Patents by Inventor Zuoliang WU

Zuoliang WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Rear-projection photodetection yarn clearing apparatus and ultraviolet enhanced silicon photodiode thereof
    Patent number: 10352878
    Abstract: A rear-projection photodetection yarn clearing apparatus includes a light emitting diode and a detector arranged behind a to-be-detected yarn, and further includes a reflector arranged in front of the to-be-detected yarn. A front end face of the light emitting diode is flush with a photosurface of the detector, a light filter for capturing light rays having a waveband from 330 nm to 470 nm is also arranged in front of the light emitting diode and the detector, and a light-reflecting surface of the reflector is in parallel with the photosurface of the detector. The light emitting diode includes an ultraviolet light emitting diode, and the detector includes an ultraviolet enhanced silicon photodiode. The ultraviolet enhanced silicon photodiode is made from a high-resistivity N-type (111) silicon wafer having a resistivity of 3,000 ?·cm and a field oxide thickness of 1,000 nm.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: July 16, 2019
    Assignee: Shanghai Institute of Kehua Optoelectronic Techniques
    Inventors: Hejian Peng, Zuoliang Wu
  • REAR-PROJECTION PHOTODETECTION YARN CLEARING APPARATUS AND ULTRAVIOLET ENHANCED SILICON PHOTODIODE THEREOF
    Publication number: 20190072498
    Abstract: A rear-projection photodetection yarn clearing apparatus includes a light emitting diode and a detector arranged behind a to-be-detected yarn, and further includes a reflector arranged in front of the to-be-detected yarn. A front end face of the light emitting diode is flush with a photosurface of the detector, a light filter for capturing light rays having a waveband from 330 nm to 470 nm is also arranged in front of the light emitting diode and the detector, and a light-reflecting surface of the reflector is in parallel with the photosurface of the detector. The light emitting diode includes an ultraviolet light emitting diode, and the detector includes an ultraviolet enhanced silicon photodiode. The ultraviolet enhanced silicon photodiode is made from a high-resistivity N-type (111) silicon wafer having a resistivity of 3,000 ?·cm and a field oxide thickness of 1,000 nm.
    Type: Application
    Filed: January 15, 2018
    Publication date: March 7, 2019
    Applicant: Shanghai Institute of Kehua Optoelectronic Techniques
    Inventors: Hejian PENG, Zuoliang WU