METHOD AND APPARATUS FOR ION BEAM PROFILING
An ion beam current density profiler includes a pair of counter-rotating cylindrical masks each featuring a helical slot. The intersection of the slots forms an aperture that scans the width of a ribbon ion beam to allow discrete portions of the beam to impact an inner, concentric current collecting cylinder.
Latest Patents:
The invention concerns generally the field of ion implantation for semiconductor fabrication and more particularly a method and apparatus for obtaining an ion dose profile for an ion beam.
BACKGROUNDMany operations performed during semiconductor fabrication involve bombarding a wafer workpiece with charged particles to “dope” the workpiece by forming layers or pockets on the workpiece that have a relatively high concentration of a given type of particle. To accomplish this doping, ion beams are created to carry desired particles to a workpiece and impact the surface of the workpiece. The ion beam can be in the form of a pencil beam that is scanned across a workpiece surface or a ribbon beam that has a width slightly larger than the diameter of the workpiece. In the case of the ribbon beam, the beam is often stationary and the workpiece is moved through the beam to effect ion bombardment of the entire workpiece surface.
In order to achieve uniform ion implantation across the surface of the workpiece with a ribbon beam, it is desirable to accurately control the current density of the ribbon beam. Two dimensional current measurement of the ribbon beam is necessary to determine whether the current density is constant throughout the ribbon beam. Presently, a traveling dosimetry cup is utilized in some ion implantation machines that feature a ribbon ion beam. The dosimetry cup is scanned linearly across the ribbon beam to measure current density as a function of location within the beam. While this technique has been used quite successfully in commercially available ion implantation machines, the relatively slow speed of the mechanical motion, which is a translation across the ribbon with acceleration and deceleration at the edges of the ribbon, may slow ion beam setup time.
SUMMARYAn ion beam dosimetry apparatus includes a conducting surface that produces a current in response to the impact of ions in the ion beam that corresponds to a dose of ions present in the ion beam. A pair of overlaid masks each having a slot formed therein is provided. The slots intersect to form a movable aperture disposed between an ion beam source and the conducting surface. The aperture moves when at least one of the masks is moved relative to the other.
In an exemplary embodiment, the conducting surface is an outer surface of a hollow rod made of a conductive material and the pair of overlaid masks are formed into a pair of concentric cylinders surrounding the hollow rod. The slots are configured such that relative motion between the masks causes the aperture to trace a scanning pattern across the beam such that all areas of the beam encounter the aperture during the scanning pattern. A suppression electrode may be positioned within the inner mask or one or more suppression magnets may be contained within the hollow rod to limit the escape of secondary electrons caused by beam impact.
The overlaid masks and conducting surface may be removably positioned between a workpiece mounting structure and the ion beam source or behind a workpiece support structure such that the overlaid masks and conducting surface are downstream of the workpiece support structure with respect to the path of the ion beam.
BRIEF DESCRIPTION OF THE DRAWINGS
Ion Implantation System Overview
The exemplary ion implanter 10 includes an ion source 12 for emitting ions generated from a source material. Typical source materials are either gases injected into a source housing 14 or solids that are vaporized to produce a plasma of ions within the source housing. As is well known in the prior art such a source 12 typically includes an extraction electrode for causing ions to exit the housing 14 along a beam path away from the source.
The implanter 10 depicted in
The ion implanter 10 also includes a beam scanning structure 30 which is positioned to intercept ions subsequent to the mass discriminating magnet 20 and scan ions from side to side in a controlled manner to form a ribbon like ion beam having a width. In one known design the scanning structure uses an electrostatic field that is created between two scan plates that are approximately 15 cm long and spaced apart by 5 cm. This separation expands outwardly to a separation of about 7.5 cm at an exit end of the two scanning electrodes. Alternate means of creating a ribbon beam are use of time varying magnetic fields and use of structure that defines the beam exiting the source prior to species discrimination.
Returning to the exemplary structure shown in
A workpiece 24 is moveably supported within an ion implantation chamber 50 by a workpiece support structure 52. The workpieces 24, which are typically wafers of semiconductor material, are inserted into the chamber 50 by means of a load lock 54. Outside the chamber 50 the wafers are manipulated by a robot 56 which extracts untreated wafers from a storage cassette 58 and returns treated wafers to a second cassette 60 or alternatively can return the treated wafers from the same cassette from which they were withdrawn.
As can be seen in
The workpiece support assembly 52 both supports and moves the workpiece 24 with respect to the ribbon ion beam 42 during implantation such that a desired implantation surface of the workpiece 24 is controllably implanted with ions. As mentioned previously, in addition to the scanning technique described above, those of skill in the art will recognize that the ribbon shape of the ribbon ion beam 42 within the implantation chamber 50 can be created in a number of alternate ways.
A more detailed description of a prior art ion implanter adapted for serial implantation of workpieces is disclosed in U.S. Pat. No. 4,975,586, issued to Ray et al. on Dec. 4, 1990 and U.S. Pat. No. 4,761,559, issued to Myron on Aug. 2, 1988. The '586 and '599 patents are assigned to the assignee of the present invention and are incorporated herein in their respective entireties by reference.
Ion Beam Profiling Apparatus
As will be described in more detail below, to accurately obtain a two dimensional current density profile of a ribbon shaped ion beam, a cylindrical shaped profiler is placed in the path of the ion beam. The profiler has a scanning aperture formed by two overlaid mask cylinders surrounding a concentric current collecting cylinder or rod that registers an induced current proportional to a quantity of ions passing through the aperture and impacting the surface of the current collecting cylinder. The scanning aperture is much smaller than the cross section of the beam, in one embodiment the aperture is approximately 6 mm by 6 mm and forms a diamond shape. With these dimensions, the aperture is about one quarter of the width and one fiftieth of the height of a typical ion beam that acts upon a 300 mm wafer workpiece.
In the described embodiment, each of the inner and outer masks has a single slot that completes a single revolution of the respective mask and the masks rotate in opposite directions as shown in
The angular position of the masks can be known at any time by reading encoder positions on the rotational drives of the cylinder and deconvolving the collected current waveform into a two dimensional profile of the ion beam as follows:
- Each slot can be described as a parametric curve in cylindrical coordinates:
where it is assumed that the cylinders to be thin and of equal radii ρ. If each cylinder is rotating with its individual angular velocity ω1 and ω2, respectively, the slots can be described by parametric curves:
The beam passes through the intersection point of the two slots, that is, through a point:
Pi∈H1∩H2
or, analytically, Pi=(ρi, φi, zi) satisfies H1(Pi; t)=H2(Pi; t). So:
k1zi+ω1t=k2zi+ω2t
wherefrom:
The intersection point Pi is thus described by:
which corresponds to a helical path. The pitches of the two helical slots k1 and k2 should not be equal for a smooth trajectory, that is, k1 k2. In described embodiment, the pitches run in opposite azimuthal directions (clockwise and counter-clockwise around the z-axis), that is, k1 and k2 are of opposite signs and the denominators in the pitches of the intersection points are never zero. If the pitch of each slot is equal and of opposite direction so that k1=k2=k, the intersection point becomes:
In the described embodiment, the slots do not revolve more than one turn around each cylinder to avoid multiple intersection points along the length of each cylinder. Given exactly on turn on a cylinder of length l, then k=2π/l, and:
The expression can be rewritten with a normalized axial coordinate:
In the described embodiment, the pitch of the intersection point helix is small to achieve good spatial resolution of the two dimensional profile, that is, that the expression
Since
the solution is to have ω1 ω2 but not ω1=ω2 (since synchronous motion would not give a traveling intersection point).
Mapping of the intersection point to a cross-section of an incident ribbon ion beam is a simple mapping of cylindrical coordinates to Cartesian. One condition is that the intersection point is on the right side of the current collecting cylinder, for example, φi∈[0,] . Thereby the expressions for an x-y profile is obtained:
x=ρ. cos(φi)
y=Zi
In other embodiments any number of slots can be featured on the masks and both slots could proceed in the same azimuthal orientation around the cylinder in a manner that advantageously ensures that the beam may not pass simultaneously through two apertures. For example, one or both of the masks could have two slots separated azimuthally by 180 degrees.
It is known that secondary electrons generated by the beam ions impacting the collecting rod may tend to move away from the collecting cylinder's surface and cause inaccuracies in the current measured by the profiler.
Because the profiler features masks that rotate at constant velocities, no acceleration or deceleration of the masks is required during profiling, increasing the speed with which profiling can be accomplished, possibly in less than one second.
As can be seen from the above description, the described profiler permits rapid collection of two dimensional ion beam current density profile data that can be used advantageously for beam tuning, dosimetry, and glitch detection. Although the present invention has been described with a degree of particularity, it is the intent that the invention include all modifications and alterations from the disclosed design falling within the spirit or scope of the appended claims.
Claims
1. An ion beam dosimetry apparatus comprising:
- a conducting surface that produces a current in response to the impact of ions in the ion beam and that corresponds to a dose of ions present in the ion beam;
- a pair of overlaid concentric cylindrical masks each having at least one helical slot formed therein, wherein the slots intersect to form a movable aperture disposed between an ion beam source and the conducting surface that moves when at least one of the masks is moved relative to the other.
2. The apparatus of claim 1 wherein the conducting surface is an outer surface of a hollow rod made of a conductive material.
3. The apparatus of claim 1 wherein the aperture is smaller than a width and height of the ion beam.
4. The apparatus of claim 1 wherein the slots are configured such that relative motion between the masks causes the aperture to trace a scanning pattern across the beam such that all areas of the beam are encountered by the aperture during the scanning pattern.
5. The apparatus of claim 1 wherein the overlaid masks and conducting surface are removably positioned between a workpiece mounting structure and the ion beam source.
6. The apparatus of claim 1 wherein the overlaid masks and conducting surface are positioned behind a workpiece support structure such that the overlaid masks and conducting surface are downstream of the workpiece support structure with respect to the path of the ion beam.
7. The apparatus of claim 1 comprising a cylindrical suppression element disposed between the inner cylindrical mask and the conducting surface.
8. The apparatus of claim 2 comprising at least one cylindrical cusp suppression magnet disposed within the hollow rod wherein the at least one cusp magnet is aligned axially with the hollow rod.
9. A method for creating an ion dosage profile of an ion beam directed along a path from an ion source to a workpiece support structure comprising:
- positioning a current collecting surface in the ion beam path;
- creating an ion beam aperture in the ion beam path by moving relative to one another two overlapping concentric cylindrical masks each having a helical slot such that an aperture is created by the intersection of the overlapping slots, wherein the aperture scans the ion beam prior to the ion beam impacting the current collecting surface; and
- measuring a current induced in the current collecting surface by ions impacting the surface through the aperture to determine a beam profile to calculate an ion dosage profile.
10. The method of claim 9 wherein the ion dosage profile is calculated by translating a time-dependence of the measured current to a spatial distribution of beam current density.
11. The method of claim 9 wherein the current collecting surface is positioned upstream of the workpiece support structure with respect to the ion beam path.
12. The method of claim 9 wherein the current collecting surface is positioned downstream of the workpiece support structure with respect to the ion beam path.
13. The method of claim 12 wherein the cylinders are rotated in opposite directions.
14. The method of claim 13 wherein the speed of rotation of one of the cylinders is much higher than the speed of rotation of the other cylinder.
15. The method of claim 9 comprising positioning an electron suppressor between said collecting surface and said aperture.
16. The method of claim 9 comprising positioning an electron suppressor behind said collecting surface with respect to said aperture.
Type: Application
Filed: Dec 15, 2004
Publication Date: Jun 15, 2006
Applicant:
Inventors: Bo Vanderberg (Gloucester, MA), Michael Cristoforo (Beverly, MA), Kevin Wenzel (Belmont, MA)
Application Number: 11/012,585
International Classification: H01J 37/244 (20060101);