Patents by Inventor Zong-Xiang Xu

Zong-Xiang Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9711738
    Abstract: The design and synthesis of six nickel charge transfer (CT) complexes are described herein. The six nickel CT complexes have a nickel center, two organic ligands coordinated with the nickel center to form a dianionic square planar supramolecule and an organic counter-cation as represented by The ligands and counter-cations are selected to optimize properties, such as molecular alignment, film morphology, and molecular packaging. Described herein, the ligands can be 2,3-pyrazinedithiol (L1), 1,2-benzenedithol (L2) or 2,3-quinoxalinedithol (L3) and the counter-cations can be diquat (2,2?-ebpy) or methyl viologen (4,4?-mbpy). The six nickel CT complexes can also be utilized semiconductor devices, such as thin film transistors or inverters. Processes are also provided for the fabrication of semiconductors devices. The processes can include fabricating a substrate with a bilayer octadecylphosphonic acid (ODPA)/Al2O3 dielectric and applying one of the six nickel charge transfer (CT) complexes to the substrate.
    Type: Grant
    Filed: March 3, 2015
    Date of Patent: July 18, 2017
    Assignee: CITY UNIVERSITY OF HONG KONG
    Inventors: Vellaisamy A. L. Roy, Zong-Xiang Xu, Paul Kim Ho Chu, Tat Kun Kwok
  • Patent number: 9202924
    Abstract: A semiconductor device comprising a gate electrode; an insulating layer in electrical connection with the gate electrode; a source electrode and a drain electrode; and a semiconducting channel layer configured to selectively allow electrically connection between the source electrode and the drain electrode based on the voltage on the gate electrode; wherein the semiconducting channel layer comprises metal nanoparticles; and the semiconducting channel layer is in contact with the source electrode, the drain electrode and the insulating layer. A method of manufacturing the semiconductor device of the present invention is also disclosed.
    Type: Grant
    Filed: January 6, 2014
    Date of Patent: December 1, 2015
    Assignee: NANO AND ADVANCED MATERIALS INSTITUTE LIMITED
    Inventors: Arul Lenus Roy Vellaisamy, Ye Zhou, Su Ting Han, Zong Xiang Xu
  • Patent number: 9157886
    Abstract: The design and fabrication of ultrathin poly-3-hexyl thiophene (P3HT) film based amine sensors are described herein. Ultrathin P3HT monolayer films can be built on a patterned flexible n-octadecylphosphonic acid (ODPA)/Al2O3/PET substrate, forming a flexible polymer thin film transistor according to a solution process. The mechanism of the sensor is based on the interaction of amine molecules with the surface of the P3HT monolayer. The interaction of amine molecules with the surface of the P3HT monolayer can affect the current density of the PTFT, and the change in current density can indicate the presence of amine molecules in the surroundings. The amine sensors described herein can easily detect amine molecules in a parts per billion (ppb) range. The amine sensors can be utilized, for example, as disposable sensors within food packaging to ensure the safety of the packaged food.
    Type: Grant
    Filed: June 3, 2011
    Date of Patent: October 13, 2015
    Assignee: CITY UNIVERSITY OF HONG KONG
    Inventors: Vellaisamy A. L. Roy, Zong-Xiang Xu
  • Publication number: 20150179957
    Abstract: The design and synthesis of six nickel charge transfer (CT) complexes are described herein. The six nickel CT complexes have a nickel center, two organic ligands coordinated with the nickel center to form a dianionic square planar supramolecule and an organic counter-cation as represented by The ligands and counter-cations are selected to optimize properties, such as molecular alignment, film morphology, and molecular packaging. Described herein, the ligands can be 2,3-pyrazinedithiol (L1), 1,2-benzenedithol (L2) or 2,3-quinoxalinedithol (L3) and the counter-cations can be diquat (2,2?-ebpy) or methyl viologen (4,4?-mbpy). The six nickel CT complexes can also be utilized semiconductor devices, such as thin film transistors or inverters. Processes are also provided for the fabrication of semiconductors devices. The processes can include fabricating a substrate with a bilayer octadecylphosphonic acid (ODPA)/Al2O3 dielectric and applying one of the six nickel charge transfer (CT) complexes to the substrate.
    Type: Application
    Filed: March 3, 2015
    Publication date: June 25, 2015
    Inventors: Vellaisamy A. L. Roy, Zong-Xiang Xu, Paul Kim Ho Chu, Tat Kun Kwok
  • Patent number: 8981096
    Abstract: The design and synthesis of six nickel charge transfer (CT) complexes are described herein. The six nickel CT complexes have a nickel center, two organic ligands coordinated with the nickel center to form a dianionic square planar supramolecule and an organic counter-cation as represented by The ligands and counter-cations are selected to optimize properties, such as molecular alignment, film morphology, and molecular packaging. Described herein, the ligands can be 2,3-pyrazinedithiol (L1), 1,2-benzenedithol (L2) or 2,3-quinoxalinedithol (L3) and the counter-cations can be diquat (2,2?-ebpy) or methyl viologen (4,4?-mbpy). The six nickel CT complexes can also be utilized semiconductor devices, such as thin film transistors or inverters. Processes are also provided for the fabrication of semiconductors devices. The processes can include fabricating a substrate with a bilayer octadecylphosphonic acid (ODPA)/Al2O3 dielectric and applying one of the six nickel charge transfer (CT) complexes to the substrate.
    Type: Grant
    Filed: April 29, 2011
    Date of Patent: March 17, 2015
    Assignee: City University of Hong Kong
    Inventors: Vellaisamy A. L. Roy, Zong-Xiang Xu, Paul Kim Ho Chu, Tat Kun Kwok
  • Publication number: 20140197405
    Abstract: A semiconductor device comprising a gate electrode; an insulating layer in electrical connection with the gate electrode; a source electrode and a drain electrode; and a semiconducting channel layer configured to selectively allow electrically connection between the source electrode and the drain electrode based on the voltage on the gate electrode; wherein the semiconducting channel layer comprises metal nanoparticles; and the semiconducting channel layer is in contact with the source electrode, the drain electrode and the insulating layer. A method of manufacturing the semiconductor device of the present invention is also disclosed.
    Type: Application
    Filed: January 6, 2014
    Publication date: July 17, 2014
    Applicant: Nano and Advanced Materials Institute Limited
    Inventors: Arul Lenus Roy Vellaisamy, Ye Zhou, Su Ting Han, Zong Xiang Xu
  • Publication number: 20120304741
    Abstract: The design and fabrication of ultrathin poly-3-hexyl thiophene (P3HT) film based amine sensors are described herein. Ultrathin P3HT monolayer films can be built on a patterned flexible n-octadecylphosphonic acid (ODPA)/Al2O3/PET substrate, forming a flexible polymer thin film transistor according to a solution process. The mechanism of the sensor is based on the interaction of amine molecules with the surface of the P3HT monolayer. The interaction of amine molecules with the surface of the P3HT monolayer can affect the current density of the PTFT, and the change in current density can indicate the presence of amine molecules in the surroundings. The amine sensors described herein can easily detect amine molecules in a parts per billion (ppb) range. The amine sensors can be utilized, for example, as disposable sensors within food packaging to ensure the safety of the packaged food.
    Type: Application
    Filed: June 3, 2011
    Publication date: December 6, 2012
    Applicant: CITY UNIVERSITY OF HONG KONG
    Inventors: Vellaisamy A. L. Roy, Zong-Xiang Xu
  • Publication number: 20120276687
    Abstract: The design and synthesis of six nickel charge transfer (CT) complexes are described herein. The six nickel CT complexes have a nickel center, two organic ligands coordinated with the nickel center to form a dianionic square planar supramolecule and an organic counter-cation. The ligands and counter-cations are selected to optimize properties, such as molecular alignment, film morphology, and molecular packaging. Described herein, the ligands can be 2,3-pyrazinedithiol (L1), 1,2-benzenedithol (L2) or 2,3-quinoxalinedithol (L3) and the counter-cations can be diquat (2,2?-ebpy) or methyl viologen (4,4?-mbpy). The six nickel CT complexes can also be utilized semiconductor devices, such as thin film transistors or inverters. Processes are also provided for the fabrication of semiconductors devices. The processes can include fabricating a substrate with a bilayer octadecylphosphonic acid (ODPA)/Al2O3 dielectric and applying one of the six nickel charge transfer (CT) complexes to the substrate.
    Type: Application
    Filed: April 29, 2011
    Publication date: November 1, 2012
    Applicant: CITY UNIVERSITY OF HONG KONG
    Inventors: Vellaisamy A. L. Roy, Zong-Xiang Xu, Paul Kim Ho Chu, Tat Kun Kwok