Abstract: A combination comprises two propylene-based polymers which can provide flexibility in adjusting shrinkage rate of components comprising such combination.

Abstract: A semiconductor device is provided including a substrate and a plurality of gate stacks. The gate stack includes a dielectric layer disposed on the substrate, a first capping layer disposed on the dielectric layer, a second capping layer disposed on the first capping layer, and a gate electrode layer covering the second capping layer. The first capping layer having a roughened surface may enhance the formation of the second capping layer. The second capping layer has a bottom portion and a sidewall portion, and the thickness of the bottom portion is formed to be greater than the thickness of the sidewall portion, so that the dielectric property of the second capping layer may be significantly improved. Further, a method for manufacturing the semiconductor device also provides herein.

Abstract: A semiconductor device is provided including a substrate and a plurality of gate stacks. The gate stack includes a dielectric layer disposed on the substrate, a first capping layer disposed on the dielectric layer, a second capping layer disposed on the first capping layer, and a gate electrode layer covering the second capping layer. The first capping layer having a roughened surface may enhance the formation of the second capping layer. The second capping layer has a bottom portion and a sidewall portion, and the thickness of the bottom portion is formed to be greater than the thickness of the sidewall portion, so that the dielectric property of the second capping layer may be significantly improved. Further, a method for manufacturing the semiconductor device also provides herein.

Abstract: A semiconductor device is provided including a substrate and a plurality of gate stacks. The gate stack includes a dielectric layer disposed on the substrate, a first capping layer disposed on the dielectric layer, a second capping layer disposed on the first capping layer, and a gate electrode layer covering the second capping layer. The first capping layer having a roughened surface may enhance the formation of the second capping layer. The second capping layer has a bottom portion and a sidewall portion, and the thickness of the bottom portion is formed to be greater than the thickness of the sidewall portion, so that the dielectric property of the second capping layer may be significantly improved. Further, a method for manufacturing the semiconductor device also provides herein.

Abstract: A semiconductor device is provided including a substrate and a plurality of gate stacks. The gate stack includes a dielectric layer disposed on the substrate, a first capping layer disposed on the dielectric layer, a second capping layer disposed on the first capping layer, and a gate electrode layer covering the second capping layer. The first capping layer having a roughened surface may enhance the formation of the second capping layer. The second capping layer has a bottom portion and a sidewall portion, and the thickness of the bottom portion is formed to be greater than the thickness of the sidewall portion, so that the dielectric property of the second capping layer may be significantly improved. Further, a method for manufacturing the semiconductor device also provides herein.

Abstract: A system comprises a finding scene constructing module, for constructing and displaying a finding scene according to a scene of different levels of difficulty, a base map matching the scene and a target to be found; a finding position processing module, for acquiring a finding position and comparing the finding position with a distribution area of the target to be found, to obtain a comparison result and judge, according to the comparison result, whether a child accurately finds the target to be found; a scoring module, for scoring according to the comparison result, counting total scores and submitting the total scores to a database for storage; an audio and video module, for providing prompts and knowledge for the child according to the comparison result; and a scene element database, for storing the scene of different levels of difficulty, the base map matching the scene, the target, and the audio and video.