Patents by Inventor Zoltan RANDLISEK

Zoltan RANDLISEK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240377870
    Abstract: Reset output with open drain configuration for functional safety (FUSA) applications. Example embodiments include methods of operating an output of an integrated circuit (IC) including determining an error condition in the IC; generating a reset signal based on the determining the error condition in the IC; selectively conducting, by a field-effect transistor (FET), a first current between an output terminal and a ground terminal of the IC to drive the output terminal to a low voltage state, and thereby signaling the error condition in the IC; conducting a second current between a signal terminal of the IC and a gate of the FET to drive the FET to a conductive state; and selectively driving, in response to the reset signal, the FET to a non-conductive state.
    Type: Application
    Filed: May 10, 2023
    Publication date: November 14, 2024
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Philippe QUARMEAU, Rastislav KOLENO, Zoltan RANDLISEK, Dieter Jozef JOOS
  • Patent number: 11287840
    Abstract: Voltage reference with temperature compensation. At least one example embodiment is a method of producing a compensate voltage reference, the method comprising: driving a reference current through a reference current path of a current mirror, and driving a mirror current through a mirror current path of the current mirror; driving the reference current through a first reference transistor having a control input, and driving the mirror current though a second reference transistor having a control input; equalizing the reference current flow through the first reference transistor to the mirror current flow through the second reference transistor by adjusting a control voltage on the control inputs of the first and second reference transistors; producing a reference voltage proportional to the control voltage; and compensating the reference voltage for temperature effects by adjusting a mirror ratio of the current mirror.
    Type: Grant
    Filed: November 17, 2020
    Date of Patent: March 29, 2022
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventor: Zoltan Randlisek
  • Publication number: 20220050488
    Abstract: Voltage reference with temperature compensation. At least one example embodiment is a method of producing a compensate voltage reference, the method comprising: driving a reference current through a reference current path of a current mirror, and driving a mirror current through a mirror current path of the current mirror; driving the reference current through a first reference transistor having a control input, and driving the mirror current though a second reference transistor having a control input; equalizing the reference current flow through the first reference transistor to the mirror current flow through the second reference transistor by adjusting a control voltage on the control inputs of the first and second reference transistors; producing a reference voltage proportional to the control voltage; and compensating the reference voltage for temperature effects by adjusting a mirror ratio of the current mirror.
    Type: Application
    Filed: November 17, 2020
    Publication date: February 17, 2022
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventor: Zoltan RANDLISEK