Abstract: A circuitry and a detection method using the circuitry. The circuitry includes circuits and electrochemical sensors connected to the circuits; the circuits include a reference voltage circuit, a potentiostatic circuit, and a micro-signal measuring circuit; on-off switches are provided on corresponding circuits. A test device and a detection method which use the circuitry can effectively reduce signal noise, reduce fluctuation of detection signals during a detection process, and improve the precision and accuracy of sample detection results.

Abstract: A power distribution circuit of an uninterruptible power supply is provided, where a first port of the power distribution circuit of the uninterruptible power supply is electrically connected to a second port. A third port is electrically connected to the second port by using a compensation circuit. When an input voltage of the first port is less than a rated voltage of a load of the second port, an input voltage of the third port is input to the compensation circuit. The compensation circuit converts a direct current into an alternating current, so that the alternating current output by the compensation circuit and the input voltage of the first port jointly supply power to the load of the second port.

Abstract: A processing system and processing method for blocked microreactor. The processing system comprises an gas intake device, a flushing device, a microreactor to be processed and a plasma processing device. One end of the microreactor to be processed is connected with the gas intake device and the flushing device through a pipeline; the other end of the microreactor to be processed is connected with a waste liquid bottle through the pipeline; and the microreactor to be processed is arranged between electrodes of the plasma processing device. The present invention uses the effective reactivity of plasma and active free radicals in an excitation atmosphere to crack micro blockage in a micro channel in a short time. The method of the present invention has high flexibility and strong controllability, and can select plasma electrodes according to blocked regions to crack the blockage in a specific region.

Abstract: A method for evaluating inhalation administration and a system for evaluating inhalation administration, the system including a flow detector and an intelligent terminal. The method includes the following steps: 1) obtaining patient-related data of an inspiration flow-time curve; 2) according to an inspiration flow parameter of inhalation administration, obtaining a start time and an end time of each effective inspiration flow section on the inspiration flow-time curve; and 3) calculating an effective inspiration volume Veffective based on the inspiration flow-time curve and a series of time parameters ti1 and ti2 obtained. The method for evaluating inhalation administration and the system for evaluating inhalation administration provide a basis for medical workers to select an appropriate inhalation administration device for patients.

Abstract: An object of the present invention is to provide a method for manufacturing an optical device having a laser diode, which method is suitable for mass production, and an optical device having a laser diode which allows accurate property evaluations thereof with small measurement errors. Specifically, the method includes: an etching process of etching a semiconductor lamination unit to form a mesa structure having a resonator end face, thereby forming a laser diode; and a reflecting layer forming process of forming a light reflecting layer such that the light reflecting layer covers entire side surfaces of the mesa structure, wherein the semiconductor lamination unit has a substate, a n-type clad layer including a nitride semiconductor layer having n-type conductivity, a light-emitting layer including at least one quantum well, and a p-type clad layer including a nitride semiconductor layer having p-type conductivity, laminated in this order.

Abstract: A terminal device obtains, from a credential issuing device, a first encrypted information set and a first credential information set that correspond to a plurality of pieces of first user information, where the first encrypted information set includes a plurality of pieces of first encrypted information obtained after encryption is correspondingly performed on the plurality of pieces of first user information, and the first credential information set includes a plurality of pieces of first credential information obtained after issuing processing is performed on the plurality of pieces of first user information; the terminal device determines, based on the first encrypted information set and the first credential information set in a first set, target credential information and target user information that correspond to target user information of a user as a target verification set; and the terminal device provides the target verification set for a credential verification device.

Abstract: This application discloses a method used to remove a target blockchain node group of a first tenant from a channel. In the method, an execution node of a second tenant receives configuration information of the target blockchain node group of the first tenant which is sent by a management node, obtains channel configuration information of the channel from a consensus organization, and generates channel adjustment information based on the channel configuration information and the configuration information of the target blockchain node group. The execution node of the second tenant sends the channel adjustment information to the consensus organization, and the consensus organization generates a block including the channel adjustment information. A blockchain node group of the second tenant obtains the block from the consensus organization, and adds the block to a blockchain stored in the second tenant.

Abstract: The present invention discloses a processing system and processing method for blocked microreactor. The processing system comprises an air intake device, a flushing device, a microreactor to be processed and a plasma processing device. One end of the microreactor to be processed is connected with the air intake device and the flushing device through a pipeline; the other end of the microreactor to be processed is connected with a waste liquid bottle through the pipeline; and the microreactor to be processed is arranged between electrodes of the plasma processing device. The present invention uses the effective reactivity of plasma and active free radicals in an excitation atmosphere to crack micro blockage in a micro channel in a short time. The method of the present invention has high flexibility and strong controllability, and can select plasma electrodes according to blocked regions to crack the blockage in a specific region.

Abstract: To provide a nitride semiconductor element having a better contact resistance reduction effect also in the case of a light emitting element containing AlGaN having a high Al composition. The nitride semiconductor element has a substrate 1, a first conductivity type first nitride semiconductor layer 2 formed on the substrate 1, and a first electrode layer 4 formed on the first nitride semiconductor layer 2. The first electrode layer 4 contains aluminum and nickel, and both aluminum and an alloy containing aluminum and nickel are present in a contact surface to the first nitride semiconductor layer 2 or in the vicinity of the contact surface.

Abstract: A laser diode (1) includes an AlN single crystal substrate (11), an n-type cladding layer (12) formed on the substrate and including a nitride semiconductor layer having n-type conductivity, a light-emitting layer (14) formed on the n-type cladding layer and including one or more quantum wells, a p-type cladding layer (20) formed on the light-emitting layer and including a nitride semiconductor layer having p-type conductivity, and a p-type contact layer (18) formed on the p-type cladding layer and including a nitride semiconductor that includes GaN. The p-type cladding layer includes a p-type longitudinal conduction layer (16) that includes AlsGa1?sN (0.3?s?1), has a composition gradient such that the Al composition s decreases with increased distance from the substrate, and has a film thickness of less than 0.5 ?m, and a p-type transverse conduction layer (17) that includes AltGa1?tN (0<t?1).

Abstract: Described herein is a system and remote server that may enable a user device to gain access to a secure physical area or physical resource. The remote server may generate, store, and send a first access token to a user device in response to a request to access the physical area or physical resource. The remote server can receive an authentication request from a universal access control device at the location of the physical area or physical resource. The authentication request can contain a second access token and location information of the user device. The remote server can verify the second access token by comparing it to the stored first access token and location information about the access control device. Upon authentication and verification, the user device may gain entry to the secure area.

Abstract: A method of producing an ultraviolet laser diode with a low oscillation threshold current density includes stacking a first cladding layer, a light-emitting layer, and a second cladding layer on a substrate in this order to form a nitride semiconductor laminate (step S101), etching at least a portion of the nitride semiconductor laminate to form a mesa structure and setting the ratio between the length of the resonator end faces and the length of the side surfaces of the mesa structure in plan view between 1:5 and 1:500 (step S102), disposing first conductive material on a portion of a first area and applying heat treatment of 400° C. or higher to form a first electrode (step S103), and disposing a second conductive material in an area on the second cladding layer, at a distance of 5 um or more from the side surfaces, to form a second electrode (step S104).

Abstract: An object of the present invention is to provide a method for manufacturing an optical device having a laser diode, which method is suitable for mass production, and an optical device having a laser diode which allows accurate property evaluations thereof with small measurement errors. Specifically, the method includes: an etching process of etching a semiconductor lamination unit to form a mesa structure having a resonator end face, thereby forming a laser diode; and a reflecting layer forming process of forming a light reflecting layer such that the light reflecting layer covers entire side surfaces of the mesa structure, wherein the semiconductor lamination unit has a substate, a n-type clad layer including a nitride semiconductor layer having n-type conductivity, a light-emitting layer including at least one quantum well, and a p-type clad layer including a nitride semiconductor layer having p-type conductivity, laminated in this order.

Abstract: This application discloses a method used to remove a target blockchain node group of a first tenant from a channel. In the method, an execution node of a second tenant receives configuration information of the target blockchain node group of the first tenant which is sent by a management node, obtains channel configuration information of the channel from a consensus organization, and generates channel adjustment information based on the channel configuration information and the configuration information of the target blockchain node group. The execution node of the second tenant sends the channel adjustment information to the consensus organization, and the consensus organization generates a block including the channel adjustment information. A blockchain node group of the second tenant obtains the block from the consensus organization, and adds the block to a blockchain stored in the second tenant.

Abstract: To provide a nitride semiconductor element having a better contact resistance reduction effect also in the case of a light emitting element containing AlGaN having a high Al composition. The nitride semiconductor element has a substrate 1, a first conductivity type first nitride semiconductor layer 2 formed on the substrate 1, and a first electrode layer 4 formed on the first nitride semiconductor layer 2. The first electrode layer 4 contains aluminum and nickel, and both aluminum and an alloy containing aluminum and nickel are present in a contact surface to the first nitride semiconductor layer 2 or in the vicinity of the contact surface.

Abstract: To provide a nitride semiconductor element having a better contact resistance reduction effect also in the case of a light emitting element containing AlGaN having a high Al composition. The nitride semiconductor element has a substrate 1, a first conductivity type first nitride semiconductor layer 2 formed on the substrate 1, and a first electrode layer 4 formed on the first nitride semiconductor layer 2. The first electrode layer 4 contains aluminum and nickel, and both aluminum and an alloy containing aluminum and nickel are present in a contact surface to the first nitride semiconductor layer 2 or in the vicinity of the contact surface.

Abstract: A blockchain maintenance method adds a target blockchain node group of a first tenant to a channel. In the method, a management node sends new channel configuration information of the channel to an execution node of a second tenant. The execution node of the second tenant generates incremental configuration information of the channel based on the new channel configuration information and old channel configuration information of the channel, and sends the incremental configuration information to a consensus organization. Each blockchain node group that has joined the channel obtains, from the consensus organization, a block including the incremental configuration information, and adds the block to a stored blockchain, to reach a consensus that the target blockchain node group joins the channel. The target blockchain node group is configured based on the incremental configuration information to join the channel.

Abstract: Described herein is a system for controlling access to a physical location. In some embodiments, a user device may provide user credentials to an input device of the access system. The input device may transmit the user credentials to a splitter, in some examples, permit access to the physical location via an access control board. In other examples, the input device may transmit the user credentials from a splitter to a network-connected gateway and then permit access to the physical location via the access control board. In either example, the power and signal wires may be reused for the splitter and/or network-connected gateway. The access control board may be coupled with an electrically-controlled device and configured to allow access to the physical location with one or more electronic signals to the electrically-controlled device. The electrically-controlled device may allow access when the user credentials are authenticated by the system.

Abstract: Described herein is a system and universal access control device that may enable a user device to gain access to a secure area or resource during a particular time duration. In some embodiments, a user device may relay a received access token to the universal access device via a wireless transmission at a particular time. The universal access device may verify the authenticity of the access token by relaying the access token information to the remote server, which may authenticate the user device and verify that the user device is permitted access at the particular time. Upon authentication and verification, the user may gain entry to the secure area.

Abstract: Described herein is a system and universal access control device that may enable a user device to gain access to a secure area or resource during a particular time duration. In some embodiments, a user device may relay a received access token to the universal access device via a wireless transmission at a particular time. The universal access device may verify the authenticity of the access token by relaying the access token information to the remote server, which may authenticate the user device and verify that the user device is permitted access at the particular time. Upon authentication and verification, the user may gain entry to the secure area.