Patents by Inventor Ziv Hameiri

Ziv Hameiri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photovoltaic device structure and method
    Patent number: 10199523
    Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: February 5, 2019
    Assignees: NEWSOUTH INNOVATIONS PTY LIMITED, SUNTECH POWER INTERNATIONAL LTD.
    Inventors: Alison Maree Wenham, Ziv Hameiri, Jing Jia Ji, Ly Mai, Zhengrong Shi, Budi Tjahjono, Stuart Ross Wenham
  • PHOTOVOLTAIC DEVICE STRUCTURE AND METHOD
    Publication number: 20150318413
    Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.
    Type: Application
    Filed: June 25, 2015
    Publication date: November 5, 2015
    Applicants: Suntech Power International Ltd., NewSouth Innovations Pty Limited
    Inventors: Alison Maree Wenham, Ziv Hameiri, Ji Jing Jia, Ly Mai, Shi Zhengrong, Budi Tjahjono, Stuart Ross Wenham
  • Method of forming doped regions in a photovoltaic device
    Patent number: 9136126
    Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.
    Type: Grant
    Filed: February 11, 2010
    Date of Patent: September 15, 2015
    Assignee: NewSouth Innovations Pty Limited
    Inventors: Alison Maree Wenham, Ziv Hameiri, Ji Jing Jia, Ly Mai, Shi Zhengrong, Budi Tjahjono, Stuart Ross Wenham
  • REAR JUNCTION SOLAR CELL
    Publication number: 20120048366
    Abstract: A photovoltaic device is formed with a passivated light receiving first surface of a semiconductor material layer of a first dopant type. A region of oppositely doped semiconductor material is formed to create a p-n junction on at least part of a second surface located opposite to the light receiving first surface of the semiconducting material layer. First contacts are formed on the light receiving first surface of the first dopant type semiconductor material layer, and second contacts are formed on the oppositely doped material on the second surface of the semiconductor material layer.
    Type: Application
    Filed: January 15, 2010
    Publication date: March 1, 2012
    Applicant: NEWSOUTH INNOVATIONS PTY LIMITED
    Inventors: Ly Mai, Matthew B. Edwards, Martin A. Green, Brett Hallam, Ziv Hameiri, Nicole B. Kuepper, Adeline Sugianto, Budi S. Tjahjono, Stanley Wang, Alison M. Wenham, Stuart R. Wenham