Abstract: A process for manufacturing an electroluminescent device, comprising: (a) using a stack comprising, successively: a substrate having a surface; matrix arrays of pixels formed on the surface of the substrate, of columnar shape; an encapsulating layer arranged to cover the matrix arrays of pixels; a dielectric layer formed on the encapsulating layer; (b) performing a directional etch along the normal to the surface of the substrate, of a portion of the dielectric layer extending between the pixels of the matrix arrays of pixels; the dielectric layer having a portion remaining at the end of step (b); and (c) performing a selective chemical etch of the remaining portion of the dielectric layer with a chemical etchant that permits selective etching of the remaining portion of the dielectric layer with respect to the encapsulating layer.

Abstract: A process for manufacturing an electroluminescent device, comprising: (a) using a stack comprising, successively: a substrate having a surface; matrix arrays of pixels formed on the surface of the substrate, of columnar shape; an encapsulating layer arranged to cover the matrix arrays of pixels; a dielectric layer formed on the encapsulating layer; (b) performing a directional etch along the normal to the surface of the substrate, of a portion of the dielectric layer extending between the pixels of the matrix arrays of pixels; the dielectric layer having a portion remaining at the end of step (b); and (c) performing a selective chemical etch of the remaining portion of the dielectric layer with a chemical etchant that permits selective etching of the remaining portion of the dielectric layer with respect to the encapsulating layer.

Abstract: The invention relates to a planar photodiode 1 including a detection portion 10 made of a germanium-based material M0, and a peripheral lateral portion 3 including several materials stacked on top of one another, including a material M1 having a coefficient of thermal expansion lower than that of the material M0, and a material M2 having a coefficient of thermal expansion higher than or equal to that of the material M0. The intermediate region 13 includes a portion P1 surrounded by the material M1 and having tensile stresses. It also includes a portion P2 surrounded by the material M2 and having compressive stresses. This portion P2 surrounds a n doped box 12.

Abstract: The invention relates to a planar photodiode 1 including a detection portion 10 made of a germanium-based material M0, and a peripheral lateral portion 3 including several materials stacked on top of one another, including a material M1 having a coefficient of thermal expansion lower than that of the material M0, and a material M2 having a coefficient of thermal expansion higher than or equal to that of the material M0. The intermediate region 13 includes a portion P1 surrounded by the material M1 and having tensile stresses. It also includes a portion P2 surrounded by the material M2 and having compressive stresses. This portion P2 surrounds a n doped box 12.

Abstract: A method for producing an individualisation zone of a chip including a first and a second level of electric tracks, and an interconnecting level including vias, the method including the following steps: providing the first level and a dielectric layer with the basis of a dielectric material including a non-zero nitrogen concentration, forming a mask on the dielectric layer, etching the dielectric layer through mask openings by a vapour HF etching, so as to form: openings leading to the first level of electric tracks, nitrogenous residues randomly distributed at the level of certain openings, the openings thus including openings with nitrogenous residues and openings without residues, filling the openings so as to form the vias of the interconnecting level, the vias including functional vias at the level of openings without residues and inactive vias at the level of the openings with residues.

Abstract: A method of forming an opening in an insulating layer covering a semiconductor region including germanium, successively including: the forming of a first masking layer on the insulating layer; the forming on the first masking layer of a second masking layer including an opening; the etching of an opening in the first masking layer, in line with the opening of the second masking layer; the removal of the second masking layer by oxygen-based etching; and the forming of the opening of said insulating layer in line with the opening of the first masking layer, by fluorine-based etching.

Abstract: A process for producing a hybrid structured surface, including depositing, on a substrate, a layer of mineral resin including a proportion of Si and/or of SiO2 includes between 1% and 30% by molar mass; forming a structure including a plurality of pattern motifs in that layer, having at least one dimension, measured parallel or perpendicular to the substrate, includes between 50 nm and 500 ?m; forming a roughness on at least part of the surface of the pattern motifs.

Abstract: A method of forming an area of electric contact with a semiconductor region mainly made of germanium, comprising the forming of a first area made of a first intermetallic material where more than 70% of the non-metal atoms are silicon atoms. There is also described a device including such a contacting area.

Abstract: A method of forming an opening in an insulating layer covering a semiconductor region including germanium, successively including: the forming of a first masking layer on the insulating layer; the forming on the first masking layer of a second masking layer including an opening; the etching of an opening in the first masking layer, in line with the opening of the second masking layer; the removal of the second masking layer by oxygen-based etching; and the forming of the opening of said insulating layer in line with the opening of the first masking layer, by fluorine-based etching.

Abstract: A method of forming an area of electric contact with a semiconductor region mainly made of germanium, comprising the forming of a first area made of a first intermetallic material where more than 70% of the non-metal atoms are silicon atoms. There is also described a device including such a contacting area.