Patents by Inventor Zubair Al Azim

Zubair Al Azim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10734052
    Abstract: A bit cell driving mechanism is disclosed. The mechanism includes a bit cell which includes a first magnetic tunnel junction (MTJ) cell, including a pinned layer, a non-magnetic layer, a free layer having two magnetic regions separated by a laterally moveable domain wall, and a spin-hall metal layer configured to receive an electrical current therethrough which causes the DW to move laterally. The mechanism also includes a second MTJ cell coupled to the first MTJ cell as well as an interconnect driver configured to provide electrical current to the first MTJ cell during a write operation.
    Type: Grant
    Filed: October 23, 2018
    Date of Patent: August 4, 2020
    Assignee: Purdue Research Foundation
    Inventors: Zubair Al Azim, Ankit Sharma, Kaushik Roy
  • Patent number: 10592802
    Abstract: An electronic synapse is disclosed, comprising a heavy metal layer having a high spin orbit coupling, a domain wall magnet layer having a bottom surface adjacent to a top surface of the heavy metal layer, the domain wall magnet layer having a perpendicular magnetic anisotropy, the domain wall magnet layer having a domain wall, the domain wall running parallel to a longitudinal axis of the domain wall magnet layer, a pinned layer having perpendicular magnetic anisotropy, and an oxide tunnel barrier connected between the domain wall magnet layer and the pinned layer, wherein the pinned layer, the oxide tunnel barrier, and the free layer form a magnetic tunnel junction.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: March 17, 2020
    Assignee: Purdue Research Foundation
    Inventors: Abhronil Sengupta, Zubair Al Azim, Xuanyao Kelvin Fong, Kaushik Roy
  • Publication number: 20190122716
    Abstract: A bit cell driving mechanism is disclosed. The mechanism includes a bit cell which includes a first magnetic tunnel junction (MTJ) cell, including a pinned layer, a non-magnetic layer, a free layer having two magnetic regions separated by a laterally moveable domain wall, and a spin-hall metal layer configured to receive an electrical current therethrough which causes the DW to move laterally. The mechanism also includes a second MTJ cell coupled to the first MTJ cell as well as an interconnect driver configured to provide electrical current to the first MTJ cell during a write operation.
    Type: Application
    Filed: October 23, 2018
    Publication date: April 25, 2019
    Applicant: Purdue Research Foundation
    Inventors: Zubair Al Azim, Ankit Sharma, Kaushik Roy
  • Publication number: 20170249550
    Abstract: An electronic synapse is disclosed, comprising a heavy metal layer having a high spin orbit coupling, a domain wall magnet layer having a bottom surface adjacent to a top surface of the heavy metal layer, the domain wall magnet layer having a perpendicular magnetic anisotropy, the domain wall magnet layer having a domain wall, the domain wall running parallel to a longitudinal axis of the domain wall magnet layer, a pinned layer having perpendicular magnetic anisotropy, and an oxide tunnel barrier connected between the domain wall magnet layer and the pinned layer, wherein the pinned layer, the oxide tunnel barrier, and the free layer form a magnetic tunnel junction.
    Type: Application
    Filed: February 28, 2017
    Publication date: August 31, 2017
    Applicant: Purdue Research Foundation
    Inventors: Abhronil Sengupta, Zubair Al Azim, Xuanyao Kelvin Fong, Kaushik Roy