Patents by Inventor Zonghoon Lee

Zonghoon Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • THIN-FILM STRUCTURE, SEMICONDUCTOR ELEMENT INCLUDING THE THIN-FILM STRUCTURE, AND METHOD OF MANUFACTURING THE THIN-FILM STRUCTURE
    Publication number: 20220302319
    Abstract: Provided is a thin-film structure including a substrate, a nanocrystalline graphene layer provided on the substrate, and a two-dimensional material layer provided on the nanocrystalline graphene layer. The nucleation density of the two-dimensional material layer is 109 ea/cm2 or more according to the nanocrystalline graphene layer, and accordingly, a two-dimensional material layer having an improved uniformity may be formed and a time duration for forming the two-dimensional material layer may be greatly decreased.
    Type: Application
    Filed: October 6, 2021
    Publication date: September 22, 2022
    Applicants: Samsung Electronics Co., Ltd., UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Changseok LEE, Soonyong KWON, Junghwa KIM, Seungwoo SON, Seunguk SONG, Hyeonjin SHIN, Zonghoon LEE, Yeonchoo CHO
  • SUBSTRATE-FREE GAS-PHASE SYNTHESIS OF GRAPHENE SHEETS
    Publication number: 20100301212
    Abstract: A substrate-free gas-phase synthesis apparatus and method that is capable of rapidly and continuously producing graphene in ambient conditions without the use of graphite or substrates is provided. Graphene sheets are continuously synthesized in fractions of a second by sending an aerosol consisting of argon gas and liquid ethanol droplets into an atmospheric-pressure microwave-generated argon plasma field. The ethanol droplets are evaporated and dissociated in the plasma, forming graphene sheets that are collected. The apparatus can be scaled for the large-scale production of clean and highly ordered graphene and its many applications. The graphene that is produced is clean and highly ordered with few lattice imperfections and oxygen functionalities and therefore has improved characteristics over graphene produced by current methods in the art.
    Type: Application
    Filed: May 18, 2010
    Publication date: December 2, 2010
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Albert Dato, Michael Frenklach, Velimir Radmilovic, Zonghoon Lee
  • Nanocomposite films
    Patent number: 7758708
    Abstract: A thin-film composition of nanocrystal molybdenum in an amorphous metallic matrix may be formed by co-sputtering Mo with aluminum or nickel. NEMS cantilevers may be formed from the film. The films exhibit high nanoindentation hardness and a reduction in roughness and intrinsic stress, while maintaining resistivity in the metallic range.
    Type: Grant
    Filed: July 31, 2007
    Date of Patent: July 20, 2010
    Assignees: The Governors of the University of Alberta, The University of California
    Inventors: David Mitlin, Colin Ophus, Stephane Evoy, Velimir Radmilovic, Reza Mohammadi, Ken Westra, Nathaniel Nelson-Fitzpatrick, Zonghoon Lee
  • NANOCOMPOSITE FILMS
    Publication number: 20080171219
    Abstract: A thin-film composition of nanocrystal molybdenum in an amorphous metallic matrix may be formed by co-sputtering Mo with aluminum or nickel. NEMS cantilevers may be formed from the film. The films exhibit high nanoindentation hardness and a reduction in roughness and intrinsic stress, while maintaining resistivity in the metallic range.
    Type: Application
    Filed: July 31, 2007
    Publication date: July 17, 2008
    Applicants: THE GOVERNORS OF THE UNIVERSITY OF ALBERTA, THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: David MITLIN, Colin OPHUS, Stephane EVOY, Velimir RADMILOVIC, Reza MOHAMMADI, Ken WESTRA, Nathaniel NELSON-FITZPATRICK, Zonghoon LEE