on the packaging substrate and configured to provide output matching functionality for the PA assembly. The RF module can further include a band selection switch device mounted on each OMN device.

Abstract: A circuit for biasing a gallium arsenide (GaAs) power amplifier includes a reference voltage generator circuit implemented in a gallium arsenide (GaAs) material system, a field effect transistor (FET) bias circuit implemented in the gallium arsenide material system and adapted to receive an output of the reference voltage generator circuit and adapted to provide an output to a radio frequency (RF) amplifier stage.

Abstract: A voltage reference circuit implemented in GaAs to provide an output voltage component proportional to absolute temperature is described herein. The various embodiments of the voltage reference circuit described here can be used to provide precision voltage to bias a RF device. The voltage reference circuit can be provided on the same die as the RF device. The various embodiments described herein can be implemented in a GaAs material system.

Abstract: Methods in which an encrypted transaction validation code is received which positively identifies a first transaction for a first entity, the first entity having a first entity identifier, and the first transaction is electronically verified as being valid by use of the first entity identifier and the validation code. The first entity identifier can be transferred as an account number and the validation code transferred to the money source in a non-account data field. A money source can validate the validation code by duplicating the encryption process used to create the validation code and by then comparing the result to the validation code received. The validation code can be, at least in part, encrypted, and a money source can validate the validation code by duplicating a validation code encryption process and by then comparing the result to the validation code received.

Abstract: A power amplifier system front end measures both forward and reverse power associated with an RF transmit signal. A processor is configured to use measurements derived from the measured forward and reverse power output to adjust the RF transmit signal in order to compensate for one or more memory effects of the power amplifier system.

Abstract: Systems, devices and methods related to improved radio-frequency (RF) modules. In some embodiments, an RF module can include a packaging substrate, a power amplifier (PA) assembly implemented on a first die mounted on the packaging substrate, and a controller circuit implemented on a second die mounted on the first die. The controller circuit can be configured to provide at least some control of the PA assembly. The RF module can further include one or more output matching network (OMN) devices mounted on the packaging substrate and configured to provide output matching functionality for the PA assembly. The RF module can further include a band selection switch device mounted on each OMN device.

Abstract: Method for broadcasting a magnetic stripe data packet from an electronic card by measuring a swipe speed of the electronic card past a magnetic reader head during a swipe of the electronic card past the magnetic reader head and then adjusting a broadcast signal containing the magnetic stripe data packet according to the measured swipe speed so that the magnetic stripe data packet in the broadcast signal is read by the magnetic reader head during said swipe. The swipe speed is measured by a speed sensor. The electronic card can contain a false swipe detection means so that the capacitive sensor changes from a sleep mode to an active mode after a wake up sensor is activated during the swipe and the swipe speed is measured by the capacitive sensor while it is in the active mode before the broadcast signal is broadcast during the swipe.

Abstract: A circuit for biasing a gallium arsenide (GaAs) power amplifier includes a reference voltage generator circuit implemented in a gallium arsenide (GaAs) material system, a field effect transistor (FET) bias circuit implemented in the gallium arsenide material system and adapted to receive an output of the reference voltage generator circuit and adapted to provide an output to a radio frequency (RF) amplifier stage.

Abstract: Method for broadcasting a magnetic stripe data packet from an electronic card by measuring a swipe speed of the electronic card past a magnetic reader head during a swipe of the electronic card past the magnetic reader head and then adjusting a broadcast signal containing the magnetic stripe data packet according to the measured swipe speed so that the magnetic stripe data packet in the broadcast signal is read by the magnetic reader head during said swipe.