Abstract: An input/output delay optimization method, used in an electronic system comprising a host controller and a memory device. The method comprising: switching the memory device from a first mode to a second mode a high power consumption mode of the memory device; transmitting one or more first read commands to the memory device, wherein the one or more first read commands are transmitted according to different output delay values; determining an optimized output delay value according to the response status of memory device for the one or more first read commands; transmitting one or more second read commands to the memory device, wherein the one or more second read commands are transmitted according to the optimized output delay value; receiving a known data from the memory device according to different input delay values; and determining an optimized input delay value according to the correctness of the received known data.

Abstract: An input/output delay optimization method, used in an electronic system comprising a host controller and a memory device. The method comprising: switching the memory device from a first mode to a second mode a high power consumption mode of the memory device; transmitting one or more first read commands to the memory device, wherein the one or more first read commands are transmitted according to different output delay values; determining an optimized output delay value according to the response status of memory device for the one or more first read commands; transmitting one or more second read commands to the memory device, wherein the one or more second read commands are transmitted according to the optimized output delay value; receiving a known data from the memory device according to different input delay values; and determining an optimized input delay value according to the correctness of the received known data.

Abstract: A memory comprises a memory cell, a sense amplifier, and a control unit. The memory cell stores a first bit and a second bit. The sense amplifier senses a first cell current and a second cell current corresponding to the first and the second bits respectively with a voltage applying on the memory cell. The control unit determines a digital state of the first bit by comparing a first reference current with the first cell current or by comparing a reference data with a first delta current between the first cell current and the second cell current.

Abstract: A memory comprises a memory cell, a sense amplifier, and a control unit. The memory cell stores a first bit and a second bit. The sense amplifier senses a first cell current and a second cell current corresponding to the first and the second bits respectively with a voltage applying on the memory cell. The control unit determines a digital state of the first bit by comparing a first reference current with the first cell current or by comparing a reference data with a first delta current between the first cell current and the second cell current.