Abstract: A differential capacitor structure (10) formed overlying a substrate (12) having a middle layer (24) disposed between a lower layer (18) and an upper layer (28). The lower layer (18) is a static layer that is formed on the substrate (12), the middle layer (24) has a moveable component and is a dynamic layer attached to the substrate (12) using semi-circular tether supports (42), and the upper layer is a static layer that is anchored to the substrate (12). The semi-circular tether supports (42) are formed from a homogeneous material and provide structural stiffness to support the middle layer (24) in space and also provide stress relief.

Abstract: An optical semiconductor component (10) includes a substrate (11) having a surface (12), a photodetector (13) supported by the substrate (11), and a seismic mass (21) overlying the surface (12) of the substrate (11) and overlying a portion of the photodetector (13). The seismic mass (21) has a hole (22) overlying a base region (32) of the photodetector (13) wherein the seismic mass (21) is movable relative to the substrate (11) and the photodetector (13).

Abstract: A semiconductor sensing device (10) for sensing a lateral acceleration includes a field effect transistor (132) fabricated along a sidewall (114) of a trench (112) formed in a substrate (11). A movable gate (12) overlies a channel region (138) of the field effect transistor (132). In response to a lateral acceleration perpendicular to the sidewall (114) of the trench (112), the movable gate (12) moves relative to the substrate (11) in a direction substantially perpendicular to the sidewall (114). The conductive state of the channel region (138) depends on the distance between the movable gate (12) and the channel region (138) and changes in response to the lateral acceleration Thus, the motion of the movable gate (12) modulates a current flowing in the field effect transistor (132). The lateral acceleration is sensed by sensing the current flowing in the field effect transistor (132).

Abstract: A method of fabricating a sensor (100) includes providing a substrate (200), providing a stationary comb structure (117, 118) overlying the substrate (200), providing a movable seismic mass (101) overlying the substrate (200) and movable relative to the substrate (200) and the stationary comb structure (117, 118), and providing a dielectric layer (500, 800) between the stationary comb structure (117, 118) and the movable seismic mass (101). The dielectric layer (500) increases the sensitivity of the sensor (100) and also prevents the movable seismic mass (101) from shorting together with the stationary comb structure (117, 118).