Patents by Inventor Zongshuai Yan

Zongshuai Yan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wear leveling and access method and device for non-volatile memory, and storage medium
    Patent number: 11320989
    Abstract: A wear leveling and access method and device for a non-volatile memory, and a storage medium. The method includes: logically dividing a non-volatile memory into physical units of p levels, the non-volatile memory including a plurality of physical units of the first level, each physical unit of the p?1-th level including a plurality of physical units of the p-th level, and p being a positive integer greater than one (S110); when a time period corresponding to the physical units of the q-th level arrives, replacing the data of each of the physical units of the q-th level with other physical units of the q-th level, q being any positive integer from one to p (S120).
    Type: Grant
    Filed: April 1, 2019
    Date of Patent: May 3, 2022
    Assignee: ZTE CORPORATION
    Inventors: Hongzhang Yang, Yaofeng Tu, Guihai Chen, Bin Guo, Yinjun Han, Zongshuai Yan, Zhenjiang Huang, Hong Gao
  • WEAR LEVELING AND ACCESS METHOD AND DEVICE FOR NON-VOLATILE MEMORY, AND STORAGE MEDIUM
    Publication number: 20210271398
    Abstract: A wear leveling and access method and device for a non-volatile memory, and a storage medium. The method includes: logically dividing a non-volatile memory into physical units of p levels, the non-volatile memory including a plurality of physical units of the first level, each physical unit of the p?1-th level including a plurality of physical units of the p-th level, and p being a positive integer greater than one (S110); when a time period corresponding to the physical units of the q-th level arrives, replacing the data of each of the physical units of the q-th level with other physical units of the q-th level, q being any positive integer from one to p (S120).
    Type: Application
    Filed: April 1, 2019
    Publication date: September 2, 2021
    Inventors: Hongzhang Yang, Yaofeng Tu, Guihai Chen, Bin Guo, Yinjun Han, Zongshuai Yan, Zhenjiang Huang, Hong Gao