Abstract: Disclosed in the present invention is a semiconductor laser, which includes one or more semiconductor chips (1-1), a total length of a gain region (1-11A) of a light-emitting unit (1-11) of each of the semiconductor chips (1-1) in a slow axis direction being 1 mm˜10 cm; a laser resonant cavity configured to adjust semiconductor laser emitted by the light-emitting unit (1-11) to resonate in the slow axis direction, so that the size of the gain region (1-11A) of the light-emitting unit (1-11) in the slow axis direction matches a fundamental mode spot radius ?0; and a fast-axis collimating element (FAC) disposed in the laser resonant cavity and configured to collimate the laser emitted by the light-emitting unit (1-11) in a fast axis direction. The semiconductor laser according to an embodiment of the present invention can improve the high-power output capability of the gain region on the one hand, and improve the beam quality on the other hand, which can achieve a high beam quality output of M2<2.

Abstract: A laser display system includes a red light semiconductor laser module (1), a green light semiconductor laser module (2), a blue light semiconductor laser module (3), a decoherence device (7, 8, 9), light valves (12, 13, 14), collimating and shaping devices (4, 5, 6), a heat dissipating modules (16-1, 16-2, 16-3), a temperature control module (17) and a semiconductor laser control module (18). The wavelength range output by the red light semiconductor laser module (1) is from 635 nm to 670 nm; the wavelength range output by the green light semiconductor laser module (2) is from 515 nm to 530 nm; the wavelength range output by the blue light semiconductor laser module (3) is from 440 nm to 460 nm.

Abstract: A laser display system includes a red light semiconductor laser module (1), a green light semiconductor laser module (2), a blue light semiconductor laser module (3), a decoherence device (7, 8, 9), light valves (12, 13, 14), collimating and shaping devices (4, 5, 6), a heat dissipating modules (16-1, 16-2, 16-3), a temperature control module (17) and a semiconductor laser control module (18). The wavelength range output by the red light semiconductor laser module (1) is from 635 nm to 670 nm; the wavelength range output by the green light semiconductor laser module (2) is from 515 nm to 530 nm; the wavelength range output by the blue light semiconductor laser module (3) is from 440 nm to 460 nm.

Abstract: The present invention relates to prism-nonlinear optical crystal couplers for frequency conversion, including M pieces of nonlinear optical crystal and one coupling prism stuck to the incident surface or/and exit surface of the crystal by optical stick or a matching liquid. The coupling prisms are the same triangle prisms of right triangle prism, equilateral triangle prism, or inequlateral triangle prism, or are different triangle prisms. It is hopeful to obtain frequency 6th harmonic output.

Abstract: The present invention relates to prism-nonlinear optical crystal couplers for frequency conversion, including M pieces of nonlinear optical crystal and one coupling prism stuck to the incident surface or/and exit surface of the crystal by optical stick or a matching liquid. The coupling prisms are the same triangle prisms of right triangle prism, equilateral triangle prism, or inequilateral triangle prism, or are different triangle prisms. It is hopeful to obtain frequency 6th harmonic output.