Patents by Inventor ZONGMIN TIAN
ZONGMIN TIAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10297635Abstract: A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3?), a semiconductor-layer thin film (4?) and a passivation-shielding-layer thin film (5?) successively; forming a pattern (5?) that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a?); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c?) and a drain electrode (4b?). The source electrode (4c?) and the drain electrode (4b?) are disposed on two sides of the active layer (4a?) respectively and in a same layer as the active layer (4a?).Type: GrantFiled: March 17, 2017Date of Patent: May 21, 2019Assignees: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Huichao Gao, Zongmin Tian, Peng Li
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Patent number: 10217774Abstract: The technical disclosure relates to a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a base substrate, a gate electrode, an active layer, source/drain electrodes, a pixel electrode and one or more insulating layers, wherein at least one of the insulating layers comprises a bottom insulating sub-layer and a top insulating sub-layer, the top insulating sub-layer having a hydrogen content higher than that of the bottom insulating sub-layer.Type: GrantFiled: June 16, 2017Date of Patent: February 26, 2019Assignees: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Zhenyu Xie, Shaoying Xu, Tiansheng Li, Changjiang Yan, Jing Li, Zongmin Tian
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Patent number: 10186562Abstract: A thin film transistor, a method for manufacturing the thin film transistor, an array substrate comprising the thin film transistor and an organic light emitting display panel comprising the thin film transistor are provided. The thin film transistor at least comprising an active layer made of carbon nanotube material with semiconductor properties or graphene with semiconductor properties; further comprising a first conductive layer and a second conductive layer respectively located on upper and lower sides of the active layer and in contact with the active layer, the first conductive layer and the second conductive layer formed a secondary electron emitting layer with electron multiplication function. The thin film transistor is advantageous in its simple structure and simple manufacturing process.Type: GrantFiled: May 29, 2014Date of Patent: January 22, 2019Assignees: BOE Technology Group Co., Ltd., Beijing BOE Optoelectronics Technology Co., Ltd.Inventors: Zongmin Tian, Zhenyu Xie, Xu Chen
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Publication number: 20180170090Abstract: The present disclosure discloses a transfer printing plate assembly, which includes a transfer printing plate for transfer printing of aligning agent, and a printing cylinder for fixing the transfer printing plate. The transfer printing plate includes a first side, a second side opposite to the first side, and a first connection element at each of the first side and the second side. The printing cylinder includes a second connection element for engaging with the first connection element to prevent the transfer printing plate from shrinking in an axial direction of the printing cylinder when the transfer printing plate is fixed to the printing cylinder.Type: ApplicationFiled: May 10, 2017Publication date: June 21, 2018Inventors: Zongmin Tian, Xiangquan Zhai, Wenyu Zhang
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Publication number: 20170287950Abstract: The technical disclosure relates to a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a base substrate, a gate electrode, an active layer, source/drain electrodes, a pixel electrode and one or more insulating layers, wherein at least one of the insulating layers comprises a bottom insulating sub-layer and a top insulating sub-layer, the top insulating sub-layer having a hydrogen content higher than that of the bottom insulating sub-layer.Type: ApplicationFiled: June 16, 2017Publication date: October 5, 2017Inventors: Zhenyu XIE, Shaoying XU, Tiansheng LI, Changjiang YAN, Jing LI, Zongmin TIAN
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Publication number: 20170186809Abstract: A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3?), a semiconductor-layer thin film (4?) and a passivation-shielding-layer thin film (5?) successively; forming a pattern (5?) that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a?); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c?) and a drain electrode (4b?). The source electrode (4c?) and the drain electrode (4b?) are disposed on two sides of the active layer (4a?) respectively and in a same layer as the active layer (4a?).Type: ApplicationFiled: March 17, 2017Publication date: June 29, 2017Inventors: Huichao GAO, Zongmin TIAN, Peng LI
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Patent number: 9647019Abstract: A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3?), a semiconductor-layer thin film (4?) and a passivation-shielding-layer thin film (5?) successively; forming a pattern (5?) that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a?); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c?) and a drain electrode (4b?). The source electrode (4c?) and the drain electrode (4b?) are disposed on two sides of the active layer (4a?) respectively and in a same layer as the active layer (4a?).Type: GrantFiled: July 17, 2014Date of Patent: May 9, 2017Assignees: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Huichao Gao, Zongmin Tian, Peng Li
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Patent number: 9620651Abstract: A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor includes a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode provided on a base substrate, and along a direction perpendicular to the base substrate, the source electrode and the drain electrode are respectively provided at opposite both sides of the active layer, and the source electrode and the drain electrode contacts the active layer.Type: GrantFiled: December 4, 2013Date of Patent: April 11, 2017Assignees: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Wenyu Zhang, Zongmin Tian, Jing Li
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Patent number: 9583508Abstract: The present invention discloses an array substrate, a preparation method for the array substrate, and a display device, wherein the array substrate comprises a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode, and a pixel electrode arranged on a substrate, the active layer includes an electric conduction area, a coverage area covered by the source electrode and the drain electrode, and an exposure area surrounding the coverage area, and the pixel electrode is lapped on the upper surfaces of the drain electrode, the exposure area of the active layer, and the gate insulation layer. According to the present invention, the pixel electrode breaks in the area, with the large gradient angle, of the drain electrode caused by slip-down due to gravity can be avoided, and the lap joint for the pixel electrode and the drain electrode is effectively facilitated.Type: GrantFiled: September 29, 2014Date of Patent: February 28, 2017Assignees: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE OPTOELECTRONICS CO., LTD.Inventors: Xiaohui Jiang, Jian Guo, Jiaxiang Zhang, Zongmin Tian
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Patent number: 9490366Abstract: A thin film transistor, an amorphous silicon flat detection substrate and a manufacturing method are provided. The material for a source electrode and a drain electrode of the thin film transistor is a conductor converted from the material for the amorphous metal oxide active layer by depositing an insulating substance containing hydrogen ions not less than a preset value, which reduces the valence band level difference between the source and the drain electrodes and the active layer, realizes good lattice matching and improves electricity characteristics of the thin film transistor.Type: GrantFiled: June 20, 2013Date of Patent: November 8, 2016Assignees: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Changjiang Yan, Jun Long, Zongmin Tian, Zhenyu Xie, Xu Chen
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Publication number: 20160225914Abstract: A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor includes a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode provided on a base substrate, and along a direction perpendicular to the base substrate, the source electrode and the drain electrode are respectively provided at opposite both sides of the active layer, and the source electrode and the drain electrode contacts the active layer.Type: ApplicationFiled: December 4, 2013Publication date: August 4, 2016Inventors: Wenyu ZHANG, Zongmin TIAN, Jing LI
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Publication number: 20160141342Abstract: An array substrate and a manufacturing method thereof, and a display apparatus are provided. The array substrate may include a base substrate, a scan line, a data line arranged to cross each other on the base substrate, pixel units arranged in a matrix and defined by the scan lines and data lines, wherein a thin film transistor, a pixel electrode and a light emitting structure are disposed in the pixel unit, the pixel electrode is disposed above the layer where the thin film transistor is located, the region covered by the pixel electrode includes a region over the thin film transistor; the light emitting structure is disposed above the layer where the thin film transistor is located, and its covered region corresponds to the region covered by the pixel electrode.Type: ApplicationFiled: December 12, 2013Publication date: May 19, 2016Inventors: Jinzhong ZHANG, Zongmin TIAN
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Publication number: 20160043152Abstract: A thin film transistor, a method for manufacturing the thin film transistor, an array substrate comprising the thin film transistor and an organic light emitting display panel comprising the thin film transistor are provided. The thin film transistor at least comprising an active layer made of carbon nanotube material with semiconductor properties or graphene with semiconductor properties; further comprising a first conductive layer and a second conductive layer respectively located on upper and lower sides of the active layer and in contact with the active layer, the first conductive layer and the second conductive layer formed a secondary electron emitting layer with electron multiplication function. The thin film transistor is advantageous in its simple structure and simple manufacturing process.Type: ApplicationFiled: May 29, 2014Publication date: February 11, 2016Inventors: Zongmin TIAN, Zhenyu XIE, Xu CHEN
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Publication number: 20150340511Abstract: A thin film transistor, an amorphous silicon flat detection substrate and a manufacturing method are provided. The material for a source electrode and a drain electrode of the thin film transistor is a conductor converted from the material for the amorphous metal oxide active layer by depositing an insulating substance containing hydrogen ions not less than a preset value, which reduces the valence band level difference between the source and the drain electrodes and the active layer, realizes good lattice matching and improves electricity characteristics of the thin film transistor.Type: ApplicationFiled: June 20, 2013Publication date: November 26, 2015Inventors: Changjiang YAN, Jun LONG, Zongmin TIAN, Zhenyu XIE, Xu CHEN
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Publication number: 20150270299Abstract: A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3?), a semiconductor-layer thin film (4?) and a passivation-shielding-layer thin film (5?) successively; forming a pattern (5?) that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a?); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c?) and a drain electrode (4b?). The source electrode (4c?) and the drain electrode (4b?) are disposed on two sides of the active layer (4a?) respectively and in a same layer as the active layer (4a?).Type: ApplicationFiled: July 17, 2014Publication date: September 24, 2015Inventors: Huichao Gao, Zongmin Tian, Peng Li
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Publication number: 20150236053Abstract: The present invention discloses an array substrate, a preparation method for the array substrate, and a display device, wherein the array substrate comprises a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode, and a pixel electrode arranged on a substrate, the active layer includes an electric conduction area, a coverage area covered by the source electrode and the drain electrode, and an exposure area surrounding the coverage area, and the pixel electrode is lapped on the upper surfaces of the drain electrode, the exposure area of the active layer, and the gate insulation layer. According to the present invention, the pixel electrode breaks in the area, with the large gradient angle, of the drain electrode caused by slip-down due to gravity can be avoided, and the lap joint for the pixel electrode and the drain electrode is effectively facilitated.Type: ApplicationFiled: September 29, 2014Publication date: August 20, 2015Inventors: Xiaohui JIANG, Jian GUO, Jiaxiang ZHANG, Zongmin TIAN
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Publication number: 20140175430Abstract: The technical disclosure relates to a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a base substrate, a gate electrode, an active layer, source/drain electrodes, a pixel electrode and one or more insulating layers, wherein at least one of the insulating layers comprises a bottom insulating sub-layer and a top insulating sub-layer, the top insulating sub-layer having a hydrogen content higher than that of the bottom insulating sub-layer.Type: ApplicationFiled: November 22, 2013Publication date: June 26, 2014Applicant: BEIJING BOE OPTOELECRONICS TECHNOLOGY CO., LTD.Inventors: ZHENYU XIE, SHAOYING XU, TIANSHENG LI, CHANGJIANG YAN, JING LI, ZONGMIN TIAN