Abstract: The present disclosure relates to an optical filter and a method of producing the same. In the producing method, a thermal evaporation deposition process of a sacrificial layer, and depositions process of a base layer and a dielectric stack layer are sequentially performed on a substrate having a trench with a specific width, so that the base layer and the dielectric stack layer extend outward to form a solidified structure with a specific length. Next, a fixed layer is affixed to the dielectric stack layer, and the sacrificial layer is removed using a solvent to remove the substrate. As such, structural strength and flatness of the produced optical filter are enhanced, and a volume thereof is reduced, such that the optical filter can be applied to automated processes of miniaturized elements.

Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: A method for manufacturing a semiconductor device is provided, including forming a fin field effect transistor (FinFET) structure on a semiconductor substrate. The FinFET structure includes at least one fin, and a gate electrode structure and source/drain regions on the at least one fin. A dielectric film is formed over the at least on fin. The dielectric film is irradiated with ultra violet (UV) radiation from a single UV source.

Abstract: A method for manufacturing a semiconductor device is provided, including forming a fin field effect transistor (FinFET) structure on a semiconductor substrate. The FinFET structure includes at least one fin, and a gate electrode structure and source/drain regions on the at least one fin. A dielectric film is formed over the at least on fin. The dielectric film is irradiated with ultra violet (UV) radiation from a single UV source.

Abstract: A die-positioning device includes a roller body, a plurality of die-suction portions, and at least one gas control device. The roller body includes a plurality of chambers therein, and the chambers are separated from each other. The die-suction portions are located on the surface of the roller body in columns. The die-suction portions for each column correspond to one of the chambers, and each of the die-suction portions has a die suction region and a gas channel that passes through the die suction region. The gas control device is connected to the chambers and disposed on the roller body. The gas control device selectively sucks the air from a specific chamber, such that each of the die-suction portions on the specific chamber sucks an LED die by the corresponding gas channel.

Abstract: A die-positioning device includes a roller body, a plurality of die-suction portions, and at least one gas control device. The roller body includes a plurality of chambers therein, and the chambers are separated from each other. The die-suction portions are located on the surface of the roller body in columns. The die-suction portions for each column correspond to one of the chambers, and each of the die-suction portions has a die suction region and a gas channel that passes through the die suction region. The gas control device is connected to the chambers and disposed on the roller body. The gas control device selectively sucks the air from a specific chamber, such that each of the die-suction portions on the specific chamber sucks an LED die by the corresponding gas channel.