Abstract: An article comprising a ferroelectric material in its ferroelectric phase, wherein the article is configured to enable low-loss propagation of signals with ultra-low dielectric loss at one or more select frequencies.

Abstract: The present disclosure is directed to using MXene compositions as templates for the deposition of oriented perovskite films, and compositions derived from such methods. Certain specific embodiments include methods preparing an oriented perovskite, perovskite-type, or perovskite-like film, the methods comprising: (a) depositing at least one perovskite, perovskite-type, or perovskite-like composition or precursor composition using chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD) onto a film or layer of a MXene composition supported on a substrate to form a layered composition or precursor composition; and either (b) (1) heat treating or annealing the layered precursor composition to form a layered perovskite-type structure comprising at least one oriented perovskite, perovskite-type, or perovskite-like composition; or (2) annealing the layered composition; or (3) both (1) and (2).

Abstract: The present disclosure describes a strained dielectric material comprising at least one type of component containing a domain wall variant pattern, or superdomain structure, that is in phase-co-existence with, or in close phase proximity to, a paraelectric state achieved at zero electric field or over a finite range of non-zero electric field, wherein the at least one type of component comprises one or more of an in-plane sub-domain polarization component, a plane-normal sub-domain polarization component, or a solid solution of a ferroelectric.

Abstract: An article comprising a ferroelectric material in its ferroelectric phase, wherein the article is configured to enable low-loss propagation of signals with ultra-low dielectric loss at one or more select frequencies.

Abstract: The present disclosure is directed to using MXene compositions as templates for the deposition of oriented perovskite films, and compositions derived from such methods. Certain specific embodiments include methods preparing an oriented perovskite, perovskite-type, or perovskite-like film, the methods comprising: (a) depositing at least one perovskite, perovskite-type, or perovskite-like composition or precursor composition using chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD) onto a film or layer of a MXene composition supported on a substrate to form a layered composition or precursor composition; and either (b) (1) heat treating or annealing the layered precursor composition to form a layered perovskite-type structure comprising at least one oriented perovskite, perovskite-type, or perovskite-like composition; or (2) annealing the layered composition; or (3) both (1) and (2).

Abstract: Coupling of switchable ferroelectric polarization with the carrier transport in an adjacent semiconductor enables a robust, non-volatile manipulation of the conductance in a host of low-dimensional systems, including the two-dimensional electron liquid that forms at the LaAlO3—SrTiO3 interface. However, the strength of the gate-channel coupling is relatively weak, limited in part by the electrostatic potential difference across a ferroelectric gate. Compositionally grading of PbZr1-xTixO3 ferroelectric gates enables a more than twenty-five-fold increase in the LAO/STO channel conductance on/off ratios. Incorporation of polarization gradients in ferroelectric gates can enable significantly enhanced performance of ferroelectric non-volatile memories.

Abstract: The present disclosure pertains to the use of intense, narrow-linewidth surface, chemically-switchable ultraviolet photoluminescence from radiative recombination of the two-dimensional electron liquid with photo-excited holes in complex oxide heterostructures, such as LaAlO3/SrTiO3 (LAO/STO). Such photoluminescence from the interface between the upper and lower layers can be suppressed and restored reversibly under oxidizing and reducing conditions, respectively, as induced by chemisorption and reversal of chemisorption on the exposed surface of the heterostructure's upper member. Making use of this chemically-switchable ultraviolet photoluminescence, the present disclosure provides, inter alia, systems for detection of a chemical species, methods for determining the absence or presence of a chemical species in a sample, optoelectronic devices, and methods for producing optoelectronic devices.

Abstract: Coupling of switchable ferroelectric polarization with the carrier transport in an adjacent semiconductor enables a robust, non-volatile manipulation of the conductance in a host of low-dimensional systems, including the two-dimensional electron liquid that forms at the LaAlO3-SrTiO3 interface. However, the strength of the gate-channel coupling is relatively weak, limited in part by the electrostatic potential difference across a ferroelectric gate. Compositionally grading of PbZr1-xTixO3 ferroelectric gates enables a more than twenty-five-fold increase in the LAO/STO channel conductance on/off ratios. Incorporation of polarization gradients in ferroelectric gates can enable significantly enhanced performance of ferroelectric non-volatile memories.