Abstract: The present disclosure relates to a World Band Radio Frequency Power Amplifier and a World Band Radio Frequency Front End Module. The World Band Power Amplifier can contain at least one broadband power amplifier connected to a switch which can direct an RF input signal to a plurality of transmission paths, each transmission path configured for a different frequency. A power amplifier module has a forward power (FP) sensor and a reflective power (RP) sensor. A Voltage Standing Wave Ratio (VSWR) Processing Control Circuit (VPCC) is configured to tune the matching antenna for optimal radio frequency operation and protect the power amplifier in conjunction with the power amplifier protection controller. The World Band RFFE Module is more integrated version of the World Band Power Amplifier that can contain broadband RF PA(s), switches, logic controls, filters, duplexers and other active and passive components.

Abstract: The present disclosure relates to a World Band Radio Frequency Power Amplifier and a World Band Radio Frequency Front End Module. The World Band Power Amplifier can contain at least one broadband power amplifier connected to a switch which can direct an RF input signal to a plurality of transmission paths, each transmission path configured for a different frequency. The World Band RFFE Module is more integrated version of the World Band Power Amplifier that can contain broadband RF PA(s), switches, logic controls, filters, duplexers and other active and passive components. The module may also include a thermal protection system capable of effecting operation of the broadband power amplifier.

Abstract: The present disclosure relates to a World Band Radio Frequency Power Amplifier and a World Band Radio Frequency Front End Module. The World Band Power Amplifier can contain at least one broadband power amplifier connected to a switch which can direct an RF input signal to a plurality of transmission paths, each transmission path configured for a different frequency. The World Band RFFE Module is more integrated version of the World Band Power Amplifier that can contain broadband RF PA(s), switches, logic controls, filters, duplexers and other active and passive components.

Abstract: The present disclosure relates to a World Band Radio Frequency Power Amplifier and a World Band Radio Frequency Front End Module. The World Band Power Amplifier can contain at least one broadband power amplifier connected to a switch which can direct an RF input signal to a plurality of transmission paths, each transmission path configured for a different frequency. The World Band RFFE Module is more integrated version of the World Band Power Amplifier that can contain broadband RF PA(s), switches, logic controls, filters, duplexers and other active and passive components.

Abstract: A semiconductor die for power amplification includes a substrate comprising a front surface and a back surface, a power amplifier on the front surface of the substrate and is configured to amplify an input signal received at an input node and to output an amplified signal at an output node; a first electric terminal on the front surface of the substrate, wherein the first electric terminal is electrically coupled to the input node of the power amplifier; a second electric terminal on the back surface of the substrate, and a first via that runs from the front surface to the back surface of the substrate and electrically connects the first terminal and the second electric terminal. The second electric terminal can receive the input signal that is to be received by the input node of the power amplifier.