Patents by Inventor Ziyun Wang

Ziyun Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110165762
    Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.
    Type: Application
    Filed: January 4, 2011
    Publication date: July 7, 2011
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum
  • Publication number: 20110136343
    Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.
    Type: Application
    Filed: February 15, 2011
    Publication date: June 9, 2011
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum, Bryan Hendrix, Jeffrey F. Roeder
  • Patent number: 7910765
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Grant
    Filed: July 17, 2010
    Date of Patent: March 22, 2011
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Ravi K. Laxman, Thomas H. Baum, Bryan C. Hendrix, Jeffrey F. Roeder
  • Patent number: 7887883
    Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.
    Type: Grant
    Filed: May 11, 2010
    Date of Patent: February 15, 2011
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum, Bryan C. Hendrix, Jeffrey F. Roeder
  • Patent number: 7863203
    Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.
    Type: Grant
    Filed: January 24, 2008
    Date of Patent: January 4, 2011
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum
  • Publication number: 20100314590
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Application
    Filed: August 24, 2010
    Publication date: December 16, 2010
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Ziyun WANG, Chongying Xu, Bryan Hendrix, Jeffrey Roeder, Tianniu Chen, Thomas H. Baum
  • Publication number: 20100285663
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Application
    Filed: July 17, 2010
    Publication date: November 11, 2010
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Ziyun WANG, Chongying Xu, Ravi K. Laxman, Thomas H. Baum, Bryan Hendrix, Jeffrey Roeder
  • Publication number: 20100221914
    Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.
    Type: Application
    Filed: May 11, 2010
    Publication date: September 2, 2010
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum, Bryan Hendrix, Jeffrey F. Roeder
  • Patent number: 7786320
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Grant
    Filed: May 12, 2009
    Date of Patent: August 31, 2010
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Ravi K. Laxman, Thomas H. Baum, Bryan C. Hendrix, Jeffrey F. Roeder
  • Patent number: 7781605
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Grant
    Filed: October 13, 2009
    Date of Patent: August 24, 2010
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Tianniu Chen, Thomas H. Baum
  • Patent number: 7713346
    Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.
    Type: Grant
    Filed: October 7, 2008
    Date of Patent: May 11, 2010
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum, Bryan C. Hendrix, Jeffrey F. Roeder
  • Publication number: 20100068894
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Application
    Filed: October 13, 2009
    Publication date: March 18, 2010
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Ziyun Wang, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Tianniu Chen, Thomas H. Baum
  • Publication number: 20090281344
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Application
    Filed: May 12, 2009
    Publication date: November 12, 2009
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Ziyun Wang, Chongying Xu, Ravi K. Laxman, Thomas H. Baum, Bryan Hendrix, Jeffrey Roeder
  • Patent number: 7601860
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Grant
    Filed: June 17, 2004
    Date of Patent: October 13, 2009
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Bryan Hendrix, Jeffrey Roeder, Tianniu Chen, Thomas H. Baum
  • Patent number: 7579496
    Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.
    Type: Grant
    Filed: October 10, 2003
    Date of Patent: August 25, 2009
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum
  • Patent number: 7531679
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Grant
    Filed: November 14, 2002
    Date of Patent: May 12, 2009
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Ravi K. Laxman, Thomas H. Baum, Bryan Hendrix, Jeffrey Roeder
  • Publication number: 20090084288
    Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.
    Type: Application
    Filed: October 7, 2008
    Publication date: April 2, 2009
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum, Bryan Hendrix, Jeffrey F. Roeder
  • Publication number: 20090020140
    Abstract: Methods and compositions for purging and cleaning a semiconductor fabrication system are disclosed herein. In general, the disclosed methods utilize solvents comprising hydrofluoroethers. Hydrofluoroethers are non-toxic and have low moisture content, preventing heat generation from organometallic precursor hydrolysis. In an embodiment, a method of cleaning a semiconductor fabrication system comprises dissolving at least one chemical precursor used in semiconductor fabrication in at least one delivery line with a solvent to clean the at least one delivery line. The solvent generally comprises a hydrofluoroether. The methods and compositions may be used in a variety of semiconductor film deposition processes.
    Type: Application
    Filed: June 9, 2008
    Publication date: January 22, 2009
    Applicant: AIR LIQUIDE ELECTRONICS U.S. LP
    Inventors: Zhiwen WAN, Ashutosh Misra, Ziyun Wang
  • Patent number: 7446217
    Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.
    Type: Grant
    Filed: October 31, 2003
    Date of Patent: November 4, 2008
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum, Bryan Hendrix, Jeffrey F. Roeder
  • Patent number: 7439318
    Abstract: An analytical technique for the accurate and precise measurement of trace water in chemical reagents, comprising the steps of combining a chemical reagent comprising ?5 ppm water, with hexafluoroacetone (HFA), to form a sample mixture comprising at least the chemical reagent and a water derivative of hexafluoroacetone; and measuring the concentration of the water derivative of hexafluoroacetone by gas chromatography.
    Type: Grant
    Filed: March 13, 2007
    Date of Patent: October 21, 2008
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Alexander S. Borovik, Ziyun Wang, Chongying Xu, Thomas H. Baum