Abstract: A vapor deposition apparatus includes a susceptor, a gas supply unit, a heating unit and a rotation unit. The susceptor has a first substrate-holding portion and a second substrate-holding portion. The first substrate-holding portion has a first depth, and the second substrate-holding portion has a second depth that is larger than the first depth. The gas supply unit supplies precursors to the susceptor. The heating unit is used to heat the susceptor. The rotation unit can rotate the susceptor so that the heating unit can uniformly heat the susceptor. Because the second depth is larger than the first depth, the substrate held in the second substrate-holding portion can not directly contact the susceptor with a higher temperature and thus its temperature is lower than the second substrate-holding portion, so as to maintain the uniformity of the properties of the manufactured chips.