Patents by Inventor Zou Zheng

Zou Zheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Toxic residual gas removal by non-reactive ion sputtering
    Patent number: 6660642
    Abstract: A novel method to remove residual toxic gases trapped by a polymerizing process by an inert ion sputter is described. A masking layer is formed overlying a semiconductor substrate. An opening is etched through the masking layer into the semiconductor substrate whereby a polymer forms on sidewalls of the opening and whereby residual toxic gas reactants from gases used in the etching step are adsorbed by the polymer. Thereafter, the polymer is sputtered with non-reactive ions whereby the residual toxic gas reactants are desorbed from the polymer to complete removal of residual toxic gas reactants in the fabrication of an integrated circuit device.
    Type: Grant
    Filed: July 25, 2001
    Date of Patent: December 9, 2003
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Zou Zheng, Zhou Mei Sheng, Yelehanka Ramachandramurthy Pradeep, Paul Proctor
  • Toxic residual gas removal by non-reactive ion sputtering
    Publication number: 20030022504
    Abstract: A novel method to remove residual toxic gases trapped by a polymerizing process by an inert ion sputter is described. A masking layer is formed overlying a semiconductor substrate. An opening is etched through the masking layer into the semiconductor substrate whereby a polymer forms on sidewalls of the opening and whereby residual toxic gas reactants from gases used in the etching step are adsorbed by the polymer. Thereafter, the polymer is sputtered with non-reactive ions whereby the residual toxic gas reactants are desorbed from the polymer to complete removal of residual toxic gas reactants in the fabrication of an integrated circuit device.
    Type: Application
    Filed: July 25, 2001
    Publication date: January 30, 2003
    Applicant: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Zou Zheng, Zhou Mei Sheng, Yelehanka Ramachandramurthy Pradeep, Paul Proctor
  • Method to protect chamber wall from etching by endpoint plasma clean
    Patent number: 6124927
    Abstract: A new method of controlling the level of cleaning of the etch chamber by measuring the light emission caused by particles within the plasma of the etch chamber. The etch chamber clean process is invoked as soon as the level of contaminants within the etch chamber is observed as being too high. This measuring of the contaminants within the etch chamber is performed by measuring the particle light emission. The etch chamber cleaning process is considered complete when the light intensity created by existing particles in the chamber drops by a certain percentage.
    Type: Grant
    Filed: May 19, 1999
    Date of Patent: September 26, 2000
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Qinghua Zhong, Zou Zheng, Yelehanka Ramachandra Murthy Pradeep, Zhou Mei Sheng