Abstract: Emissive layers for electroluminescent display devices are described herein. The emissive layer can include a two-dopant system having a population of quantum dots (QDs) and a population of molecules exhibiting thermally activated delayed fluorescence (TADF). In some instances, one or both of the QDs and TADF molecules can be disposed in a host matrix. In some instances, the QDs and TADF molecules can be disposed in separate host matrices. In some instances, an electroluminescent display device can include an emissive layer comprising a population of quantum dots (QDs) and a layer adjacent to the emissive layer, the adjacent layer comprising a population of molecules exhibiting thermally activated delayed fluorescence (TADF).

Abstract: Compositions for solution-based deposition of CIGS films are described. The compositions include ternary, quaternary or quinary chalcogenide nanoparticles (i.e., CIGS nanoparticles) and one or more inorganic salts dissolved or dispersed in a solvent to form an ink. The ink can be deposited on a substrate by conventional coating techniques and then annealed to form a crystalline layer. Further processing can be employed to fabricate a PV device. The inorganic salts are included to (i) tune the stoichiometry of the CIGS precursor ink to a desirable ratio, thus tuning the semiconductor band gap, to (ii) dope the CIGS layer with additives, such as Sb and/or Na, to promote grain growth, and/or to (iii) modify and improve the coating properties of the CIGS precursor ink.

Abstract: An adhesive layer in a copper indium gallium selenide (CIGS) solar cell is provided between the main CIGS layer and molybdenum film to avoid delamination of the CIGS layer and may also act as an electrical modification to increase the charge collection and power conversion efficiency (PCE) of the device.

Abstract: Compositions for solution-based deposition of CIGS films are described. The compositions include ternary, quaternary or quinary chalcogenide nanoparticles (i.e., CIGS nanoparticles) and one or more inorganic salts dissolved or dispersed in a solvent to form an ink. The ink can be deposited on a substrate by conventional coating techniques and then annealed to form a crystalline layer. Further processing can be employed to fabricate a PV device. The inorganic salts are included to (i) tune the stoichiometry of the CIGS precursor ink to a desirable ratio, thus tuning the semiconductor band gap, to (ii) dope the CIGS layer with additives, such as Sb and/or Na, to promote grain growth, and/or to (iii) modify and improve the coating properties of the CIGS precursor ink.

Abstract: A method for formulating a CIGS nanoparticle-based ink, which can be processed to form a thin film with a crack-free limit (CFL) of 500 nm or greater, comprises: dissolving or dispersing Cu(In,Ga)S2 and Cu(In,Ga)Se2 nanoparticles; mixing the nanoparticle solutions/dispersions and adding oleic acid to form an ink; depositing the ink on a substrate; annealing to remove the organic components of the ink formulation; forming a film with a CFL ?500 nm; and, repeating the deposition and annealing process to form a CIGS film having a thickness ?1 ?m. The film so produced may be incorporated into a thin film photovoltaic device.

Abstract: An organic light-emitting diode with an inorganic two-dimensional (2D) EL active material may comprise a plurality of layers on a plastic or glass substrate. In addition to the EL layer, the device may comprise a hole injection layer, a hole transport layer/electron blocking layer, an electron transport layer/hole blocking layer, an electron injection layer, and optional buffer layers such as poly(methyl methacrylate) (PMMA) to help balance the charge injection into the 2D material and redistribute the electric field.

Abstract: A method for formulating a CIGS nanoparticle-based ink, which can be processed to form a thin film with a crack-free limit (CFL) of 500 nm or greater, comprises: dissolving or dispersing Cu(In,Ga)S2 and Cu(In,Ga)Se2 nanoparticles; mixing the nanoparticle solutions/dispersions and adding oleic acid to form an ink; depositing the ink on a substrate; annealing to remove the organic components of the ink formulation; forming a film with a CFL ?500 nm; and, repeating the deposition and annealing process to form a CIGS film having a thickness ?1 ?m. The film so produced may be incorporated into a thin film photovoltaic device.

Abstract: Compositions for solution-based deposition of CIGS films are described. The compositions include ternary, quaternary or quinary chalcogenide nanoparticles (i.e., CIGS nanoparticles) and one or more inorganic salts dissolved or dispersed in a solvent to form an ink. The ink can be deposited on a substrate by conventional coating techniques and then annealed to form a crystalline layer. Further processing can be employed to fabricate a PV device. The inorganic salts are included to (i) tune the stoichiometry of the CIGS precursor ink to a desirable ratio, thus tuning the semiconductor band gap, to (ii) dope the CIGS layer with additives, such as Sb and/or Na, to promote grain growth, and/or to (iii) modify and improve the coating properties of the CIGS precursor ink.

Abstract: Photovoltaic (PV) devices and solution-based methods of making the same are described. The PV devices include a CIGS-type absorber layer formed on a molybdenum substrate. The molybdenum substrate includes a layer of low-density molybdenum proximate to the absorber layer. The presence of low-density molybdenum proximate to the absorber layer has been found to promote the growth of large grains of CIGS-type semiconductor material in the absorber layer.

Abstract: A full colour optical device comprising: an anode; a cathode; a light-emitting region located between the anode and the cathode; characterised in that said light-emitting region comprises subpixels of blue, green and red emitting materials, the blue emitting material being fluorescent and at least one of the green and red emitting materials being phosphorescent, wherein the cathode injects electrons into each subpixel and the cathode comprises: a first layer comprising a compound of a group 1, group 2 or transition metal; and a second layer comprising a material having a work function below 3.5 eV.

Abstract: A method of forming a an emissive layer of an optical device includes the steps of depositing a phosphorescent material to form a deposited layer, and annealing the deposited layer to form an emissive layer. A method of manufacturing an optical device, an emissive layer of an optical device, and an optical device containing such a layer are also disclosed.