Abstract: A semiconductor package includes: a substrate having a metallic surface; a semiconductor die metallurgically bonded to the metallic surface of the substrate by a first solder joint; and a solder wetting structure metallurgically welded to the metallic surface of the substrate outside a perimeter of the semiconductor die and adjacent to one or more side faces of the semiconductor die. Excess solder squeezed out from under the semiconductor die is metallurgically bonded to the solder wetting structure. Methods of producing the semiconductor package and solder wetting structure are also described.

Abstract: The antibodies of the present invention have specific binding activity to HLA-DQ2.5 and may have binding activity to HLA-DQ2.2 and/or HLA-DQ7.5, but substantially no binding activity to HLA-DQ8, HLA-DQ5.1, HLA-DQ6.3, HLA-DQ7.3, HLA-DR, HLA-DP, or a complex of the invariant chain (CD74) and HLA-DQ2.5. The antibodies bind to HLA-DQ2.5 in the presence of a gluten peptide such as gliadin, i.e., bind to HLA-DQ2.5 forming a complex with the gluten peptide. The antibodies have neutralizing activity against the binding between HLA-DQ2.5 and TCR, and thus block the interaction between HLA-DQ2.5 and an HLA-DQ2.5-restricted CD4+ T cell. The antibodies do not undergo rapid internalization mediated by the invariant chain.

Abstract: An adhesive article including: a coextruded polymeric backing that includes: a first layer including an amorphous polyamide, the first layer having first and second opposing major surfaces; and a second layer including a polar-modified polyolefin, the second layer having first and second opposing major surfaces; wherein the first major surface of the second layer is in contact with the second major surface of the first layer; and an acrylic pressure sensitive adhesive layer in contact with the first major surface of the first layer of the backing.

Abstract: The present invention provides anti-HLA-DQ2.5 antibodies. The anti-HLA-DQ2.5 antibodies of the invention have binding activity to complexes formed by HLA-DQ2.5 and a gluten peptide, but have substantially no binding activity to complexes formed by HL A-DQ2.5 and an irrelevant peptide. Furthermore, it was found that the antibodies of the invention have inhibitory effects on T cell activation.

Abstract: The antibodies of the present invention have specific binding activity to HLA-DQ2.5 and may have binding activity to HLA-DQ2.2 and/or HLA-DQ7.5, but substantially no binding activity to HLA-DQ8, HLA-DQ5.1, HLA-DQ6.3, HLA-DQ7.3, HLA-DR, HLA-DP, or a complex of the invariant chain (CD74) and HLA-DQ2.5. The antibodies bind to HLA-DQ2.5 in the presence of a gluten peptide such as gliadin, i.e., bind to HLA-DQ2.5 forming a complex with the gluten peptide. The antibodies have neutralizing activity against the binding between HLA-DQ2.5 and TCR, and thus block the interaction between HLA-DQ2.5 and an HLA-DQ2.5-restricted CD4+ T cell. The antibodies do not undergo rapid internalization mediated by the invariant chain.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are provided. The methods may include forming a sacrificial gate pattern on a substrate, forming a first spacer on a sidewall of the sacrificial gate pattern and forming a first interlayer dielectric (ILD) layer covering a sidewall of the first spacer and exposing a top surface of the first spacer. The first spacer may expose an upper portion of the sidewall of the sacrificial gate pattern. The methods may also include forming a capping insulating pattern covering top surfaces of the first spacer and the first ILD layer, replacing the sacrificial gate pattern with a gate electrode structure and patterning the capping insulating pattern to form a second spacer on the first spacer and between the gate electrode structure and the first ILD layer. The second spacer may be formed of a material having a dielectric constant higher than a dielectric constant of the first spacer.

Abstract: A semiconductor device is manufactured using an expandable material. The method includes forming a first gate insulating layer on a substrate, forming first and second gate structures on the first gate insulating layer, the first and second gate structures being spaced apart from each other at a distance, forming an expandable material on sidewalls and upper surfaces of the first and second gate structures, forming a gap-fill layer on the expandable material between the first and second gate structures, and performing a heat-treatment process to increase the volume of the expandable material.

Abstract: A method of manufacturing a semiconductor device can uniformly form a metal gate irrespective of gate pattern density. The method includes forming an interlayer dielectric layer having a trench on a substrate, forming a metal layer having first, second and third sections extending along the sides of the trench, the bottom of the trench and on the interlayer dielectric layer, respectively, forming a sacrificial layer pattern exposing an upper part of the first section of the metal layer, forming a spacer pattern on the exposed part of the first section of the metal layer, and forming a first gate metal layer by etching the first section of the metal layer using the sacrificial layer pattern and the spacer pattern as masks.

Abstract: Techniques for managing network elements in a network are provided. A network element dependent module is utilized to provide functions for managing a specific type of network element. The network element dependent module can be for a network element type and software version. The network element application can manage new network elements, even those with new features, without requiring an update to the network management application.

Abstract: An inter-box connector (IBC) installation and removal system for a freight container having four bottom corner fittings, with each corner fitting being capable of receiving an IBC. The system comprises an IBC handling device having at least one elongated magazine, wherein the magazine has an opening at least one end thereof and being adapted for receiving and supplying IBCs through said opening. The handling device also includes a transport mechanism adapted to move the magazine into IBC receiving and supplying positions such that in each of said positions the opening of the magazine is proximate to one of the respective corner fittings.