Patents by Inventor Zong-Jie WU

Zong-Jie WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE
    Publication number: 20230317743
    Abstract: A semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes silicon. The second semiconductor structure is embedded in the first semiconductor structure, in which the second semiconductor structure has at least one convex portion and at least one concave portion. The convex portion and the concave portion are on at least one edge of the second semiconductor structure, and a shape of the concave portion includes rectangle, trapezoid, inverted trapezoid, or parallelogram. The second semiconductor structure includes germanium, elements of group III or group V, or combinations thereof. The convex portion of the second semiconductor structure has a top surface substantially coplanar with a top surface of the first semiconductor structure.
    Type: Application
    Filed: June 5, 2023
    Publication date: October 5, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Zong-Jie WU, Chiao-Chi WANG, Chung-Chuan TSENG, Chia-Ping LAI
  • Semiconductor device and method of manufacturing the same
    Patent number: 11670650
    Abstract: A semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes silicon. The second semiconductor structure is embedded in the first semiconductor structure, in which the second semiconductor structure has at least one convex portion and at least one concave portion. The convex portion and the concave portion are on at least one edge of the second semiconductor structure, and a shape of the concave portion includes rectangle, trapezoid, inverted trapezoid, or parallelogram. The second semiconductor structure includes germanium, elements of group III or group V, or combinations thereof.
    Type: Grant
    Filed: June 5, 2020
    Date of Patent: June 6, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Zong-Jie Wu, Chiao-Chi Wang, Chung-Chuan Tseng, Chia-Ping Lai
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20210098514
    Abstract: A semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes silicon. The second semiconductor structure is embedded in the first semiconductor structure, in which the second semiconductor structure has at least one convex portion and at least one concave portion. The convex portion and the concave portion are on at least one edge of the second semiconductor structure, and a shape of the concave portion includes rectangle, trapezoid, inverted trapezoid, or parallelogram. The second semiconductor structure includes germanium, elements of group III or group V, or combinations thereof.
    Type: Application
    Filed: June 5, 2020
    Publication date: April 1, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Zong-Jie WU, Chiao-Chi WANG, Chung-Chuan TSENG, Chia-Ping LAI