CoPtP thin film having very high perpendicular magnetic anisotropy and method for manufacturing the same
The present invention relates to a CoPtP thin film having very high perpendicular magnetic anisotropy and a method for manufacturing the same. The method for manufacturing a CoPtP alloy thin film according to the present invention includes the steps of preparing an electroplating solution including CoSO4·7 H2O at 0.05˜0.2 M, H2PtCl6 at 0.005˜0.02 M, and NaH2PO2 at 0.01˜0.4 M, and dipping a basic material into the electroplating solution and forming the CoPtP alloy thin film on the basic material by electroplating at a low temperature.
This application claims priority to Korean Patent Application No. 10-2005-0069384, filed on Jul. 29, 2005, and all the benefits accruing therefrom under 35 U.S.C. § 119, and the contents of which in its entirety are herein incorporated by reference.
BACKGROUND OF THE INVENTION(a) Field of the Invention
The present invention relates to a CoPtP thin film and a method for manufacturing the same, and more particularly to a CoPtP thin film having very high perpendicular magnetic anisotropy and a method for manufacturing the same.
(b) Description of the Related Art
A CoPtP alloy shows high coercivity and squareness in a perpendicular direction. Due to such properties, the CoPtP alloy is very suitable for an ultra high density perpendicular magnetic recording media which is used in the next generation hard disk drive. Ferromagnetic alloys such as the CoPtP alloy are largely demanded in a field of micro electro mechanical systems (MEMS). In particular, it is indispensable to manufacture ferromagnetic alloys such as the CoPtP when micro-scale elements or nano-scale elements such as a micro actuator or a magnetic valve etc. are realized. Therefore, various kinds of research regarding magnetic properties of the CoPtP alloy and controlling methods of a microstructure thereof have been developed.
The general CoPtP alloy has a face centered cubic (fcc) structure or an ordered face centered tetragonal (ordered fct) L10 structure. In particular, CoPtP alloy with the L10 structure has a property that magnetocrystalline anisotropy largely acts in a perpendicular direction. In this structure, Co atoms and Pt atoms are alternately packed in a (002) plane, which is perpendicular to a c-axis, of a tetragonal structure.
The ferromagnetic CoPtP alloy can be manufactured by a vacuum deposition method, an electroplating method, and so on. If the vacuum deposition method is used, the ferromagnetic CoPtP alloy is manufactured through phase transformation by heat treatment. Thereby, a phenomenon that a circuit is broken and so on by heat occurs. Therefore, the vacuum deposition method is not suitable for use for MEMS elements, micro elements, or nano elements.
On the contrary, the electroplating method has an advantage that a ferromagnetic CoPtP alloy can be directly manufactured without heat treatment. Since the electroplating method is carried out at a low temperature of 30˜55° C., it has been newly spotlighted as a method for realizing a magnetic recording media and MEMS elements.
If the CoPtP alloy thin film is manufactured by using the electroplating method, each component in the alloy is difficult to control due to an electrochemical potential difference between cobalt ions (Co2+) and platinum ions (Pt2+). To solve such a problem, the platinum ions have usually been produced by using a very complicated complex compound.
For example, a CoPtP alloy was manufactured with H2PtCl6, Na2Co(P2O7)2, Na3PO4, and NaH2PO2 reagents by the electroplating method by a research group including Professor K. Nobe of UCLA in the U.S.A. The amount of Pt was over 40.0 wt% and the coercivity was really 2960 Oe, and the squareness was in the range of about 0.3 to 0.4. These values are very low.
Meanwhile, a CoPtP alloy was manufactured with a Pt amino-nitrite complex and Co amino-citrate by a research group including Professor Cavallotti of Italy. The coercivity of the CoPtP alloy, which was in the range of about 3750 Oe to 4300 Oe, was larger than that developed by the research group including Professor K. Nobe.
However, there is a problem in that the above-mentioned methods are carried out at a temperature of over 60° C., and complicated complex compounds are used in manufacturing an electroplating solution. Therefore, it is difficult to obtain a thin film having stable quality and that can be actually adapted.
SUMMARY OF THE INVENTIONThe present invention is contrived to solve the above problems, and to provide a method for manufacturing a CoPtP alloy thin film using a commercialized reagent without a complicated complex compound by an electroplating method.
In addition, the present invention is contrived to provide a CoPtP alloy thin film having good coercivity and squareness in a perpendicular direction by using a method for manufacturing the above-mentioned CoPtP alloy thin film.
The method for manufacturing a CoPtP alloy thin film according to the present invention includes steps of preparing an electroplating solution including CoSO4·7H2O at 0.05˜0.2 M, H2PtCl6 at 0.005˜0.02 M, and NaH2PO2 at 0.01˜0.4 M, dipping a basic material into the electroplating solution, and forming the CoPtP alloy thin film on the basic material by electroplating at a low temperature.
It is preferable that the electroplating solution further includes an ammonium salt at 0.1˜0.5 M, and that it further includes Na4P2O7 at 0.3˜0.7 M. The basic material is preferably made of cobalt.
The electroplating is preferably carried out at a temperature of 30˜55° C. in the step of forming the CoPtP alloy thin film.
A CoPtP alloy thin film is manufactured by using the method for manufacturing a CoPtP alloy thin film according to the present invention.
The CoPtP alloy thin film preferably includes a plurality of CoPt grains and boundary layers surrounding the CoPt grains. The boundary layers preferably include Pt and P. Each of the CoPt grain is preferably separated from each other by the boundary layers.
The CoPtP alloy thin film preferably has coercivity of 4000 Oe ˜7000 Oe, and it preferably has squareness of not less than 0.7.
BRIEF DESCRIPTION OF THE DRAWINGSThe above and other features and advantages of the present invention will become more apparent by describing exemplary embodiments thereof in detail with reference to the attached drawings, in which:
Now, exemplary embodiments of the present invention will be described with reference to the attached drawings in order for those skilled in the art to work out the present invention. However, the present invention can be embodied in various modifications and thus is not limited to the embodiments described below.
An electroplating solution is prepared in order to manufacture a CoPtP alloy thin film according to the present invention. The electroplating solution includes CoSO4·7H2O, H2PtCl6, and NaH2PO2.
CoSO4·7H2O at 0.05˜0.2 M is used for providing cobalt with the electroplating solution. If the amount of CoSO4·7H2O is less than 0.05 M, a concentration of cobalt, which is an important element for showing magnetic properties of an alloy, is decreased, and thereby coercivity of the alloy is reduced. If the amount of CoSO4·7H2O is more than 0.2 M, the concentration of cobalt is increased and thereby perpendicular magnetic anisotropy of the alloy is deteriorated. Therefore, the magnetic properties in a perpendicular direction are reduced.
In addition, H2PtCl6 at 0.005˜0.02 M is used in order to provide Pt with the electroplating solution. If the amount of H2PtCl6 is less than 0.005 M, the grain boundary is uniformly formed and thereby coercivity and squareness in a perpendicular direction are reduced. If the amount of H2PtCl6 is more than 0.02 M, cobalt existing in the grain is alloyed with Pt and thereby magnetic properties are is reduced.
Furthermore, NaH2PO2 at 0.01˜0.4 M is used in order to induce co-deposition of P. If the amount of NaH2PO2 is less than 0.01 M, the concentration of P cannot be sufficient for the precipitates of P in a grain boundary to act as a pinning mechanism. If the amount of NaH2PO2 is more than 0.4 M, it cannot influence the amount of P which is induced to be co-deposited to the alloy, but also precipitates are generated in a solution, and thereby it is difficult to manufacture a solution.
Since CoSO4·7H2O, H2PtCl6, and NaH2PO2 are not only inexpensive but are also easy to obtain, the electroplating solution can be easily manufactured.
In addition, other compounds can be further added to the electroplating solution if necessary. For example, an ammonium salt can be further added. NH4Cl, NH4OSO2NH2, NH4OH, or NH4NO3 can be used as the ammonium salt. The ammonium salt is activated as ammonium ions (NH4+) in the electroplating solution. The ammonium ions are combined with cobalt ions and platinum ions, and thereby forming complex ions. Therefore, the ammonium ions change the electric potential in which cobalt ions and platinum ions are plated in the electroplating solution. The combining amount and composition of the alloy are varied according to the amount of ammonium ions. For this, an ammonium salt at 0.1˜0.5 M is further added. If the amount of ammonium salt is less than 0.1 M, the amount of ammonium ions is small, and thereby it is not easy to form complex ions during electroplating. Therefore, electroplating of the alloy becomes more difficult. If the amount of ammonium salt is more than 0.5 M, the formation of the complex ions reaches a saturation level, so more ammonium ions are not necessary.
In addition, NaH2PO2 can be further added to the electroplating solution. NaH2PO2 is added to the electroplating solution in order to control pH of the electroplating solution and to act as a supporting electrolyte. For this, NaH2PO2 at 0.3˜0.7 M is added. If the amount of NaH2PO2 is less than 0.3 M, it is not sufficient to manufacture an alkali solution and pH supporting of the solution becomes unstable. If the amount of NaH2PO2 is more than 0.7 M, an unnecessary amount thereof is added to the electroplating solution and thereby the temperature should be raised during manufacturing of the electroplating solution and electroplating.
A basic material is dipped in the electroplating solution which is manufactured by the above-mentioned method. For example, the basic material can be cobalt, and other basic materials can also be used. The basic material is electroplated at a low temperature of 30˜55° C. If a water solution including CoSO4·7H2O, H2PtCl6, and NaH2PO2 is used, it is possible to electroplate at a low temperature. The electroplating is carried out as static current electroplating.
If the electroplating temperature is less than 30° C., the electroplating solution is precipitated. In addition, if the electroplating temperature is over 50° C., it is impossible to maintain an accurate concentration of the electroplating solution due to evaporation thereof. Since the basic material acts as an anode, a CoPtP alloy thin film is formed on the basic material.
By using the above-mentioned method, a CoPtP alloy thin film with coercivity of 4000 Oe˜7000 Oe and squareness of not less than 0.7 in a perpendicular direction can be manufactured. The CoPtP alloy thin film manufactured by using the above-mentioned method has good perpendicular magnetic anisotropy.
The squareness is a ratio of residual magnetization amount to maximum magnetization amount. The squareness is used as a parameter for representing a shape of a magnetic hysteresis curve. Generally, the energy product (BH) of the material becomes larger as the squareness thereof increases even if the material has the same coercivity and magnetic flux density. That is, a material with a high squareness can be a hard ferrite material having high capacity. Therefore, squareness is a very important parameter that determines whether the material can be used as a recording medium.
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The experimental examples of the present invention will be explained below. The experimental examples of the present invention are merely to illustrate the present invention, and the present invention is not limited thereto.
EXPERIMENTAL EXAMPLE 1An electroplating solution including CoSO4·7H2O at 0.13 M, H2PtCl6 at 0.005 M, NaH2PO2 at 0.05 M, an ammonium salt at 0.15 M, and Na4P2O7 at 0.45 M was prepared. The pH of the electroplating solution was 8.4 and the temperature thereof was maintained at 40° C. As an anode, a cobalt plate was dipped in the electroplating solution and a current density was maintained at 10 mA/cm2. Therefore, a CoPtP alloy thin film was formed by using an electroplating method.
An electroplating solution including CoSO4·7H2O at 0.13 M, H2PtCl6 at 0.01 M, NaH2PO2 at 0.02 M, an ammonium salt at 0.25 M, and Na4P2O7 at 0.5 M was prepared. The pH of the electroplating solution was 8.4 and the temperature thereof was maintained at 30° C. As an anode, a cobalt plate was dipped in the electroplating solution and a current density was maintained at 5 mA/cm2. Therefore, a CoPtP alloy thin film was formed by using an electroplating solution.
An electroplating solution including CoSO4·7H2O at 0.10 M, H2PtCl6 at 0.015 M, NaH2PO2 at 0.02 M, an ammonium salt at 0.27 M, and Na4P2O7 at 0.5 M was prepared. The pH of the electroplating solution was 8.4 and the temperature thereof was maintained at 40° C. As an anode, a cobalt plate was dipped in the electroplating solution and a current density was maintained at 5 mA/cm2. Therefore, a CoPtP alloy thin film was formed by using an electroplating method.
An electroplating solution including CoSO4·7H2O at 0.08 M, H2PtCl6 at 0.01 M, NaH2PO2 at 0.05 M, an ammonium salt at 0.2 M, and Na4P2O7 at 0.45 M was prepared. The pH of the electroplating solution was 8.4 and the temperature thereof was maintained at 40° C. As an anode, a cobalt plate was dipped in the electroplating solution and a current density was maintained at 7 mA/cm2. Therefore, a CoPtP alloy thin film was formed by using an electroplating method.
According to the present invention, a hard ferrite CoPtP alloy thin film can be manufactured at a low temperature by electroplating using commercialized reagents without complicated complex compounds. The perpendicular magnetic anisotropy of the CoPtP alloy thin film manufactured by using the above method is much better than that of the alloy of a prior art. In particular, it is suitable as a magnetic material for a perpendicular magnetization recording medium considering a micro structure and a magnetic property thereof.
The method for manufacturing a CoPtP alloy thin film according to the present invention does not need a following process after electroplating. In particular, a process thereof is simple and stability of performance is improved.
Although the exemplary embodiments of the present invention have been described, it can be easily understood by those skilled in the art that the present invention may be modified in various forms without departing from the spirit and scope of the appended claims. Moreover, the use of the terms first, second, etc., do not denote any order or importance, but rather the terms first, second, etc., are used to distinguish one element from another. Furthermore, the use of the terms a, an, etc., do not denote a limitation of quantity, but rather denote the presence of at least one of the referenced item.
Claims
1. A method for manufacturing a CoPtP alloy thin film comprising the steps of:
- preparing an electroplating solution comprising CoSO4·7H2O at 0.05˜0.2 M, H2PtCl6 at 0.005˜0.02 M, and NaH2PO2 at 0.01˜0.4 M;
- dipping a basic material into the electroplating solution; and
- forming the CoPtP alloy thin film on the basic material by electroplating at a low temperature.
2. The method for manufacturing a CoPtP alloy thin film of claim 1, wherein the electroplating solution further comprises an ammonium salt at 0.1˜0.5 M in the step of preparing an electroplating solution.
3. The method for manufacturing a CoPtP alloy thin film of claim 1, wherein the electroplating solution further comprises Na4P2O7 at 0.3˜0.7 M in the step of preparing an electroplating solution.
4. The method for manufacturing a CoPtP alloy thin film of claim 1, wherein the basic material is made of cobalt in the step of preparing an electroplating solution.
5. The method for manufacturing a CoPtP alloy thin film of claim 1, wherein the electroplating is carried out at a temperature of 30˜55° C. in the step of forming the CoPtP alloy thin film.
6. A CoPtP alloy thin film manufactured by using the method for manufacturing a CoPtP alloy thin film of claim 1.
7. The CoPtP alloy thin film of claim 6, comprising:
- a plurality of CoPt grains; and
- boundary layers surrounding the CoPt grains, and wherein
- the boundary layers comprise Pt and P.
8. The CoPtP alloy thin film of claim 7, wherein each of the CoPt grains are separated from each other by the boundary layers.
9. The CoPtP alloy thin film of claim 6, with a coercivity of 4000 Oe˜7000 Oe.
10. The CoPtP alloy thin film of claim 6, with a squareness of not less than 0.7.
Type: Application
Filed: Dec 29, 2005
Publication Date: Feb 1, 2007
Inventors: Won-Young Jeung (Seoul), Kwan-Hyi Lee (Baltimore, MD), Ho-Dong Park (Incheon)
Application Number: 11/323,582
International Classification: C25D 3/56 (20060101);