Patents by Inventor Zong-Xiang Xu
Zong-Xiang Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9711738Abstract: The design and synthesis of six nickel charge transfer (CT) complexes are described herein. The six nickel CT complexes have a nickel center, two organic ligands coordinated with the nickel center to form a dianionic square planar supramolecule and an organic counter-cation as represented by The ligands and counter-cations are selected to optimize properties, such as molecular alignment, film morphology, and molecular packaging. Described herein, the ligands can be 2,3-pyrazinedithiol (L1), 1,2-benzenedithol (L2) or 2,3-quinoxalinedithol (L3) and the counter-cations can be diquat (2,2?-ebpy) or methyl viologen (4,4?-mbpy). The six nickel CT complexes can also be utilized semiconductor devices, such as thin film transistors or inverters. Processes are also provided for the fabrication of semiconductors devices. The processes can include fabricating a substrate with a bilayer octadecylphosphonic acid (ODPA)/Al2O3 dielectric and applying one of the six nickel charge transfer (CT) complexes to the substrate.Type: GrantFiled: March 3, 2015Date of Patent: July 18, 2017Assignee: CITY UNIVERSITY OF HONG KONGInventors: Vellaisamy A. L. Roy, Zong-Xiang Xu, Paul Kim Ho Chu, Tat Kun Kwok
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Patent number: 9202924Abstract: A semiconductor device comprising a gate electrode; an insulating layer in electrical connection with the gate electrode; a source electrode and a drain electrode; and a semiconducting channel layer configured to selectively allow electrically connection between the source electrode and the drain electrode based on the voltage on the gate electrode; wherein the semiconducting channel layer comprises metal nanoparticles; and the semiconducting channel layer is in contact with the source electrode, the drain electrode and the insulating layer. A method of manufacturing the semiconductor device of the present invention is also disclosed.Type: GrantFiled: January 6, 2014Date of Patent: December 1, 2015Assignee: NANO AND ADVANCED MATERIALS INSTITUTE LIMITEDInventors: Arul Lenus Roy Vellaisamy, Ye Zhou, Su Ting Han, Zong Xiang Xu
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Patent number: 9157886Abstract: The design and fabrication of ultrathin poly-3-hexyl thiophene (P3HT) film based amine sensors are described herein. Ultrathin P3HT monolayer films can be built on a patterned flexible n-octadecylphosphonic acid (ODPA)/Al2O3/PET substrate, forming a flexible polymer thin film transistor according to a solution process. The mechanism of the sensor is based on the interaction of amine molecules with the surface of the P3HT monolayer. The interaction of amine molecules with the surface of the P3HT monolayer can affect the current density of the PTFT, and the change in current density can indicate the presence of amine molecules in the surroundings. The amine sensors described herein can easily detect amine molecules in a parts per billion (ppb) range. The amine sensors can be utilized, for example, as disposable sensors within food packaging to ensure the safety of the packaged food.Type: GrantFiled: June 3, 2011Date of Patent: October 13, 2015Assignee: CITY UNIVERSITY OF HONG KONGInventors: Vellaisamy A. L. Roy, Zong-Xiang Xu
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Publication number: 20150179957Abstract: The design and synthesis of six nickel charge transfer (CT) complexes are described herein. The six nickel CT complexes have a nickel center, two organic ligands coordinated with the nickel center to form a dianionic square planar supramolecule and an organic counter-cation as represented by The ligands and counter-cations are selected to optimize properties, such as molecular alignment, film morphology, and molecular packaging. Described herein, the ligands can be 2,3-pyrazinedithiol (L1), 1,2-benzenedithol (L2) or 2,3-quinoxalinedithol (L3) and the counter-cations can be diquat (2,2?-ebpy) or methyl viologen (4,4?-mbpy). The six nickel CT complexes can also be utilized semiconductor devices, such as thin film transistors or inverters. Processes are also provided for the fabrication of semiconductors devices. The processes can include fabricating a substrate with a bilayer octadecylphosphonic acid (ODPA)/Al2O3 dielectric and applying one of the six nickel charge transfer (CT) complexes to the substrate.Type: ApplicationFiled: March 3, 2015Publication date: June 25, 2015Inventors: Vellaisamy A. L. Roy, Zong-Xiang Xu, Paul Kim Ho Chu, Tat Kun Kwok
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Patent number: 8981096Abstract: The design and synthesis of six nickel charge transfer (CT) complexes are described herein. The six nickel CT complexes have a nickel center, two organic ligands coordinated with the nickel center to form a dianionic square planar supramolecule and an organic counter-cation as represented by The ligands and counter-cations are selected to optimize properties, such as molecular alignment, film morphology, and molecular packaging. Described herein, the ligands can be 2,3-pyrazinedithiol (L1), 1,2-benzenedithol (L2) or 2,3-quinoxalinedithol (L3) and the counter-cations can be diquat (2,2?-ebpy) or methyl viologen (4,4?-mbpy). The six nickel CT complexes can also be utilized semiconductor devices, such as thin film transistors or inverters. Processes are also provided for the fabrication of semiconductors devices. The processes can include fabricating a substrate with a bilayer octadecylphosphonic acid (ODPA)/Al2O3 dielectric and applying one of the six nickel charge transfer (CT) complexes to the substrate.Type: GrantFiled: April 29, 2011Date of Patent: March 17, 2015Assignee: City University of Hong KongInventors: Vellaisamy A. L. Roy, Zong-Xiang Xu, Paul Kim Ho Chu, Tat Kun Kwok
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Publication number: 20140197405Abstract: A semiconductor device comprising a gate electrode; an insulating layer in electrical connection with the gate electrode; a source electrode and a drain electrode; and a semiconducting channel layer configured to selectively allow electrically connection between the source electrode and the drain electrode based on the voltage on the gate electrode; wherein the semiconducting channel layer comprises metal nanoparticles; and the semiconducting channel layer is in contact with the source electrode, the drain electrode and the insulating layer. A method of manufacturing the semiconductor device of the present invention is also disclosed.Type: ApplicationFiled: January 6, 2014Publication date: July 17, 2014Applicant: Nano and Advanced Materials Institute LimitedInventors: Arul Lenus Roy Vellaisamy, Ye Zhou, Su Ting Han, Zong Xiang Xu
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Publication number: 20120304741Abstract: The design and fabrication of ultrathin poly-3-hexyl thiophene (P3HT) film based amine sensors are described herein. Ultrathin P3HT monolayer films can be built on a patterned flexible n-octadecylphosphonic acid (ODPA)/Al2O3/PET substrate, forming a flexible polymer thin film transistor according to a solution process. The mechanism of the sensor is based on the interaction of amine molecules with the surface of the P3HT monolayer. The interaction of amine molecules with the surface of the P3HT monolayer can affect the current density of the PTFT, and the change in current density can indicate the presence of amine molecules in the surroundings. The amine sensors described herein can easily detect amine molecules in a parts per billion (ppb) range. The amine sensors can be utilized, for example, as disposable sensors within food packaging to ensure the safety of the packaged food.Type: ApplicationFiled: June 3, 2011Publication date: December 6, 2012Applicant: CITY UNIVERSITY OF HONG KONGInventors: Vellaisamy A. L. Roy, Zong-Xiang Xu
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Publication number: 20120276687Abstract: The design and synthesis of six nickel charge transfer (CT) complexes are described herein. The six nickel CT complexes have a nickel center, two organic ligands coordinated with the nickel center to form a dianionic square planar supramolecule and an organic counter-cation. The ligands and counter-cations are selected to optimize properties, such as molecular alignment, film morphology, and molecular packaging. Described herein, the ligands can be 2,3-pyrazinedithiol (L1), 1,2-benzenedithol (L2) or 2,3-quinoxalinedithol (L3) and the counter-cations can be diquat (2,2?-ebpy) or methyl viologen (4,4?-mbpy). The six nickel CT complexes can also be utilized semiconductor devices, such as thin film transistors or inverters. Processes are also provided for the fabrication of semiconductors devices. The processes can include fabricating a substrate with a bilayer octadecylphosphonic acid (ODPA)/Al2O3 dielectric and applying one of the six nickel charge transfer (CT) complexes to the substrate.Type: ApplicationFiled: April 29, 2011Publication date: November 1, 2012Applicant: CITY UNIVERSITY OF HONG KONGInventors: Vellaisamy A. L. Roy, Zong-Xiang Xu, Paul Kim Ho Chu, Tat Kun Kwok