Abstract: A manufacturing method of a semiconductor structure includes the following steps. A first wafer is provided. The first wafer includes a first substrate and a first device layer. A second wafer is provided. The second wafer includes a second substrate and a second device layer. The second device layer is bonded to the first device layer. An edge trimming process is performed on the first wafer and the second wafer to expose a first upper surface of the first substrate and a second upper surface of the first substrate and to form a damaged region in the first substrate below the first upper surface and the second upper surface. The second upper surface is higher than the first upper surface. A first photoresist layer is formed. The first photoresist layer is located on the second wafer and the second upper surface and exposes the first upper surface and the damaged region. The damaged region is removed by using the first photoresist layer as a mask. The first photoresist layer is removed.

Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: A semiconductor assembly and a method for manufacturing the same are provided. The semiconductor assembly includes a first substrate, a first well in the first substrate and having a first doping type, a second substrate, a second well in the second substrate and having a second doping type, a first dielectric layer between the first substrate and the second substrate, and a second dielectric layer between the first substrate and the second substrate. The first doping type is different from the second doping type. The second dielectric layer is bonded to the first dielectric layer. The first well overlaps with the second well in a vertical direction.

Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.