Abstract: A method and apparatus for a heated substrate support pedestal is provided. In one embodiment, a substrate support pedestal includes a ceramic body having a top surface and a bottom surface. The substrate support pedestal has a stem coupled to the bottom surface of the ceramic body. A top electrode is disposed within the ceramic body. A conductive rod is disposed through the stem and coupled to the top electrode. A plurality of heater elements is disposed within the ceramic body below the top electrode. A ground mesh is disposed within the ceramic body, below the plurality of heater elements, and above the bottom surface of the ceramic body.

Abstract: Methods for processing a substrate, such as bevel etch processing, are provided. In one embodiment, a method includes placing a substrate on a cover plate inside of a processing chamber, where the substrate has a center and a bevel edge and contains a dielectric layer thereon, the processing chamber contains a mask disposed above the substrate and an edge ring disposed under the substrate, the edge ring has an annular body, and the cover plate is disposed on a support assembly. The method further includes heating the substrate with a heater attached to the support assembly, raising the edge ring to contact the mask, flowing a process gas containing an etchant along an outer surface of the mask and to the bevel edge, where the process gas is ignited to produce a plasma, and exposing an upper surface of the substrate at the bevel edge to the process gas.

Abstract: Implementations described herein generally relate to methods for leveling a component above a substrate. In one implementation, a test substrate is placed on a substrate support inside of a processing chamber. A component, such as a mask, is located above the substrate. The component is lowered to a position so that the component and the substrate are in contact. The component is then lifted and the particle distribution on the test substrate is reviewed. Based on the particle distribution, the component may be adjusted. A new test substrate is placed on the substrate support inside of the processing chamber, and the component is lowered to a position so that the component and the new test substrate are in contact. The particle distribution on the new test substrate is reviewed. The process may be repeated until a uniform particle distribution is shown on a test substrate.

Abstract: Methods for processing a substrate, such as bevel etch processing, are provided. In one embodiment, a method includes placing a substrate on a cover plate inside of a processing chamber, where the substrate has a center and a bevel edge and contains a dielectric layer thereon, the processing chamber contains a mask disposed above the substrate and an edge ring disposed under the substrate, the edge ring has an annular body, and the cover plate is disposed on a support assembly. The method further includes heating the substrate with a heater attached to the support assembly, raising the edge ring to contact the mask, flowing a process gas containing an etchant along an outer surface of the mask and to the bevel edge, where the process gas is ignited to produce a plasma, and exposing an upper surface of the substrate at the bevel edge to the process gas.

Abstract: Implementations described herein generally relate to methods and apparatus for processing a substrate. More particularly, implementations described herein relate to methods and an apparatus for bevel etch processing. In one embodiment, a method of cleaning a bevel edge of a semiconductor substrate is provided. The method includes placing a substrate on a cover plate inside of a processing chamber, the substrate having a deposition layer, which includes a center, and a bevel edge. A mask is placed over the substrate. The edge ring is disposed around/under the substrate. The method also includes flowing a process gas mixture adjacent the bevel edge, and flowing a purge gas through a first hole, a second hole, and a third hole of the mask in the center of the substrate adjacent a top of the substrate.

Abstract: Implementations described herein generally relate to methods and apparatus for processing a substrate. More particularly, implementations described herein relate to methods and an apparatus for bevel etch processing. In one embodiment, a method of cleaning a bevel edge of a semiconductor substrate is provided. The method includes placing a substrate on a cover plate inside of a processing chamber, the substrate having a deposition layer, which includes a center, and a bevel edge. A mask is placed over the substrate. The edge ring is disposed around/under the substrate. The method also includes flowing a process gas mixture adjacent the bevel edge, and flowing a purge gas through a first hole, a second hole, and a third hole of the mask in the center of the substrate adjacent a top of the substrate.

Abstract: Implementations described herein generally relate to methods for leveling a component above a substrate. In one implementation, a test substrate is placed on a substrate support inside of a processing chamber. A component, such as a mask, is located above the substrate. The component is lowered to a position so that the component and the substrate are in contact. The component is then lifted and the particle distribution on the test substrate is reviewed. Based on the particle distribution, the component may be adjusted. A new test substrate is placed on the substrate support inside of the processing chamber, and the component is lowered to a position so that the component and the new test substrate are in contact. The particle distribution on the new test substrate is reviewed. The process may be repeated until a uniform particle distribution is shown on a test substrate.

Abstract: A method and apparatus for a heated substrate support pedestal is provided. In one embodiment, the heated substrate support pedestal includes a body comprising a ceramic material, a plurality of heating elements encapsulated within the body A stem is coupled to a bottom surface of the body. A plurality of heater elements, a top electrode and a shield electrode are disposed within the body. The top electrode is disposed adjacent a top surface of the body, while the shield electrode is disposed adjacent the bottom surface of the body. A conductive rod is disposed through the stem and is coupled to the top electrode.