Abstract: Embodiments of the present disclosure relate to chamber kits, processing chambers, and related methods and components for gas activation applicable for semiconductor manufacturing. In one or more embodiments, a processing chamber includes a chamber body and one or more heat sources configured to heat a processing volume of the chamber body. The chamber body includes one or more gas inject passages formed in the chamber body, and one or more gas exhaust passages formed in the chamber body. The processing chamber includes a first pre-heat ring that includes a first opaque surface, and a second pre-heat ring that includes a second opaque surface. The first pre-heat ring and the second pre-heat ring define a first gas flow path between the first opaque surface and the second opaque surface, and the first gas flow path in fluid communication with at least one of the one or more gas inject passages.

Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Abstract: Embodiments described herein relate to lift frames for central heating, and related processing chambers and methods. In one or more embodiments, a lift frame for positioning in a processing chamber applicable for use in semiconductor manufacturing includes a shaft. The shaft includes an opening formed in the shaft, and the shaft includes a first material. The lift frame includes a plurality of arms extending outwardly relative to the shaft, and an absorptive mass disposed in the opening of the shaft. The absorptive mass includes a second material having a higher absorptivity than the first material of the shaft.

Abstract: A process chamber is provided including: a chamber body enclosing an interior volume; a first substrate support and a second substrate support each positioned in the interior volume, the first substrate support positioned over the second substrate support; a barrier positioned between the first substrate support and the second substrate support, the interior volume including a first portion above the barrier and a second portion below the barrier; a first gas inlet configured to provide gas to the first portion of the interior volume; and a recirculation passageway having a first port connected to the first portion of the interior volume and a second port connected to the second portion of the interior volume.

Abstract: An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the mea

Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Abstract: Semiconductor processing methods and semiconductor structures are provided with improved doping in target regions. Methods include providing a substrate disposed within a semiconductor processing chamber, where one or more undoped target regions are formed on the substrate. Methods include subjecting the one or more undoped target regions to a pre-clean operation, removing at least a portion of any oxide present on the one or more undoped target regions. Methods include contacting the one or more undoped target regions with a gas phase dopant or a radical thereof, doping the one or more target regions.

Abstract: Embodiments of the present disclosure relate to measuring systems, processing systems, and related apparatus and methods that include band gap materials for temperature measurement calibration. In one or more embodiments, a measurement system includes a substrate support assembly that includes an inner section and an outer section. The inner section includes a first face, a second face opposing the first face, one or more first support recesses formed in the first face, and one or more openings extending between the one or more first support recesses and the second face. The measurement system includes one or more calibration substrates sized and shaped for positioning at least partially in the one or more first support recesses. The measurement system includes a band edge calibration assembly that includes an energy source and a band edge detector.

Abstract: A substrate support assembly is provided including: a susceptor assembly that includes an inner portion having an inner body, an outer rim disposed around the inner body, and a plurality of recessed portions, each recessed portion recessed relative to a lower surface of the inner body; and an outer portion positioned around the inner portion, the outer portion including an inner ledge. The outer rim of the inner portion is positioned on the inner ledge of the outer portion; and a first plurality of lift pins. Each lift pin of the first plurality of lift pins underlies one of the recessed portions of the inner portion of the susceptor assembly.

Abstract: A method for substrate processing includes flowing one or more process reactive gases into an upper volume of a processing chamber, flowing cleaning gas into a lower volume of the processing chamber, measuring temperature of an inner surface of the lower volume of the processing chamber, and adjusting temperature of the inner surface of the lower volume of the processing chamber, based on the measured temperature.

Abstract: The present disclosure relates to methods of correlating zones of processing chambers, and related systems and methods. In one implementation, a method of correlating zones of a processing chamber includes partitioning the processing volume into a plurality of zones along a first direction of the processing volume and a second direction of the processing volume. The second direction intersects the first direction. The plurality of zones have a first zone number (m), and a second zone number (n). The method includes determining a group number. The determining of the group number includes multiplying a first value by a second value. The first value correlates to a first zone number (m) of a plurality of zones and the second value correlates to a second zone number (n) of the plurality of zones. The method includes grouping the zones into groups having a number that is equal to the group number.

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Abstract: The present disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations. In one implementation, an apparatus for substrate processing includes a cassette. The cassette is at least partially supported by a pedestal assembly. The cassette includes a plurality of levels arranged vertically with respect to each other, each level of the plurality of levels including a support surface configured to support a substrate. A level spacing between adjacent levels of the plurality of levels is 25 mm or higher, and the level spacing is defined between the support surfaces of the adjacent levels.

Abstract: The present disclosure relates to flow guide structures and heat shield structures, and related methods, for deposition uniformity and process adjustability. In one implementation, an apparatus for substrate processing includes a chamber body that includes a processing volume. The apparatus includes one or more heat sources. The apparatus includes a flow guide structure positioned in the processing volume. The flow guide structure includes one or more first flow dividers that divide the processing volume into a plurality of flow levels, and one or more second flow dividers oriented to intersect the one or more first flow dividers and divide each flow level of the plurality of flow levels into a plurality of flow sections. The flow guide structure includes one or more third flow dividers oriented to intersect the one or more second flow dividers and divide the plurality of flow sections into a plurality of flow zones.

Abstract: The present disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations. In one implementation, an apparatus for substrate processing includes a chamber body. The chamber body includes a processing volume, a plurality of gas inject passages, and an exhaust port. The apparatus includes one or more upper heat sources positioned above the processing volume, one or more lower heat sources positioned below the processing volume, and a pedestal assembly positioned in the processing volume. The apparatus includes one or more side heat sources positioned outwardly of the processing volume and configured to heat the processing volume through a side of the processing volume. The chamber body can be a dual-chamber body that includes a second processing volume, and the one or more side heat sources can be positioned outwardly of one or more of the processing volume or the second processing volume.

Abstract: Systems, apparatus, and methods are disclosed for foreline diagnostics and control. A foreline coupled to a chamber exhaust is instrumented with one or more sensors, in some embodiments placed between the chamber exhaust and an abatement system. The one or more sensors are positioned to measure pressure in the foreline as an indicator of conductance. The sensors are coupled to a trained machine learning model configured to provide a signal when the foreline needs a cleaning cycle or when preventive maintenance should be performed. In some embodiments, the trained machine learning predicts when cleaning or preventive maintenance will be needed.

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.