Patents by Inventor Zoe Chen
Zoe Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11894276Abstract: A method includes providing a structure having a first channel member and a second channel member over a substrate. The first channel member is located in a first region of the structure and the second channel member is located in a second region of the structure. The method also includes forming a first oxide layer over the first channel member and a second oxide layer over the second channel member, forming a first dielectric layer over the first oxide layer and a second dielectric layer over the second oxide layer, and forming a capping layer over the second dielectric layer but not over the first dielectric layer. The method further includes performing an annealing process to increase a thickness of the second oxide layer under the capping layer.Type: GrantFiled: August 30, 2021Date of Patent: February 6, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Wei Lee, Wen-Hung Huang, Kuo-Feng Yu, Jian-Hao Chen, Hsueh-Ju Chen, Zoe Chen
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Patent number: 11855098Abstract: In an embodiment, a method includes: forming a gate dielectric layer on an interface layer; forming a doping layer on the gate dielectric layer, the doping layer including a dipole-inducing element; annealing the doping layer to drive the dipole-inducing element through the gate dielectric layer to a first side of the gate dielectric layer adjacent the interface layer; removing the doping layer; forming a sacrificial layer on the gate dielectric layer, a material of the sacrificial layer reacting with residual dipole-inducing elements at a second side of the gate dielectric layer adjacent the sacrificial layer; removing the sacrificial layer; forming a capping layer on the gate dielectric layer; and forming a gate electrode layer on the capping layer.Type: GrantFiled: November 14, 2022Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Yen Tsai, Ming-Chi Huang, Zoe Chen, Wei-Chin Lee, Cheng-Lung Hung, Da-Yuan Lee, Weng Chang, Ching-Hwanq Su
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Publication number: 20230073400Abstract: In an embodiment, a method includes: forming a gate dielectric layer on an interface layer; forming a doping layer on the gate dielectric layer, the doping layer including a dipole-inducing element; annealing the doping layer to drive the dipole-inducing element through the gate dielectric layer to a first side of the gate dielectric layer adjacent the interface layer; removing the doping layer; forming a sacrificial layer on the gate dielectric layer, a material of the sacrificial layer reacting with residual dipole-inducing elements at a second side of the gate dielectric layer adjacent the sacrificial layer; removing the sacrificial layer; forming a capping layer on the gate dielectric layer; and forming a gate electrode layer on the capping layer.Type: ApplicationFiled: November 14, 2022Publication date: March 9, 2023Inventors: Cheng-Yen Tsai, Ming-Chi Huang, Zoe Chen, Wei-Chin Lee, Cheng-Lung Hung, Da-Yuan Lee, Weng Chang, Ching-Hwanq Su
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Publication number: 20230061018Abstract: A method includes providing a structure having a first channel member and a second channel member over a substrate. The first channel member is located in a first region of the structure and the second channel member is located in a second region of the structure. The method also includes forming a first oxide layer over the first channel member and a second oxide layer over the second channel member, forming a first dielectric layer over the first oxide layer and a second dielectric layer over the second oxide layer, and forming a capping layer over the second dielectric layer but not over the first dielectric layer. The method further includes performing an annealing process to increase a thickness of the second oxide layer under the capping layer.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Inventors: Chih-Wei Lee, Wen-Hung Huang, Kuo-Feng Yu, Jian-Hao Chen, Hsueh-Ju Chen, Zoe Chen
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Patent number: 11502080Abstract: In an embodiment, a method includes: forming a gate dielectric layer on an interface layer; forming a doping layer on the gate dielectric layer, the doping layer including a dipole-inducing element; annealing the doping layer to drive the dipole-inducing element through the gate dielectric layer to a first side of the gate dielectric layer adjacent the interface layer; removing the doping layer; forming a sacrificial layer on the gate dielectric layer, a material of the sacrificial layer reacting with residual dipole-inducing elements at a second side of the gate dielectric layer adjacent the sacrificial layer; removing the sacrificial layer; forming a capping layer on the gate dielectric layer; and forming a gate electrode layer on the capping layer.Type: GrantFiled: December 14, 2020Date of Patent: November 15, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Yen Tsai, Ming-Chi Huang, Zoe Chen, Wei-Chin Lee, Cheng-Lung Hung, Da-Yuan Lee, Weng Chang, Ching-Hwanq Su
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Patent number: 11121041Abstract: Generally, the present disclosure provides example embodiments relating to tuning threshold voltages in transistor devices and the transistor devices formed thereby. Various examples implementing various mechanisms for tuning threshold voltages are described. In an example method, a gate dielectric layer is deposited over an active area in a device region of a substrate. A dipole layer is deposited over the gate dielectric layer in the device region. A dipole dopant species is diffused from the dipole layer into the gate dielectric layer in the device region.Type: GrantFiled: November 15, 2019Date of Patent: September 14, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Zoe Chen, Ching-Hwanq Su, Cheng-Lung Hung, Cheng-Yen Tsai, Da-Yuan Lee, Hsin-Yi Lee, Weng Chang, Wei-Chin Lee
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Publication number: 20210134799Abstract: In an embodiment, a method includes: forming a gate dielectric layer on an interface layer; forming a doping layer on the gate dielectric layer, the doping layer including a dipole-inducing element; annealing the doping layer to drive the dipole-inducing element through the gate dielectric layer to a first side of the gate dielectric layer adjacent the interface layer; removing the doping layer; forming a sacrificial layer on the gate dielectric layer, a material of the sacrificial layer reacting with residual dipole-inducing elements at a second side of the gate dielectric layer adjacent the sacrificial layer; removing the sacrificial layer; forming a capping layer on the gate dielectric layer; and forming a gate electrode layer on the capping layer.Type: ApplicationFiled: December 14, 2020Publication date: May 6, 2021Inventors: Cheng-Yen Tsai, Ming-Chi Huang, Zoe Chen, Wei-Chin Lee, Cheng-Lung Hung, Da-Yuan Lee, Weng Chang, Ching-Hwanq Su
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Patent number: 10868013Abstract: In an embodiment, a method includes: forming a gate dielectric layer on an interface layer; forming a doping layer on the gate dielectric layer, the doping layer including a dipole-inducing element; annealing the doping layer to drive the dipole-inducing element through the gate dielectric layer to a first side of the gate dielectric layer adjacent the interface layer; removing the doping layer; forming a sacrificial layer on the gate dielectric layer, a material of the sacrificial layer reacting with residual dipole-inducing elements at a second side of the gate dielectric layer adjacent the sacrificial layer; removing the sacrificial layer; forming a capping layer on the gate dielectric layer; and forming a gate electrode layer on the capping layer.Type: GrantFiled: December 16, 2019Date of Patent: December 15, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Yen Tsai, Ming-Chi Huang, Zoe Chen, Wei-Chin Lee, Cheng-Lung Hung, Da-Yuan Lee, Weng Chang, Ching-Hwanq Su
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Publication number: 20200119019Abstract: In an embodiment, a method includes: forming a gate dielectric layer on an interface layer; forming a doping layer on the gate dielectric layer, the doping layer including a dipole-inducing element; annealing the doping layer to drive the dipole-inducing element through the gate dielectric layer to a first side of the gate dielectric layer adjacent the interface layer; removing the doping layer; forming a sacrificial layer on the gate dielectric layer, a material of the sacrificial layer reacting with residual dipole-inducing elements at a second side of the gate dielectric layer adjacent the sacrificial layer; removing the sacrificial layer; forming a capping layer on the gate dielectric layer; and forming a gate electrode layer on the capping layer.Type: ApplicationFiled: December 16, 2019Publication date: April 16, 2020Inventors: Cheng-Yen Tsai, Ming-Chi Huang, Zoe Chen, Wei-Chin Lee, Cheng-Lung Hung, Da-Yuan Lee, Weng Chang, Ching-Hwanq Su
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Publication number: 20200083114Abstract: Generally, the present disclosure provides example embodiments relating to tuning threshold voltages in transistor devices and the transistor devices formed thereby. Various examples implementing various mechanisms for tuning threshold voltages are described. In an example method, a gate dielectric layer is deposited over an active area in a device region of a substrate. A dipole layer is deposited over the gate dielectric layer in the device region. A dipole dopant species is diffused from the dipole layer into the gate dielectric layer in the device region.Type: ApplicationFiled: November 15, 2019Publication date: March 12, 2020Inventors: Zoe Chen, Ching-Hwanq Su, Cheng-Lung Hung, Cheng-Yen Tsai, Da-Yuan Lee, Hsin-Yi Lee, Weng Chang, Wei-Chin Lee
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Patent number: 10510621Abstract: Generally, the present disclosure provides example embodiments relating to tuning threshold voltages in transistor devices and the transistor devices formed thereby. Various examples implementing various mechanisms for tuning threshold voltages are described. In an example method, a gate dielectric layer is deposited over an active area in a device region of a substrate. A dipole layer is deposited over the gate dielectric layer in the device region. A dipole dopant species is diffused from the dipole layer into the gate dielectric layer in the device region.Type: GrantFiled: April 13, 2018Date of Patent: December 17, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Zoe Chen, Ching-Hwanq Su, Cheng-Lung Hung, Cheng-Yen Tsai, Da-Yuan Lee, Hsin-Yi Lee, Weng Chang, Wei-Chin Lee
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Patent number: 10510756Abstract: In an embodiment, a method includes: forming a gate dielectric layer on an interface layer; forming a doping layer on the gate dielectric layer, the doping layer including a dipole-inducing element; annealing the doping layer to drive the dipole-inducing element through the gate dielectric layer to a first side of the gate dielectric layer adjacent the interface layer; removing the doping layer; forming a sacrificial layer on the gate dielectric layer, a material of the sacrificial layer reacting with residual dipole-inducing elements at a second side of the gate dielectric layer adjacent the sacrificial layer; removing the sacrificial layer; forming a capping layer on the gate dielectric layer; and forming a gate electrode layer on the capping layer.Type: GrantFiled: May 24, 2019Date of Patent: December 17, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Yen Tsai, Ming-Chi Huang, Zoe Chen, Wei-Chin Lee, Cheng-Lung Hung, Da-Yuan Lee, Weng Chang, Ching-Hwanq Su
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Publication number: 20190318967Abstract: Generally, the present disclosure provides example embodiments relating to tuning threshold voltages in transistor devices and the transistor devices formed thereby. Various examples implementing various mechanisms for tuning threshold voltages are described. In an example method, a gate dielectric layer is deposited over an active area in a device region of a substrate. A dipole layer is deposited over the gate dielectric layer in the device region. A dipole dopant species is diffused from the dipole layer into the gate dielectric layer in the device region.Type: ApplicationFiled: April 13, 2018Publication date: October 17, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Zoe Chen, Ching-Hwanq Su, Cheng-Lung Hung, Cheng-Yen Tsai, Da-Yuan Lee, Hsin-Yi Lee, Weng Chang, Wei-Chin Lee
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Patent number: 10304835Abstract: In an embodiment, a method includes: forming a gate dielectric layer on an interface layer; forming a doping layer on the gate dielectric layer, the doping layer including a dipole-inducing element; annealing the doping layer to drive the dipole-inducing element through the gate dielectric layer to a first side of the gate dielectric layer adjacent the interface layer; removing the doping layer; forming a sacrificial layer on the gate dielectric layer, a material of the sacrificial layer reacting with residual dipole-inducing elements at a second side of the gate dielectric layer adjacent the sacrificial layer; removing the sacrificial layer; forming a capping layer on the gate dielectric layer; and forming a gate electrode layer on the capping layer.Type: GrantFiled: August 15, 2018Date of Patent: May 28, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Yen Tsai, Ming-Chi Huang, Zoe Chen, Wei-Chin Lee, Cheng-Lung Hung, Da-Yuan Lee, Weng Chang, Ching-Hwanq Su
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Patent number: 6331438Abstract: Optical sensor, probe and array devices for detecting chemical biological, and physical analytes. The devices include an analyte-sensitive layer optically coupled to a thin film electroluminescent layer which activates the analyte-sensitive layer to provide an optical response. The optical response varies depending upon the presence of an analyte and is detected by a photodetector and analyzed to determine the properties of the analyte.Type: GrantFiled: November 24, 1999Date of Patent: December 18, 2001Assignees: Iowa State University Research Foundation, Inc., The Regents of the University of MichiganInventors: Jonathan W. Aylott, Zoe Chen-Esterlit, Jon H. Friedl, Raoul Kopelman, Vadim N. Savvateev, Joseph Shinar