Patents by Inventor Zohra Chahra

Zohra Chahra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Planarization of a heteroepitaxial layer
    Patent number: 7718534
    Abstract: A method of planarization of a surface of a heteroepitaxial layer by chemical-mechanical polishing the disturbed surface of the heteroepitaxial layer with a polishing pad having a compressibility greater than 2% and less than 15% and a slurry comprising at least 20% of silica particles having an average diameter between about 70 and about 100 nm. This method allows to reach high polishing rates appropriated for eliminating surface defects on heteroepitaxial layers, such as crosshatch patterns, and to achieve, in the same time, a final polish that is desirable to facilitate further operations.
    Type: Grant
    Filed: December 7, 2006
    Date of Patent: May 18, 2010
    Assignee: S.O.I.Tec Silicon on Insulator Technologies
    Inventors: Muriel Martinez, Frédéric Metral, Patrick Reynaud, Zohra Chahra
  • Relaxation of layers
    Patent number: 7452792
    Abstract: The invention relates to a method of forming a layer of elastically unstrained crystalline material intended for electronics, optics, or optronics applications, wherein the method is carried out using a structure that includes a first crystalline layer which is elastically strained under tension (or respectively in compression) and a second crystalline layer which is elastically strained in compression (or respectively under tension), with the second layer being adjacent to the first layer.
    Type: Grant
    Filed: January 19, 2006
    Date of Patent: November 18, 2008
    Assignee: S.O.I.Tec Silicon on Insulator Technologies
    Inventors: Nicolas Daval, Zohra Chahra, Romain Larderet
  • Relaxation of layers
    Publication number: 20070099399
    Abstract: The invention relates to a method of forming a layer of elastically unstrained crystalline material intended for electronics, optics, or optronics applications, wherein the method is carried out using a structure that includes a first crystalline layer which is elastically strained under tension (or respectively in compression) and a second crystalline layer which is elastically strained in compression (or respectively under tension), with the second layer being adjacent to the first layer.
    Type: Application
    Filed: January 19, 2006
    Publication date: May 3, 2007
    Inventors: Nicolas Daval, Zohra Chahra, Romain Larderet
  • PLANARIZATION OF A HETEROEPITAXIAL LAYER
    Publication number: 20070087570
    Abstract: A method of planarization of a surface of a heteroepitaxial layer by chemical-mechanical polishing the disturbed surface of the heteroepitaxial layer with a polishing pad having a compressibility greater than 2% and less than 15% and a slurry comprising at least 20% of silica particles having an average diameter between about 70 and about 100 nm. This method allows to reach high polishing rates appropriated for eliminating surface defects on heteroepitaxial layers, such as crosshatch patterns, and to achieve, in the same time, a final polish that is desirable to facilitate further operations.
    Type: Application
    Filed: December 7, 2006
    Publication date: April 19, 2007
    Inventors: Muriel Martinez, Frederic Metral, Patrick Reynaud, Zohra Chahra