Abstract: A portable oxygen generator comprises an air pump, a molecular tube and a molecular seat, the molecular tube is detachably fixed on the side wall of the molecular seat, the air pump is disposed at the lower part of the molecular seat. An air filter bucket, an oxygen storage bucket and an exhaust silencing bucket are disposed inside the molecular seat, the air filter bucket is provided with an air inlet communicated with the outside air. An air channel, an oxygen channel and an exhaust channel are disposed inside the molecular seat, the air channel is respectively communicated with the air filter bucket, the air pump and the molecular tube, the oxygen channel is respectively communicated with the molecular tube and the oxygen storage bucket, the exhaust channel is respectively communicated with the molecular tube and the exhaust silencing bucket, the air channel, the oxygen channel and the exhaust channel are respectively connected with a solenoid valve.

Abstract: A portable oxygen generator comprises an air pump, a molecular tube and a molecular seat, the molecular tube is detachably fixed on the side wall of the molecular seat, the air pump is disposed at the lower part of the molecular seat. An air filter bucket, an oxygen storage bucket and an exhaust silencing bucket are disposed inside the molecular seat, the air filter bucket is provided with an air inlet communicated with the outside air. An air channel, an oxygen channel and an exhaust channel are disposed inside the molecular seat, the air channel is respectively communicated with the air filter bucket, the air pump and the molecular tube, the oxygen channel is respectively communicated with the molecular tube and the oxygen storage bucket, the exhaust channel is respectively communicated with the molecular tube and the exhaust silencing bucket, the air channel, the oxygen channel and the exhaust channel are respectively connected with a solenoid valve.

Abstract: A method for fabricating integrated circuit devices, e.g., Flash memory devices, embedded Flash memory devices. The method includes providing a semiconductor substrate, e.g., silicon, silicon on insulator, epitaxial silicon. In a specific embodiment, the semiconductor substrate has a peripheral region and a cell region. The method includes forming a first dielectric layer (e.g., silicon dioxide) having a first thickness overlying a cell region and a second dielectric layer (e.g., silicon dixode) having a second thickness overlying the peripheral region. In a specific embodiment, the cell region is for Flash memory devices and/or other like structures. The method forms a pad oxide layer overlying the first dielectric layer and forms a nitride layer overlying the pad oxide layer.

Abstract: A method of preserving alignment marks through steps of depositing intermetal dielectric, depositing refractory metal, and planarizing the wafer is described. After deposition of a layer of first metal a layer of first intermetal dielectric is deposited on an integrated circuit wafer. The first intermetal dielectric is then etched away from the alignment region of the wafer. A layer of second metal is then deposited. A layer of second intermetal dielectric is then deposited. The layer of second intermetal dielectric is left in place in the alignment region, a layer of refractory metal is deposited, and the wafer is planarized. The refractory metal and second intermetal dielectric are then cleared from the alignment region. The second intermetal dielectric protects the alignment marks during wafer planarization. A layer of third metal can then be deposited and the alignment marks are be preserved.